2SB892-T - ON Semiconductor L.L.C.

2SB892 / 2SD1207

No.930-1/5

Applications

•Power supplies, relay drivers, lamp drivers, and automotive wiring.

Features

•FBET and MBIT processed (Original process of SANYO).

•Low saturation voltage.

•Large current capacity and wide ASO.

Specifications ( ) : 2SB892

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO (--)60 V

Collector-to-Emitter Voltage VCEO (--)50 V

Emitter-to-Base Voltage VEBO (--)6 V

Collector Current IC(--)2 A

Collector Current (Pulse) ICP (--)4 A

Collector Dissipation PC1W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)0.1 μA

Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA

Continued on next page.

www.semiconductor-sanyo.com/network

Ordering number : EN930D

D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

SANYO Semiconductors

DATA SHEET

2SB892 / 2SD1207

PNP / NPN Epitaxial Planar Silicon Transistors

Large-Current Switching Applications

2SB892 / 2SD1207

No.930-2/5

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

DC Current Gain hFE1* VCE=(--)2V, IC=(--)100mA 100 560

hFE2V

CE=(--)2V, IC=(--)1.5A 40

Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 150 MHz

Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA

(--0.3)0.15 (--0.7)0.4

Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA

(--)0.9 (--)1.2

Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)50 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V

* : The 2SB892 / 2SD1207 are graded as follows by hFE at 100mA :

Rank R S T U

hFE 100 to 200 140 to 280 200 to 400 280 to 560

Package Dimensions

unit : mm (typ)

7520-002

123

0.5

0.5 0.5

0.6

1.45 1.45

6.0 4.7

5.0

3.0

1.0

8.5

14.0

1 : Emitter

2 : Collector

3 : Base

SANYO : MP

IC -- VCE IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

--2.4

--2.0

--1.6

--0.8

--1.2

--0.4

00 --2.4--1.6 --2.0--1.2--0.4 --0.8

2.4

2.0

1.6

0.8

1.2

0.4

002.41.6 2.01.20.4 0.8

--2mA

--4mA

--6mA

--8mA

--50mA

2mA

4mA

8mA

50mA

40mA

25mA

15mA

--20mA

--10mA

IB=0mA

ITR08646

IB=0mA

ITR08647

2SB892 2SD1207

2SB892 / 2SD1207

No.930-3/5

hFE -- IC

Collector Current, IC -- mA

DC Current Gain, hFE

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

hFE -- IC

Collector Current, IC -- mA

DC Current Gain, hFE

Collector Current, IC -- mA

fT -- IC

Gain-Bandwidth Product, fT -- MHz

Collector Current, IC -- mA

fT -- IC

Gain-Bandwidth Product, fT -- MHz

IC -- VCE IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

2SB892

VCE= --2V

ITR08652

100

1000

10 --100

7325 7325 325

--1000--10

2SD1207

VCE=2V

100

1000

10 100

7325 7325 325

100010 ITR08653

2SB892

VCB= --10V

100

1000

--100--10 2537 2 53237--1000

2SD1207

VCB=10V

10010 2537 2 532371000

ITR08654

100

1000

ITR08655

0 0.40.2 1.20.8 1.00.6

--2mA

--1mA

--3mA

--4mA

--5mA

--6mA

--7mA

--1200

--1000

--400

--800

--600

--200

00 --12--8 --10--6--2 --4

7mA

6mA

5mA

4mA

3mA

2mA

1mA

1200

1000

400

800

600

200

--1200

--1000

--400

--800

--600

--200

1200

1000

400

800

600

200

012810624

IB=0mA

ITR08648

2SB892 2SD1207

IB=0mA

ITR08649

2SD1207

VCE=2V

ITR08651

0 --0.4 --1.2--0.8 --1.0--0.2 --0.6

2SB892

VCE= --2V

ITR08650

2SB892 / 2SD1207

No.930-4/5

PC -- Ta

Ambient Temperature, Ta -- °C

Collector Dissipation, PC -- mW

A S O

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- A

VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

VCE(sat) -- IC

Collector Current, IC -- mA

Cob -- VCB

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Output Capacitance, Cob -- pF

Collector-to-Base Voltage, VCB -- V

0.1

1.0

0.01

1.0 537537 2 5372

10 100

ICP=4A

10ms

100ms

DC operation

1ms

IC=2A

ITR08661

1200

600

400

1000

800

200

2006040 80 100 140120 160

ITR08660

2SB892 / 2SD12072SB892 / 2SD1207

(For PNP minus sign is omitted.)

--100

723 5 723 235--1000--10 100

723 5 723 235100010

--100

--10

--1.0

--0.01

--0.1

ITR08658

2SB892

IC / IB=20

100

1.0

0.01

0.1

ITR08659

2SD1207

IC / IB=20

100

372

1.0 10

5372100

ITR08657

2SD1207

f=1MHz

100

372

--1.0 --10

5372--100

ITR08656

2SB892

f=1MHz

2SB892 / 2SD1207

No.930-5/5

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

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intellectual property rights which has resulted from the use of the technical information and products mentioned

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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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This catalog provides information as of December, 2008. Specifications and information herein are subject

to change without notice.