SEMICONDUCTOR Saar TECHNICAL DATA 2N4856. 2N4857. 2N4858 P-Channel, Small-Signal Field Effect Transistors (JFETs) _. designed for general-purpose switching applications. CASE 22-03, STYLE 1 TO-208AA (TO-18) MAXIMUM RATINGS Rating Symbol Value Unit Gate-Source Voltage Ves 40 Vde Drain-Source Voltage Vos 40 Vde Drain-Gate Voltage VDG 40 Vde Gate Current IG 50 mAdc Device Dissipation Py @Ta = 25C 0.36 Watts Derate above 25C oe mwrc @ To = 25 as wats Derate above 25C bute Storage Temperature Range Tstg -65 to +200 6 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779ELECTRICAL CHARACTERISTICS continued (T, = 25C unless otherwise noted.) Characteristic Symbol | Min Max | Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage V(BR)}GSS 40 - Vde (Iq = -1.0 pAde, Vpg = 0) Gate Reverse Current lass (V@g = -20 Vde, Vos = 0 Vde) - 0.25 nade (Vag = -20 Vde, Vpg = 0. Ta = 150C) _ a) pAde Gate Source Cutoff Voltage Vasi(ath Vde (Vps = 15 Vee, Ip = 0.5 nAdc) 2N4a56 -4.0 ~10 2N4857 -2.0 6.0 2N4856 0.8 4.0 Drain Cutoff Current 'Diott) (Vag = -10 Vde. Vig = 15 Vide) aad 0.25 nAdc (Vgg = -10 Vde, Vpg = 15 Vde. Ta = 150C) a wAde ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(?) Ipss made (Vpg = 15 Vde, Vag = 0) 2N4856 50 175 2N4857 20 100 2N4B58 8.0 80 Orain-Source On-Voltage Vosion) Vdc (Ip = 20 mAde, Vag 0) 2N4856 = 0.75 (Ip = 10 mAde, Vg = 0) 2N4857 = 05 {Ip = 5.0 mAde, Vag = 0) 2N4858 = 05 SMALL-SIGNAL CHARACTERISTICS Drain-Source ON" Resistance) Tds(an) ohms (Ip = 100 pA ac rms, Ip = 0. 2N4856 - 25 Vgg = 0. f = 1.0 KHz) 2N4857 - 40 2N4858 _ 60 input Capacitance Ciss a 1B pF (Vgg = -10 Vdc, Vpg = 0, f= 1.0 MHz) Reverse Transfer Capacitance Crss - 8.0 pF (V@g = -10 Vee, Vg = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (See Figure 1) Turn-On Delay Time 2N4856 ta(on) a 6.0 ns 2N4857 = 6.0 2N4858 = 10 Rise Time 2N4856 tr a 3.0 ns 2N4857 _ 40 2N4858 = 10 Turn-Oft Time 2N4856 tavott a 25 ns 2N4857 = 50 2N4a58 _ 100 2805 Veterans Highway Ronkonkoma, N.Y. 11779 CRYSTALONCS Suite 14 ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 175C, Vqg = 80% of Rated, Vps = 0 Wnitial and End Point Limits Characteristics Tested Symbol Min Max Unit Drain-Source On-Resistance(") 'DS(on) ohms (Ip = 0, Vpg = 0, f = 1.0 kHz, 2N4856 _ 25 Ip = 100 Ade rms) 2N4857 _ 40 2N4858 ~ 60 Drain Cutoff Current iprett - 0.25 nAdc (aff) (Vgg = 10 Vde, Vpg = 15 Vde) Gate Reverse Current lass a 0.25 nAdc (Vgg = -20 Vdc, Vpg = 10 Vdc) Zero-Gate-Voltage Drain Current(*) loss mAdc (Vps = 15 Vdc, Vag = 0) 2N4856 50 175 2N4857 20 100 2N48658 8.0 80 Delta from Pre-Burn-In Measured Values Min Max Delta Drain-Source On-Resistance ADS(on) aa +20 % of tnitiai Value Detta Gate Reverse Current Aigss +100 % of Initial Value or +0.t ee whichever is greater Delta Drain Cutoff Current Alpyott} ae +100 % of Initial Value or 0.1 Wied whichever is greater Delta Zero-Gate-Voltage Drain Current Aloss a +15 % of Initial Value i1) Pulsed. Pulse Weith 100 my, Duty Cycle < 10%,