BSM 150 GB 170 DN2 IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 220 TC = 80 C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 440 TC = 80 C 300 Power dissipation per IGBT W Ptot TC = 25 C 1250 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.1 Diode thermal resistance, chip case RthJCD 0.32 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 http://store.iiic.cc/ sec 40 / 125 / 56 Oct-27-1997 BSM 150 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 10 mA 4.8 5.5 6.2 VGE = 15 V, IC = 150 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 150 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1700 V, VGE = 0 V, Tj = 25 C - 1 1.5 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 4 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 100 AC Characteristics Transconductance VCE = 20 V, IC = 150 A Input capacitance 54 nF - 20 - - 2 - - 0.55 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 http://store.iiic.cc/ Oct-27-1997 BSM 150 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Rise time - 520 1000 - 200 400 - 1200 1800 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Free-Wheel Diode Diode forward voltage V VF IF = 150 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 150 A, VGE = 0 V, Tj = 125 C - 2.1 - Reverse recovery time s trr IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/s, Tj = 125 C Reverse recovery charge - 0.6 C Qrr IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/s Tj = 25 C - 11 - Tj = 125 C - 36 - 3 http://store.iiic.cc/ Oct-27-1997 BSM 150 GB 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1300 t = 1.5s p W A 1100 Ptot IC 1000 10 s 10 2 900 100 s 800 700 10 1 1 ms 600 500 10 ms 400 10 0 300 DC 200 100 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 80 0.10 10 -3 60 0.05 single pulse 0.02 40 0.01 20 0 0 20 40 60 80 100 120 C 160 10 -4 -5 10 TC 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 http://store.iiic.cc/ Oct-27-1997 BSM 150 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 300 300 A A 260 IC 240 220 200 260 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 20 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 http://store.iiic.cc/ Oct-27-1997 BSM 150 GB 170 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 14 800 V 1200 V Ciss 10 1 12 10 Coss 8 10 0 6 Crss 4 2 0 0.0 0.4 0.8 1.2 1.6 C 10 -1 0 2.2 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 25 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 10 s, L < 25 nH 2.5 12 ICpulsIC ICsc/IC 1.5 di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 6 1.0 4 allowed numbers of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 1400 V 1800 VCE 6 http://store.iiic.cc/ 0 0 200 400 600 800 1000 1200 1400 V 1800 VCE Oct-27-1997 BSM 150 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 10 par.: VCE = 1200 V, VGE = 15 V, IC = 150 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr tr tf 10 2 10 1 0 50 100 150 200 250 tf 10 2 A IC 10 1 0 350 10 20 30 40 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 10 par.: VCE = 1200 V, VGE = 15 V, IC = 150 A 400 400 mWs mWs E E 300 300 Eon 250 250 200 200 150 150 Eoff 100 100 50 50 0 0 50 100 150 200 250 A IC Eon 350 7 http://store.iiic.cc/ 0 0 Eoff 10 20 30 40 60 RG Oct-27-1997 BSM 150 GB 170 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 300 A 260 IF Diode Tj=125C 240 K/W Tj=25C ZthJC 220 10 -1 200 180 160 10 -2 140 D = 0.50 120 0.20 0.10 100 0.05 10 -3 80 60 0.02 single pulse 0.01 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 http://store.iiic.cc/ Oct-27-1997 BSM 150 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 http://store.iiic.cc/ Oct-27-1997 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollstandigkeit der bereitgestellten Produktdaten fur diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur das Produkt und dessen Eigenschaften keinesfalls ubernommen. Sollten Sie von uns Produktinformationen benotigen, die uber den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem fur Sie zustandigen Vertriebsburo in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Fur Interessenten halten wir Application Notes bereit. 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