MCD95-18io8B
Phase leg
Thyristor Module
3 1 25
Part number
MCD95-18io8B
Backside: isolated
TAV
T
VV1.28
RRM
116
1800
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCD95-18io8B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.29
R0.22 K/W
min.
116
VV
200T = 25°C
VJ
T = °C
VJ
mA5V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
455 WT = 25°C
C
150
1800
forward voltage drop
total power dissipation
Conditions Unit
1.50
T = 25°C
VJ
125
V
T0
V0.85T = °C
VJ
125
r
T
2.4 mΩ
V1.28T = °C
VJ
I = A
T
V
150
1.70
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1800T = 25°C
VJ
IA180
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
125
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
119
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
2.25
2.43
18.3
17.7
kA
kA
kA
kA
1.92
2.07
25.3
24.6
1800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
250 A
T
P
G
=0.45
di /dt A/µs;
G
=0.45
DDRM
cr
V = ⅔ V
D DRM
GK
1000
2.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
150 mA
T= °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = ⅔ V
D DRM
125
latching current T= °C
VJ
450 mAI
L
25tµs
p
=10
IA;
G
= 0.45 di /dt A/µs
G
=0.45
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.45 di /dt A/µs
G
=0.45
V = ½ V
D DRM
turn-off time T= °C
VJ
185 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
= 150 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 116 A
T
125
R
thCH
thermal resistance case to heatsink K/W
Rectifier
1900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/forward bl ocking volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCD95-18io8B
Ratings
Package
T
VJ
°C
M
D
Nm4
mounting torque 2.5
T
stg
°C125
storage temperature -40
Weight g90
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm4
terminal torque 2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 200 A
per terminal
125-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCD95-18io8B 454494Box 6MCD95-18io8BStandard
3000
3600
ISOL
threshold voltage V0.85
mΩ
V
0 max
R
0 max
slope resistance * 1.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCD95-18io8B
3 1 25
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCD95-18io8B
0 50 100
T
a
[°C]
T
C
[°C]
t[ms]
t[s]
0.001 0.01 0.1 1
500
1000
1500
2000
2500
23456789011
10
4
10
5
0 25 50 75 100 125 150
0
50
100
150
200
250
I
TSM
[A]
I
TAVM
[A]
0 50 100 150
0
50
100
150
200
250
P
tot
[W]
I
TAVM
,I
FAVM
[A]
0 50 100 1500 100 200 300
0
200
400
600
800
1000
I
2
t
[A
2
s]
T
VJ
=45°C
180° sin
120°
60°
30°
DC
T
VJ
=125°C
50 Hz
80% V
RRM
T
VJ
=45°C
T
VJ
=125°C
P
tot
[W]
I
dAVM
[A] T
a
[°C]
V
R
=0V
B6
Circuit
3x MCC95 or
3x MCD95
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.4
0.6
0.8
1
1.2
1.5
2
3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
=25°C
t
gd
[μs]
limit
typ.
125°C
25°C
t
p
=30µs
t
p
=500µs
P
GM
=120W
60 W
P
GAV
=8W
I
GT
(TVJ = -40°C)
I
GT
(TVJ =0°C
)
I
GT
(TVJ = 25°C)
I
GD
R
thKA
K/W
0.3
0.08
0.12
0.15
0.03
0.06
0.5
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MCD95-18io8B
0 50 100 150 200 250
0
200
400
600
800
1000
1200
t[s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.1
0.2
0.3
0.4
0.5
Z
thJC
[K/W]
I
RMS
[A]
P
tot
[W]
050100150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
Z
thJK
[K/W]
t[s]
Circuit
W3
3x MCC95 or
3x MCD95
0.15
0.12
0.08
RthKA K/W
0.3
0.03
0.06
0.5
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
DC
180°
120°
60°
30°
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.22
180° 0.23
120° 0.25
60° 0.27
30° 0.28
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.42
180° 0.43
120° 0.45
60° 0.47
30° 0.48
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
4 0.2000 1.3200
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130605bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
