MCD95-18io8B Thyristor Module VRRM = 2x 1800 V I TAV = 116 A VT = 1.28 V Phase leg Part number MCD95-18io8B Backside: isolated 3 1 5 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCD95-18io8B Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1800 V I R/D reverse current, drain current VR/D = 1800 V TVJ = 25C 200 A VR/D = 1800 V TVJ = 125C 5 mA I T = 150 A TVJ = 25C 1.29 V 1.50 V 1.28 V VT forward voltage drop min. typ. I T = 300 A TVJ = 125 C I T = 150 A I T = 300 A I TAV average forward current TC = 85C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It value for fusing 1.70 V T VJ = 125 C 116 A 180 A TVJ = 125 C 0.85 V 455 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.25 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.43 kA t = 10 ms; (50 Hz), sine TVJ = 125 C 1.92 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.07 kA t = 10 ms; (50 Hz), sine TVJ = 45C 25.3 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 24.6 kAs TVJ = 125 C 18.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 17.7 kAs 119 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 2.4 0.22 TVJ = 125C; f = 50 Hz repetitive, IT = 250 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.45 A/s; I G = 0.45 A; VD = VDRM non-repet., IT = 116 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA TVJ = 125 C 0.2 V 10 mA TVJ = 25 C 450 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s 2.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 150 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 185 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCD95-18io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 200 Unit A -40 125 C -40 125 C Weight 90 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Ordering Standard Part Number MCD95-18io8B Equivalent Circuits for Simulation I V0 R0 * on die level 2.5 4 Nm Nm 9.7 mm terminal to backside 16.0 16.0 mm 3600 V 3000 V Delivery Mode Box Quantity 6 Code No. 454494 T VJ = 125 C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 1.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 13.0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCD95-18io8B 2.5 terminal to terminal t = 1 second isolation voltage g Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCD95-18io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCD95-18io8B Thyristor 105 2500 ITSM DC 180 sin 120 60 30 200 50 Hz 80% VRRM TVJ = 45C TVJ = 125C 2000 250 VR = 0 V 150 I2t 1500 I TAVM [A2s] [A] 100 TVJ = 45C [A] 1000 50 TVJ = 125C 500 0.001 104 0.01 0.1 1 0 1 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 2 3 4 5 6 7 8 910 0 25 50 Fig. 2 I2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 250 100 tp = 30 s tp = 500 s RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2 3 200 150 DC 180 sin 120 60 30 VG [V] 1 50 125C [W] 100 PGM = 120 W 60 W 8W 10 P = GAV 0 0.1 0.01 0 50 100 150 0 50 ITAVM, IFAVM [A] 100 IGD 0.1 Ta [C] 1 10 IG [A] Fig. 5 Gate trigger characteristics Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) 1000 100 TVJ = 25C RthKA K/W 800 Ptot IGT (TVJ = -40C) IGT (TVJ = 0C) IGT (TVJ = 25C) 25C Ptot 75 100 125 150 TC [C] t [ms] 0.03 0.06 0.08 0.12 0.15 0.3 0.5 600 [W] 400 10 tgd [s] Circuit B6 3x MCC95 or 200 limit 1 typ. 3x MCD95 0 0 100 200 300 0 IdAVM [A] 50 100 Ta [C] Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b MCD95-18io8B Rectifier 1200 Circuit W3 3x MCC95 or 3x MCD95 1000 RthKA K/W 0.03 0.06 0.08 0.12 0.15 0.3 0.5 800 Ptot 600 [W] 400 200 0 0 50 100 150 200 250 0 50 IRMS [A] 100 150 Ta [C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.30 RthJC for various conduction angles d: d RthJC [K/W] DC 0.22 180 0.23 120 0.25 60 0.27 30 0.28 0.25 0.20 ZthJC 30 60 120 180 DC 0.15 [K/W] Constants for ZthJC calculation: 0.10 i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 0.05 0.00 10 -3 10 -2 10 -1 10 0 10 1 ti [s] 0.0019 0.0477 0.3440 10 2 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.5 RthJC for various conduction angles d: d RthJC [K/W] DC 0.42 180 0.43 120 0.45 60 0.47 30 0.48 0.4 ZthJK 0.3 [K/W] 0.2 30 60 120 180 DC Constants for ZthJC calculation: i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000 0.1 0.0 10 -3 10 -2 10 -1 10 0 10 1 10 2 ti [s] 0.0019 0.0477 0.3440 1.3200 10 3 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130605b