2SK1838(L), 2SK1838(S)
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
123
123
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1838(L), 2SK1838(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID1A
Drain peak current ID(pulse)*12A
Body to drain diode reverse drain current IDR 1A
Channel dissipation Pch*210 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2SK1838(L), 2SK1838(S)
3
20
15
10
5
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
Drain Current I (A)
D
DS
13 10 30 100 300 1000
0.1
0.3
1
3
10
100 s
PW = 10 ms (1 shot)
10 s
µ
Operation in this area
is limited by R (on)
DS
1 ms
Ta = 25°C
0.03
0.01
DC Operation (Tc = 25°C)
µ
Maximum Safe Operation Area
Drain to Source Voltage V (V)
Drain Current I (A)
DS
D
0246810
0.2
0.4
0.6
0.8
1.0
Pulse Test
8 V
10 V
6 V
4.5 V
4 V
V = 3.5 V
GS
5 V
Typical Output Characteristics
Gate to Source Voltage V (V)
Drain Current I (A)
GS
D
Tc = 75°C 25°C
– 25°C
Pulse Test
V = 10 V
DS
0246810
0.2
0.4
0.6
0.8
1.0
Typical Transfer Characteristics
2SK1838(L), 2SK1838(S)
4
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
V (on) (V)
04
812
16 20
1
2
3
4
5
GS
DS
Pulse Test
0.5 A
0.2 A
I = 0.1 A
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I (A)
0.02 0.05 0.1 0.2 0.5 12
0.5
1
2
5
10
20
50
Static Drain–Source on State
Resistance R (on) ( )
Ω
DS
Pulse Test
V = 10 V
GS
D
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature Tc (°C)
Static Drain–Source on State
Resistance R (on) ( )
Ω
– 40 0 40 80 120 160
0
5
10
15
20
25
DS
0.2 A
I = 0.5 A
D
Pulse Test
V = 10 V
GS
0.1 A
Static Drain to Source on State
Resistance vs. Temperaure
Drain Current I (A)
Forward Transfer Admittance
|y | (S)
fs
D
0.02 0.05 0.1 0.2 0.5 1 2
0.05
0.1
0.2
0.5
1
2
5
Tc = – 25°C
25°C
75°C
Pulse Test
V = 10 V
DS
Forward Transfer Admittance
vs. Drain Current
2SK1838(L), 2SK1838(S)
5
Reverse Drain Current I (A)
Reverse Recovery Time trr (ns)
DR
0.05 0.1 0.2 0.5 1 25
10
20
50
100
200
500
1000
di / dt = 100 A / s
V = 0, Ta = 25°C
µ
GS
Body to Drain Diode Reverse
Recovery Time
Drain to Sourve Voltage V (V)
Capacitance C (pF)
DS
010 20 30 40 50
1
10
100
1000
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
Typical Capacitance
vs. Drain to Sorce Voltage
Gate Charge g (nc)
Drain to Source Voltage V (V)
04 8 12 16 20
100
200
300
400
500
DS
Q
100 V
50 V
V = 200 V
DD
V
GS
V
DS
I = 0.5 A
D
V = 200 V
DD
100 V
50 V 0
4
8
12
16
20
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
Switching Time t (ns)
0.05 0.1 0.2 0.5 125
1
2
5
10
20
50
100
D
V = 10 V,V 30 V
PW = 2 s, duty 1 %
GS
µ
=
..
DD
td (off)
tf
td (on)
tr
Switching Characteristics
2SK1838(L), 2SK1838(S)
6
Source to Drain Voltage V (V)
Reverse Drain Current I (A)
SD
DR
0 0.4 0.8 1.2 1.6 2.0
0.2
0.4
0.6
0.8
1.0
Pulse Test
0, – 5 V
V = 10 V
GS
Reverse Drain Current
vs. Source to Drain Voltage
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1.0
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance s (t)
γ
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = s(t) ch – c
ch – c = 12.5°C / W. Tc = 25°C
PD = PW
T
PW
T
DM
γ.
θθ
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
Vout Monitor
R
V 30 V
50
Vin
10 V
D.U.T
DD
L
=
..
Ω
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
tr tf
Vout 10 %
2SK1838(L), 2SK1838(S)
7
Notice
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part of this document without Hitachi’s permission.
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any other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
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party or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
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APPLICATIONS.
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