© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 11
1Publication Order Number:
MCR703A/D
MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
Features
•Small Size
•Passivated Die Surface for Reliability and Uniformity
•Low Level Triggering and Holding Characteristics
•Recommend Electrical Replacement for C106
•Surface Mount Package − Case 369C
•To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
Add ’1’ Suffix to Device Number, i.e., MCR706A1
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Max Unit
Peak Repetitive Off−State Voltage (Note 1)
(TC = −40 to +110°C, Sine Wave, 50 to 60 Hz,
RGK = 1 k) MCR703A
MCR706A
MCR708A
VDRM,
VRRM 100
400
600
V
Peak Non-Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, RGK = 1 k,
TC = −40 to +110°C) MCR703A
MCR706A
MCR708A
VRSM
150
450
650
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS) 4.0 A
Average On−State Current (180° Conduction
Angles) TC = −40 to +90°C
TC = +100°C
IT(AV) 2.6
1.6
A
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, TJ = 110°C)
(1/2 Sine Wave, 1.5 ms, TJ = 110°C)
ITSM 25
35
A
Circuit Fusing (t = 8.3 msec) I2t 2.6 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C)
PGM 0.5 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV) 0.1 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C)
IGM 0.2 A
Operating Junction Temperature Range TJ−40 to +110 °C
Storage Temperature Range Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
SCRs
4.0 AMPERES RMS
100 − 600 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Cathode
Gate
4 Anode
Preferred devices are recommended choices for future use
and best overall value.
DPAK
CASE 369C
STYLE 5
MARKING
DIAGRAMS
12
3
4YWW
CR
70xAG
DPAK−3
CASE 369D
STYLE 5
1
23
4
YWW
CR
70xAG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
Y = Year
WW = Work Week
70xA = Device Code
x = 3, 6 or 8
G=Pb−Free Package