By DEB 3469474 0027905 1 Tr ; ee 1RF340-343/1RF740-743 T-3 7-13 | fmanweeiiS MTM8N35/8N40 - A Schlumberger Company N-Channel Power MOSFETs, 10 A, 350 V/400 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed 8 applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. Vgs Rated at +20 V ? 8 Silicon Gate for Fast Switching Speeds 15000208 15000106 ipss, Vns(on) SOA and Vasithy) Specified at Elevated IRF340 IRF740 | Temperature t Rugged IRF341 IRF741 IRF342 IRF742 IRF343 IRF743 MTM8N35 MTM8N40 Maximum Ratings Rating Rating IRF340/342 IRF34 1/343 IRF740/742 IRF741/743 Symbol Characteristic MTM8N40 MTMS8N35 Unit Voss Drain to Source Voltage 400 350 Vv Voer Drain to Gate Voltage 400 350 Vv Res = 1.0 M2 Ves Gate to Source Voltage 20 +20 Vv i Ty, Tstg | Operating Junction Temperature -55 to +150 -55 to +150 C Storage Temperature Th Maximum Lead Temperature 275 275 C for Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics 1RF340/341 IRF342/343 MTM8N35 IRF740/741 IRF742/743 MTM8N40 Roston) | Static Drain-to-Source 0.55 0.80 0.55 Q On Resistance lp Drain Current A Continuous 10 8 8 Pulsed 40 32 48 Maximum Thermal Characteristics Rac Thermal Resistance, 1.0 1.0 0.83 C/W Junction to Case Pp Total Power Dissipation 125 125 150 Ww at To = 25C Notes For information concerning connection diagram and package oulline, refer to Section 7. 2-118 FAIRCHILD SE MICONDUCTOR ay DEPp a4nae74 Oo2790b 3 i IRF340-343/IRF740-743 T-39-13 Electrical Characteristics (Tc = 25C unless otherwise noted) Characteristic | Symbol! Min Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain-Source Breakdown Voltage! Vv Vas =0 V, ip = 250 pA IRF340/342/740/742 400 IRF341/343/741/743 350 | : loss Zero Gate Voltage Drain Current 250 uA Vos = Rated Voss, Vas =0 V 1000 uA Vps = 0.8 x Rated Vpss, Vag =0 V, To = 125C less Gate-Body Leakage Current nA Ves =+20 V, Vos=0 V IRF340-343 +100 IRF 740-743 +500 On Characteristics Vasith Gate Threshold Voltage 2.0 4.0 Vv Ip = 250 vA, Vos = Ves Rpsion) | Static Drain-Source On-Resistance? 2 Vas=10 V, Ip=5.0A IRF340/341/740/741 0.55 IRF342/343/742/743 0.80 Gis Forward Transconductance 4.0 S (8) Vos =10 V, Ip=5.0 A Dynamic Characteristics Ciss Input Capacitance 1600 pF Vos = 25 V, Vag =0 V Coss Output Capacitance 450 pF f= 1.0 MHz Crsg Reverse Transfer Capacitance 150 pF Switching Characteristics (Tc = 25C, Figures 9, 10) taon) Turn-On Delay Time 85 ns Vop = 175 V, Ip=5.0 A . , Vas=10 V, Reen = 4.7 Q t Rise Time 16 ns Res =4.7 2 torn Turn-Off Delay Time 90 ns ty Fall Time 35 ns Qg Total Gate Charge 60 nc Vas = 10 V, Ip=12 A Vpp = 400 V Symbol Characteristic | typ Max Unit Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage IRF340/341/740/741 2.0 v Is =10 A; Vag=0 V IRF342/343/742/743 1.9 Vv Ig=8 A; Vag=0V tr Reverse Recovery Time 600 ns Ig = 10 A; dig/dt = 100 A/pS re emmn t 2-119 . FAIRCHILD SEMICONDUCTOR ay a | 34L9b74 MTM8N35/8N40 7-39-13 Electrical Characteristics (Tc = 25C unless otherwise noted) a Symbol Characteristic | Min | Max Unit Test Conditions Off Characteristics Visrypss | Drain-Source Breakdown Voltage! Vv Ves =0 V, Ip =5.0 mA MTM8N40 400 MTM8N35 350 lpss Zero Gate Voltage Drain Current 0.25 mA Vps = 0.85 x Rated Voss, Vas =O V 2.5 mA Vos = 0.85 x Rated Voss, Ves =0 V, To = 100C lass Gate-Body Leakage Current +500 nA Vas =+20 V, Vos =0 V On Characteristics Vesitn) Gate Threshold Voltage 2.0 4.5 Vv Ip = 1.0 mA, Vos = Vas 1.5 4.0 Vv Ip = 1.0 mA, Vos = Vas To = 100C Vosion) | Drain-Source On-Voltage 2.2 v Ves =10 Vi Ip=4.0A 5.3 Vv Veg = 10 Vi Ip =8.0 A 44 Vv Ves = 10 V, Ip=4.0 A To = 100C Rpgjony | Static Drain-Source On-Resistance? 0.55 Q Vag =10 V, Ip=4.0 A Gfs Forward Transconductance 3.0 S &) Vps = 10 V, Ip =4.0 A i Dynamic Characteristics : Ciss input Capacitance 4800 pF Vos = 25 V, Vag =0 V Cass Output Capacitance 350 pF f= 1.0 MHz Criss Reverse Transfer Capacitance 150 pF Switching Characteristics (To = 25C, Figures 9, 10)? tgon) Turn-On Delay Time 60 ns Vpp = 25 V, Ip =4.0 A t Rise Time 150 ns nos = 10 V, Ree = 80 tao Turn-Off Delay Time 200 ns t Fall Time 120 ns Qg Total Gate Charge 60 nG Veg =10 V, Ip=12 A Vop = 400 V Notes 4. Ty = +25C to +150C 2. Pulse test: Pulse width <80 ps, Duty cycle <1% 3. Switching time measurements performed on LEM TR-58 test equipment. 2-120 vt ee FAIRCHILD SEMICONDUCTOR ay pep ayeae74 ooz7908 7? IRF340-343/IRF740-743 MTM8N35/8N40 T-39-13 Typical Performance Curves Figure 1 Output Characteristics 14 Ty = 25C 2 10 lp DRAIN CURRENTA o v asv 40V 0 + 2 3 4 5 6 7 Vas GATE TO SOURCE VOLTAGEV POLOOF Figure 3 Transfer Characteristics 20 16 ip DRAIN CURRENTA 2 3 4 5 6 ? 8 9 Vasg GATE TO SQURCE VOLTAGEV PC106Z0F Figure 5 Capacitance vs Drain to Source Voltage 104 Vas =0V t=1.0 W=28C - g CCAPACITANCE-=pF 3 10! 1 2 5 10 20 50 100 Vos DRAIN TO SOURCE VOLTAGEV PCIOSE Figure 2 Static Drain to Source Resistance vs Drain Current = > 12 os 06 > ip Aps{on) STATIC DRAIN TO SOURCE RESISTANCE 1 4 a 12 18 2 Ipn DRAIN CURRENTA PCIOSIOF Figure 4 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE -50 o 50 100 150 T,JUNCTION TEMPERATUREC Poses iF Figure 6 Gate to Source Voltage vs Total Gate Charge Vpn = v W=16A Ws 2se VasGATE TO SOURCE VOLTAGEV 0 10 2 a 50 Qg TOTAL GATE CHARGEnc PCIOB4OF 2-121 . FAIRCHILD SEMICONDUCTOR FNC nate mtn 84 Dey 3469674 0027909 49 i IRF340-343/IRF740-743 MTM8N35/8N40 T-39-13 Typical Performance Curves (Cont.) Figure 7 Forward Biased Safe Operating Area Jo DRAINCURAENTA 5 Ten Txmax) = 150C Single Pulse 1 10 20 50 100) 200 500 (1000 Yos DRAIN TO SOURCE VOLTAGE~V PCIOESOF Typical Electrical Characteristics Figure 9 Switching Test Circuit Vid Voo AL PULSE GENERATOR Vout | | > < g Res < | | | | | I | CROLISOF Figure 8 Transient Thermal Resistance vs Time RESISTANCE C/W lb ee | ~ ta Duty Factor,D = D curves apply to train ofheating pulsas =To+Pye ZthJ-CTRANSIENT THERMAL tTIMEms PGIO100F Figure 10 Switching Waveforms OUTPUT, Vour INVERTED (INPUT, Vin 10% PULSE WIDTH Wron6o0e 2-122