2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1838(L), 2SK1838(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 1 A 2 A 1 A 10 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 2 2SK1838(L), 2SK1838(S) Maximum Safe Operation Area Power vs. Temperature Derating 10 Drain Current I D (A) O pe ra = 1 10 n m s 0 s m tio 0.3 10 C s 10 PW D 1 Channel Dissipation 3 15 10 Pch (W) 20 s (T c = (1 sh ot ) 25 C ) 0.1 Operation in this area is limited by R DS (on) 5 0.03 Ta = 25C 0 50 100 Case Temperature 150 Tc (C) 0.01 1 200 10 3 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Transfer Characteristics Typical Output Characteristics 1.0 1.0 8V 6V 10 V 0.8 0.8 5V Pulse Test V DS = 10 V Drain Current I D (A) Drain Current ID (A) Pulse Test 0.6 4.5 V 0.4 4V 0.6 0.4 0.2 0.2 25C Tc = 75C V GS = 3.5 V 0 2 4 6 Drain to Source Voltage V DS (V) - 25C 8 10 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 3 2SK1838(L), 2SK1838(S) Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 Pulse Test 4 3 Static Drain-Source on State Resistance R DS (on) ( ) Drain to Source Saturation Voltage VDS (on) (V) 5 0.5 A 2 0.2 A 1 8 4 12 Pulse Test V GS = 10 V 10 5 2 1 ID = 0.1 A 0 20 20 16 0.5 0.02 0.05 Gate to Source Voltage VGS (V) 2 Pulse Test VDS = 10 V Pulse Test V GS = 10 V 15 I D = 0.5 A 10 0.1 A 5 0.2 A 0 40 80 120 Forward Transfer Admittance |y fs | (S) Static Drain-Source on State Resistance R DS (on) ( ) 1 5 Case Temperature Tc (C) 4 0.5 Forward Transfer Admittance vs. Drain Current 25 0 - 40 0.2 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperaure 20 0.1 2 1 Tc = - 25C 0.5 25C 75C 0.2 0.1 160 0.05 0.02 0.05 0.1 0.2 0.5 Drain Current I D (A) 1 2 2SK1838(L), 2SK1838(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Sorce Voltage 1000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 di / dt = 100 A / s V GS = 0, Ta = 25C 100 Ciss Coss 10 20 Crss 10 0.05 0.1 0.2 0.5 2 1 1 0 5 Dynamic Input Characteristics 100 I D = 0.5 A . V GS = 10 V,V DD =. 30 V PW = 2 s, duty 1 % 16 V GS 12 300 VDD = 200 V 100 V V DS 8 50 V 4 VDD = 200 V 100 V Switching Time t (ns) 50 400 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 50 Switching Characteristics 20 500 100 40 Drain to Sourve Voltage VDS (V) Reverse Drain Current IDR (A) 200 30 20 10 tf 20 td (off) 10 td (on) 5 tr 2 50 V 0 4 8 12 Gate Charge Qg (nc) 16 20 0 1 0.05 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 5 2SK1838(L), 2SK1838(S) Reverse Drain Current vs. Source to Drain Voltage 1.0 Reverse Drain Current IDR (A) Pulse Test 0.8 0.6 0.4 0.2 VGS = 10 V 0, - 5 V 0 0.8 0.4 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25C 1.0 0.5 0.3 0.2 0.1 0.05 0.1 0.02 hot 1s 0.03 ch - c(t) = s(t) . ch - c ch - c = 12.5C / W. Tc = 25C PW D= T P DM se Pul 0.01 0.01 10 T 100 100 m 10 m 1m PW 1 10 Pulse Width PW (S) Vin Monitor 90 % Vout Monitor D.U.T Vin 10 % RL Vout Vin 10 V 50 . V DD =. 30 V 90 % td (on) 6 10 % tr 10 % 90 % td (off) tf 2SK1838(L), 2SK1838(S) Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. 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