1. Product profile
1.1 General description
PNP resistor-equipped transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Rev. 03 — 7 April 2005 Product data sheet
Table 1: Product overview
Type number Package NPN complement
Philips JEITA
PDTA113ZE SOT416 SC-75 PDTC113ZE
PDTA113ZK SOT346 SC-59 PDTC113ZK
PDTA113ZM SOT883 SC-101 PDTC113ZM
PDTA113ZS[1] SOT54 (TO-92) SC-43A PDTC113ZS
PDTA113ZT SOT23 - PDTC113ZT
PDTA113ZU SOT323 SC-70 PDTC113ZU
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
General purpose switching and
amplification Circuit drivers
Inverter and interface circuits
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current (DC) - - 100 mA
R1 bias resistor 1 (input) 0.7 1 1.3 k
R2/R1 bias resistor ratio 8 10 12
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 2 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54A
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54 variant
1 input (base)
2 output (collector)
3 GND (emitter)
SOT23, SOT323, SOT346, SOT416
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
001aab347
1
2
3
006aaa148
R1
R2
2
3
1
001aab348
1
2
3
006aaa148
R1
R2
2
3
1
001aab447
1
2
3
006aaa148
R1
R2
2
3
1
006aaa144
12
3
sym003
3
2
1R1
R2
3
1
2
Transparent
top view
sym003
3
2
1R1
R2
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 3 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
3. Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4: Ordering information
Type number Package
Name Description Version
PDTA113ZE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA113ZK SC-59 plastic surface mounted package; 3 leads SOT346
PDTA113ZM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm SOT883
PDTA113ZS[1] SC-43A plastic-single-ended leaded (through hole) package;
3 leads SOT54
PDTA113ZT - plastic surface mounted package; 3 leads SOT23
PDTA113ZU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5: Marking codes
Type number Marking code[1]
PDTA113ZE 15
PDTA113ZK 27
PDTA113ZM G3
PDTA113ZS TA113Z
PDTA113ZT *AM
PDTA113ZU *16
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 4 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
5. Limiting values
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
6. Thermal characteristics
[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5V
VIinput voltage
positive - +5 V
negative - 10 V
IOoutput current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb 25 °C
SOT416 [1] - 150 mW
SOT346 [1] - 250 mW
SOT883 [2] [3] - 250 mW
SOT54 [1] - 500 mW
SOT23 [1] - 250 mW
SOT323 [1] - 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT416 [1] - - 833 K/W
SOT346 [1] - - 500 K/W
SOT883 [2] [3] - - 500 K/W
SOT54 [1] - - 250 K/W
SOT23 [1] - - 500 K/W
SOT323 [1] - - 625 K/W
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 5 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
7. Characteristics
Table 8: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB = 50 V; IE = 0 A - - 100 nA
ICEO collector-emitter
cut-off current VCE = 30 V; IB = 0 A - - 1µA
VCE = 30 V; IB = 0 A;
Tj=150 °C--50 µA
IEBO emitter-base cut-off
current VEB = 5 V; IC = 0 A - - 800 µA
hFE DC current gain VCE = 5 V; IC = 5 mA 35 - -
VCEsat collector-emitter
saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE = 5 V; IC = 100 µA-0.65 0.3 V
VI(on) on-state input voltage VCE = 300 mV; IC = 20 mA 2.5 0.95 - V
R1 bias resistor 1 (input) 0.7 1 1.3 k
R2/R1 bias resistor ratio 8 10 12
Cccollector capacitance VCB = 10 V; IE = ie = 0 A;
f=1MHz --2pF
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 6 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 40 °C
Fig 1. DC current gain as a function of collector
current; typical values Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
VCE = 0.3 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = 5 V
(1) Tamb = 40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values Fig 4. Off-state input voltage as a function of collector
current; typical values
IC (mA)
101102
101
006aaa107
102
10
103
hFE
1
(1)
(2)
(3)
IC (mA)
1102
10
006aaa108
101
1
VCEsat
(V)
102
(1)
(3)
(2)
006aaa109
IC (mA)
101102
101
1
10
VI(on)
(V)
101
(1)
(2)
(3)
IC (mA)
101101
006aaa110
1
10
VI(off)
(V)
101
(1)
(3)
(2)
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 7 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
8. Package outline
Fig 5. Package outline SOT416 (SC-75)
UNIT A1
max bpcDEe1HELpQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
04-11-04
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 8 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 6. Package outline SOT346 (SC-59/TO-236)
UNIT A1bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface mounted package; 3 leads SOT346
04-11-04
04-11-11
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 9 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 7. Package outline SOT883 (SC-101)
UNIT A1
max.
A(1) bb
1e1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883
e
e1
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 10 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 8. Package outline SOT54 (SC-43A/TO-92)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 11 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 9. Package outline SOT54A
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7 3
2
e
5.08
e1L2
2.54
L1(1)
max.
3
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54A 97-05-13
04-06-28
AL
0 2.5 5 mm
scale
b
c
D
b1
L1
L2
d
E
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A
e1
e
1
2
3
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 12 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 10. Package outline SOT54 variant
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant
1
2
3
L2
e1e
e1
04-06-28
05-01-10
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 13 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 11. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
99-09-13
04-11-04
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 14 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
Fig 12. Package outline SOT323 (SC-70)
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
04-11-04
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 15 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
9. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 5000 10000
PDTA113ZE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
PDTA113ZK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135
PDTA113ZM SOT883 2 mm pitch, 8 mm tape and reel - - -315
PDTA113ZS SOT54 bulk, straight leads - -412 -
SOT54A tape and reel, wide pitch - - -116
SOT54A tape ammopack, wide patch - - -126
SOT54 variant bulk, delta pinning - -112 -
PDTA113ZT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTA113ZU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 16 of 18
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
10. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PDTA113Z_SER_3 20050407 Product data sheet - 9397 750 14485 PDTA113ZT_2
Modifications: The types PDTA113ZE, PDTA113ZK, PDTA113ZM, PDTA113ZS and PDTA113ZU were added
Table 1 Product overview added
Table 8 Characteristics: Vi(on) renamed to VI(on) on-state input voltage
Table 8 Characteristics: Vi(off) renamed to VI(off) off-state input voltage
Figure 1 DC current gain as a function of collector current added
Figure 2 Collector-emitter saturation voltage as a function of collector current added
Figure 3 On-state input voltage as a function of collector current
Figure 4 Off-state input voltage as a function of collector current
Table 9 Packing methods added
PDTA113ZT_2 20040518 Objective data sheet - 9397 750 13216 PDTA113ZT_1
PDTA113ZT_1 20040325 Objective data sheet - 9397 750 12547 -
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
9397 750 14485 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 7 April 2005 17 of 18
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 7 April 2005
Document number: 9397 750 14485
Published in The Netherlands
Philips Semiconductors PDTA113Z series
PNP resistor-equipped transistors; R1 = 1 k, R2 = 10 k
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . 15
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 17
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
14 Contact information . . . . . . . . . . . . . . . . . . . . 17