© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 5
1Publication Order Number:
NTMFS4841NH/D
NTMFS4841NH
Power MOSFET
30 V, 59 A, Single N−Channel, SO−8FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•Low RG
•These are Pb−Free Devices
Applications
•Refer to Application Note AND8195/D
•CPU Power Delivery
•DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Sym-
bol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
ID13.5
9.7
A
Power Dissipation
RqJA (Note 1)
TA = 25°C
TA = 85°C
PD2.16
1.1
W
Continuous Drain
Current RqJA
v10 s
TA = 25°C
TA = 85°C
ID21.8
15.7
A
Power Dissipation
RqJA v10 s
TA = 25°C
TA = 85°C
PD5.7
2.9
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
TA = 85°C
ID8.6
6.2
A
Power Dissipation
RqJA (Note 2)
TA = 25°C
TA = 85°C
PD0.87
0.45
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
TC = 85°C
ID59
42.5
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
TC = 85°C
PD41.7
21.7
W
Pulsed Drain
Current
tp =
10 ms
TA = 25°C IDM 177 A
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) IS35 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V, IL = 25.6 A,
L = 0.3 mH, RG = 25 W)
EAS 98 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4841NH
AYWZZ
1
V(BR)DSS RDS(ON) MAX ID MAX
30 V 7.0 mW @ 10 V
59 A
11.6 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping†
ORDERING INFORMATION
NTMFS4841NHT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4841NHT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4841NH
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 3
°C/W
Junction−to−Ambient – Steady State (Note 1) RqJA 57.8
Junction−to−Ambient – Steady State (Note 2) RqJA 143.5
Junction−to−Ambient (tv10 s) RqJA 22.1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
28 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25 °C 1
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.1 2.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ5.6 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V to
11.5 V
ID = 30 A 4.8 7.0
mW
ID = 15 A 4.8
VGS = 4.5 V ID = 30 A 8.8 11.6
ID = 15 A 8.5
Forward Transconductance gFS VDS = 1.5 V, ID = 50 A 57 S
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 12 V
1565 2113
pF
Output Capacitance COSS 325 439
Reverse Transfer Capacitance CRSS 173 268
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
11.3 16.7
nC
Threshold Gate Charge QG(TH) 1.4 2.1
Gate−to−Source Charge QGS 5.3 7.9
Gate−to−Drain Charge QGD 4.5 6.8
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V,
ID = 30 A
24.4 33 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
12.1 18.1
ns
Rise Time tr23.3 34.9
Turn−Off Delay Time td(OFF) 14.1 21.1
Fall Time tf4.9 7.3
Turn−On Delay Time td(ON)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.2 10.7
ns
Rise Time tr20.6 30.9
Turn−Off Delay Time td(OFF) 21.9 32.9
Fall Time tf2.9 4.4
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4841NH
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 30 A
TJ = 25°C 0.86 1.2
V
TJ = 125°C 0.71
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
18.8
ns
Charge Time ta11.4
Discharge Time tb7.4
Reverse Recovery Charge QRR 6.7 nC
PACKAGE PARASITIC VALUES
Source Inductance LS
TA = 25°C
0.93 nH
Drain Inductance LD0.005
Gate Inductance LG1.84
Gate Resistance RG0.90 W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4841NH
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4
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
0123456
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V
3.6 V
3.4 V
TJ = 25°C
4.6 V
4.8 V
5.0 V
7.0 V
10 V
0
10
20
30
40
50
60
70
80
90
1234567
ID, DRAIN CURRENT (A)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
TC = 25°C
TC = −55°C
TC = 125°C
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 30 A
TJ = 25°C
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0.0105
0.011
0.0115
0.012
10 15 20 25 30 35 40 45 50 55
VGS = 11.5 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−55 −35 −15 5 25 45 65 85 145
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
ID = 30 A
VGS = 10 V
105105
0.1
1
10
100
1000
10000
5 1015202530
Figure 6. Drain−to−Source Leakage Current
versus Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
VGS = 0 V TJ = 150°C
TJ = 125°C
TJ = 25°C
NTMFS4841NH
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5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
15 10 5 0 5 10 15 20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
CISS
COSS
TJ = 25°C
CRSS
0
1.5
3
4.5
6
7.5
9
10.5
12
024681012141618202224
VDD = 15 V
VGS = 0 V − 11.5 V
ID = 30 A
TJ = 25°C
QT
Qg, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
QGD
QGS
1
10
100
1 10 100
tr
td(off)
td(on)
tf
VDS = 15 V
ID = 15 A
VGS = 11.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
0
5
10
15
20
25
30
0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Diode Forward Voltage versus
Current
IS, SOURCE CURRENT (A)
TJ = 25°C
VGS = 0 V
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS VDS
1
10
100
1000
0.1 1 10 100
100 ms
1 ms
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
ID = 25.6 A
NTMFS4841NH
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6
VDS = 1.5 V
DRAIN CURRENT (A)
gFS, (S)
Figure 13. GFS versus Drain Current
0
10
20
30
40
50
60
70
80
0 1020304050607080
NTMFS4841NH
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7
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.50 4.90
D2 3.50 −−−
E6.15 BSC
E1 5.50 5.80
E2 3.45 −−−
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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NTMFS4841NH/D
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