GU-E 1 Form B (AQY41❍EH)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons , the initial letters of the part number “A QY”, the surf ace mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked
on the relay. (Ex. the label for product number AQY412EHAX is 412EH.)
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Normally closed DIP4-pin
economic type with
reinforced insulation GU-E 1 F orm B
(AQY41❍EH)
Type I/O isolation
voltage
Output rating*
Package
Part No. Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage Load
current Tube packing style Tape and reel packing style Tube Tape and reel
Pick ed from the
1/2-pin side Pick ed from the
3/4-pin side
AC/DC
dual use Reinforced
5,000 V
60 V 550 mA DIP4-pin AQY412EH AQY412EHA AQY412EHAX AQY412EHAZ 1 tube contains:
100 pcs.
1 batch contains:
1,000 pcs.
1,000 pcs.350 V 130 mA AQY410EH AQY410EHA AQY410EHAX AQY410EHAZ
400 V 120 mA AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Remarks
Input
LED forward current IF50 mA
LED reverse voltage VR5 V
Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL60 V 350 V 400 V
Continuous load current IL0.55 A 0.13 A 0.12 A Peak AC, DC
Peak load current Ipeak 1.5 A 0.4 A 0.3 A 100 ms (1 shot), VL= DC
Power dissipation Pout 500 mW
Total power dissipation PT550 mW
I/O isolation voltage Viso 5,000 V A C
Temperature
limits Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures
Storage Tstg –40°C to +100°C –40°F to +212°F
TESTING
(AQY410EH, 414EH)
(AQY412EH)
VDE
mm inch
FEATURES
1. High cost-performance type of
PhotoMOS relay 1 Form B output
2. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
3. Reinforced insulation of 5,000 V
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-le vel analog signals without
distortion.
5. High sensitivity and low on-
resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of typ.1Ω
(AQY412EH).
6. Low-level off-state leakage current
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Modem
• Telephone equipment
• Electricity, plant equipment
• Sensing equipment
3.2
6.4
4.78
2.9
6.4
4.78
.126
.252
.188
.114
.252
.188
1
2
4
3
Compliance with RoHS Directive
Source electrode
N–
N+
N+N+
P+N+N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
PhotoMOS.book Page 137 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
GU-E 1 Form B (AQY41❍EH)
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
*Operate/Reverse time
RECOMMENDED OPERATING CONDITIONS
Please obey the following conditions to ensure proper relay operation and resetting.
■ For Dimensions
■ For Schematic and Wiring Diagrams
■ For Cautions for Use
■ These products are not designed for automotive use.
If you are considering to use these products for automotive applications, please contact your local Panasonic Electric
Works technical representative.
For more information
REFERENCE DATA
Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Condition
Input
LED operate (OFF) current Typical IFoff 1.4 mA IL=Max.
Maximum 3.0 mA
LED reverse (ON) current Minimum IFon 0.4 mA IL=Max.
Typical 1.3 mA
LED dropout
voltage Typical VF1.25 (1.14 V at IF = 5 mA) IF = 50 mA
Maximum 1.5 V
Output On resistance Typical Ron 1Ω18Ω26ΩIF = 0 mA
IL = Max.
Within 1 s on time
Maximum 2.5
Ω
25
Ω
35
Ω
Off state leakage current Maximum ILeak 10µAIF = 5 mA
VL = Max.
Transfer
characteristics
Operate (OFF) time* Typical Toff 3.0 ms 1.0 ms 0.8 ms IF = 0 mA ➝ 5 mA
IL = Max.
Maximum 10.0 ms 3.0 ms
Reverse (ON) time* Typical Ton 0.2 ms 0.3 ms 0.2 ms IF = 5 mA ➝ 0 mA
IL = Max.
Maximum 1.0 ms
I/O capacitance Typical Ciso 0.8 pF f =1MHz
VB = 0 V
Maximum 1.5 pF
Initial I/O isolation resistance Minimum Riso 1,000MΩ500 V DC
Item Symbol Recommended value Unit
Input LED current IF5 to 10 mA
Toff
Input
Output 10%
90%
Ton
1-(1). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 3 and 4;
LED current: 0 mA; Load voltage: Max.(DC);
Continuous load current: Max. (DC)
0
200
150
100
50
0 20 40 60–20
8085
100–40
AQY410EH
AQY414EH
Ambient temperature, °C
Load current, mA
Load current, mA
0
200
300
400
500
600
700
100
Ambient temperature, °C
0 20 40 60
8085
100-40 -20
AQY412EH
On resistance, Ω
0
10
20
30
40
-40 -20
50
0 20 40 60
8085
Ambient temperature, °C
AQY410EH
AQY414EH
AQY412EH
PhotoMOS.book Page 138 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
GU-E 1 Form B (AQY41❍EH)
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate (OFF) current vs. ambient
temperature characteristics
Sample: All types;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
Operate (OFF) time, ms
0
3
2
1
4
5
6
-40 -20
7
0 20 40 60
8085
Ambient temperature, °C
AQY410EH
AQY414EH
AQY412EH
Reverse (ON) time, ms
0
0.2
0.4
0.6
-40 -20
0.8
0 20 40 60
80 85
Ambient temperature, °C
AQY410EH
AQY414EH
AQY412EH(A)
Ambient temperature, °C
LED operate (OFF) current, mA
0
1
2
3
4
–40 –20
5
0 20 40 60
80 85
6. LED reverse (ON) current vs. ambient
temperature characteristics
Sample: All types;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
7. LED dropout voltage vs. ambient
temperature characteristics
LED current: 5 to 50 mA
8-(1). Current vs. v oltage characteristics of out-
put at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25°C 77°F
Ambient temperature, °C
LED reverse (ON) current, mA
0
1
2
3
4
–40 –20
5
0 20 40 60
80 85
Ambient temperature, °C
LED dropout voltage, V
0–40 –20 20 40 60
80 85
1.5
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
20
40
60
80
140
120
100
–3 –2 –1–2.5 –1.5 –0.5 1.5 2.5123
–20
–40
–60
–80
–100
–120
–140
AQY410EH
AQY414EH
0.5
Voltage, V
Current, mA
8-(2). Current vs. v oltage characteristics of out-
put at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25°C 77°F
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 3 and 4;
Ambient temperature: 25°C 77°F
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
0.2
0
0.4
0.6
-0.2
-0.4
-0.6
-1 -0.5 0.5
01
Voltage, V
AQY412EH
Current, A
Off state leakage current, A
200 6040 80 100
Load voltage, V
10–3
10–6
10–9
10–12
AQY410EH
AQY412EH
AQY414EH
Operate (OFF) time, ms
100 20 30 40 50 60
5
4
2
3
1
0
LED forward current, mA
AQY410EH,AQY414EH
AQY412EH
11. Re v erse (ON) time vs. LED f orward current
characteristics
Measured portion: between terminals 3 and 4;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 3 and 4;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
Reverse (ON) time, ms
LED forward current, mA
10 20 30 40 50 60100 20 30 40 50 60
0.5
0.4
0.3
0.2
0.1
0
AQY410EH
AQY412EH,AQY414EH
Output capacitance, pF
0
500
400
300
200
100
Applied voltage, V
10 20 30 40 60
50
0
AQY410EH,AQY414EH
AQY412EH
PhotoMOS.book Page 139 Thursday, March 26, 2009 2:21 PM
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
