BZX384-B3V3,115 - NXP - Datasheet.Directory

DATA SH EET

Product data sheet

Supersedes data of 2003 Apr 01 2004 Mar 22

DISCRETE SEMICONDUCTORS

BZX384 series

Voltage regulator diodes

2004 Mar 22 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX384 series

FEATURES

•Total power dissipation: max. 300 mW

•Two tolerance series: ±2% and approx. ±5%

•Working voltage range: nominal 2.4 to 75 V (E24 range)

•Non-repet itive peak reverse power dis sipation:

max. 40 W.

APPLICATIONS

•General regulation functions.

DESCRIPTION

Low-power vo ltage regulator diodes enc apsulated in a

very small SOD323 (SC-7 6) plastic SMD pack age.

The diodes are availabl e in the normalized E24 ±2%

(BZX384-B) and appro x. ±5% (BZX384-C) tolerance

range. The series consists of 37 types with nominal

working voltages from 2.4 to 75 V.

PINNING

PIN DESCRIPTION

1cathode

2anode

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

handbook, halfpage

;

Top view

MAM387

The marking bar indicates the cathode.

2004 Mar 22 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

MARKING

ORDERING INFORMATION

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

Marking codes for BZX384-B2V4 to BZX384-B75

BZX384-B2V4 K1 BZX384-B6V2 L2 BZX384-B16 M3 BZX384-B43 N3

BZX384-B2V7 K2 BZX384-B6V8 L3 BZX384-B18 M4 BZX384-B47 N4

BZX384-B3V0 K3 BZX384-B7V5 L4 BZX384-B20 M5 BZX384-B51 N5

BZX384-B3V3 K4 BZX384-B8V2 L5 BZX384-B22 M6 BZX384-B56 N6

BZX384-B3V6 K5 BZX384-B9V1 L6 BZX384-B24 M7 BZX384-B62 N7

BZX384-B3V9 K6 BZX384-B10 L7 BZX384-B27 M8 BZX384-B68 N8

BZX384-B4V3 K7 BZX384-B11 L8 BZX384-B30 M9 BZX384-B75 N9

BZX384-B4V7 K8 BZX384-B12 L9 BZX384-B33 N0

BZX384-B5V1 K9 BZX384-B13 M1 BZX384-B36 N1

BZX384-B5V6 L1 BZX384-B15 M2 BZX384-B39 N2

Marking codes for BZX384-C2V4 to BZX384-C75

BZX384-C2V4 T3 BZX384-C6V2 T1 BZX384-C16 DE BZX384-C43 DR

BZX384-C2V7 T4 BZX384-C6V8 D7 BZX384-C18 DF BZX384-C47 DS

BZX384-C3V0 T5 BZX384-C7V5 D8 BZX384-C20 DG BZX384-C51 DT

BZX384-C3V3 T6 BZX384-C8V2 D9 BZX384-C22 DH BZX384-C56 DU

BZX384-C3V6 T7 BZX384-C9V1 D0 BZX384-C24 DJ BZX384-C62 DV

BZX384-C3V9 T8 BZX384-C10 T2 BZX384-C27 DK BZX384-C68 DW

BZX384-C4V3 T9 BZX384-C11 DA BZX384-C30 DL BZX384-C75 DX

BZX384-C4V7 T0 BZX384-C12 DB BZX384-C33 DM

BZX384-C5V1 D5 BZX384-C13 DC BZX384-C36 DN

BZX384-C5V6 D6 BZX384-C15 DD BZX384-C39 DP

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BZX384-B2V4

BZX384-B75

−plastic surface mounted package; 2 leads SOD323

BZX384-C2V4

BZX384-C75

2004 Mar 22 4

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SOD323 st an da rd mounting conditions.

CHARACTERISTICS

Total BZX384-B and C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak re verse current tp = 100 μs; square wave;

Tamb = 25 °C; prior to surge see Tables 1 and 2 A

PZSM non-repetitive peak reverse power

dissipation tp = 100 μs; square wave;

Tamb = 25 °C; prior to surge −40 W

Ptot total power dissipation Tamb = 25 °C; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.3 0.9 V

IF = 100 mA; see Fig.3 1.1 V

IRreverse current;

BZX384-B/C2V4 VR = 1 V 50 μA

BZX384-B/C2V7 VR = 1 V 20 μA

BZX384-B/C3V0 VR = 1 V 10 μA

BZX384-B/C3V3 VR = 1 V 5 μA

BZX384-B/C3V6 VR = 1 V 5 μA

BZX384-B/C3V9 VR = 1 V 3 μA

BZX384-B/C4V3 VR = 1 V 3 μA

BZX384-B/C4V7 VR = 2 V 3 μA

BZX384-B/C5V1 VR = 2 V 2 μA

BZX384-B/C5V6 VR = 2 V 1 μA

BZX384-B/C6V2 VR = 4 V 3 μA

BZX384-B/C6V8 VR = 4 V 2 μA

BZX384-B/C7V5 VR = 5 V 1 μA

BZX384-B/C8V2 VR = 5 V 700 nA

BZX384-B/C9V1 VR = 6 V 500 nA

BZX384-B/C10 VR = 7 V 200 nA

BZX384-B/C11 VR = 8 V 100 nA

BZX384-B/C12 VR = 8 V 100 nA

BZX384-B/C13 VR = 8 V 100 nA

BZX384-B/C15 to 75 VR = 0.7VZnom 50 nA

2004 Mar 22 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX384 series

Table 1 Per type BZX384-B/C2V4 to B/C24

Tj = 25 °C unless otherwise specified.

BZX-

Bxxx

Cxxx

WORKING VOLTAGE VZ (V)

at IZtest = 5 mA DIFFERENTIAL RESISTANCE

rdif (Ω)TEMPERATURE

COEFFICIENT SZ (mV/K)

at IZtest = 5 mA

(see Figs 4 and 5)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0450 6.0

2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0450 6.0

3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0450 6.0

3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0450 6.0

3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0450 6.0

3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0450 6.0

4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0450 6.0

4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.08 6.32 5.8 6.6 40 150 610 0.4 2.3 3.7 200 6.0

6V8 6.66 6.94 6.4 7.2 30 80 615 1.2 3.0 4.5 200 6.0

7V5 7.35 7.65 7.0 7.9 30 80 615 2.5 4.0 5.3 150 4.0

8V2 8.04 8.36 7.7 8.7 40 80 615 3.2 4.6 6.2 150 4.0

9V1 8.92 9.28 8.5 9.6 40 100 615 3.8 5.5 7.0 150 3.0

10 9.80 10.20 9.4 10.6 50 150 820 4.5 6.4 8.0 90 3.0

11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5

22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25

24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25

2004 Mar 22 6

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX384 series

Table 2 Per type BZX384-B/C27 to B/C75

Tj = 25 °C unless otherwise specified.

BZX-

Bxxx

Cxxx

WORKING VOLTAGE VZ (V)

at IZtest = 2 mA DIFFERENTIAL RESISTANCE

rdif (Ω)TEMPERATURE

COEFFICIENT SZ (mV/K)

at IZtest = 2 mA

(see Figs 4 and 5)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE

PEAK REVERSE

CURRENT IZSM (A)

at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0

30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0

33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9

36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8

39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7

43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6

47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5

51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4

56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3

62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

2004 Mar 22 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on an FR4 printed-circ uit board.

2. Soldering point of the cathode tab.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction

to ambient note 1 415 K/W

Rth(j-s) thermal resistance from junction

to soldering point note 2 110 K/W

2004 Mar 22 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

GRAPHICAL DATA

Fig.2 Maximum permissible non-repetitive peak

reverse powe r dissipation versus dur ation.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj = 25 °C (prior to surge).

(2) Tj = 150 °C (prior to surge).

Fig.3 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj = 25 °C.

Fig.4 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX384-B/C2V4 to B/C4V3.

Tj = 25 to 150 °C.

Fig.5 Temperature coefficient as a functi on of

working current; typical values.

handbook, halfpage

02016

−5

MBG782

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

BZX384-B/C4V7 to B/C12.

Tj = 25 to 150 °C.

2004 Mar 22 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Mar 22 10

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX384 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The prod uct status of devi ce(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

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Printed in The Netherlands R76/02/pp11 Date of release: 2004 Mar 22 Document orde r number: 9397 750 12616