Data Sheet, Doc. No. 5SYA 1417-03 06-2012 5SNA 2400E170305 HiPak IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Collector-emitter voltage Symbol Conditions VCES VGE = 0 V, Tvj min 25 C max Unit 1700 V DC collector current IC TC = 105 C, Tvj = 150 C 2400 A Peak collector current ICM tp = 1 ms 4800 A Gate-emitter voltage VGES Total power dissipation Ptot DC forward current 20 V TC = 25 C, Tvj = 150 C -20 17800 W 2400 A Peak forward current IFRM tp = 1 ms 4800 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 18000 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature IF VCC = 1200 V, VCEM CHIP VGE 15 V, Tvj 1700 V 150 C 1 min, f = 50 Hz 4000 V 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C 4 6 Ms Mounting torques 2) 1) 2) Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Collector cut-off current Gate leakage current Gate-emitter threshold voltage Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 1700 VCE sat IC = 2400 A, VGE = 15 V ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 3) 4) td(on) tr td(off) tf Eon Eoff ISC Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 VCE = 1700 V, VGE = 0 V VCE = 0 V, VGE = 1.8 2.05 2.3 V 2.4 2.65 V Tvj = 150 C 2.45 Tvj = 25 C 0.04 1 mA Tvj = 125 C 30 60 mA Tvj = 150 C 170 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 2400 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load tpsc 10 s, VGE = 15 V, VCC = 1200 V, VCEM CHIP 1700 V V 2.15 IC = 2400 A, VCE = 900 V, VGE = -15 V ..15 V VCC = 900 V, IC = 2400 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load Unit Tvj = 125 C 20 V, Tvj = 125 C VCC = 900 V, IC = 2400 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load max Tvj = 25 C IC = 240 mA, VCE = VGE, Tvj = 25 C VCC = 900 V, IC = 2400 A, RG = 0.6 , CGE = 0 nF, VGE = 15 V, L = 50 nH, inductive load typ V mA -500 500 nA 5.3 7.3 V 21 C 239 nF 20.9 nF 9.24 nF Tvj =25 C 450 ns Tvj =125 C 480 ns Tvj =150 C 490 ns Tvj =25 C 230 ns Tvj =125 C 240 ns Tvj =150 C 250 ns Tvj =25 C 1165 ns Tvj =125 C 1280 ns Tvj =150 C 1310 ns Tvj =25 C 220 ns Tvj =125 C 250 ns Tvj =150 C 260 ns Tvj =25 C 450 mJ Tvj =125 C 680 mJ Tvj =150 C 750 mJ Tvj =25 C 750 mJ Tvj =125 C 980 mJ Tvj =150 C 1060 mJ Tvj =150 C 10000 A Diode characteristic values 5) Parameter Forward voltage Symbol 6) VF Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) min IF = 2400 A Irr Recovered charge 5) Conditions VCC = 900 V, IF = 2400 A, VGE = 15 V, RG = 0.6 , CGE = 0 nF, di/dt = 11.0 kA/s L = 50 nH, inductive load Erec typ max Unit Tvj =25 C 1.65 1.95 V 2.0 Tvj =125 C 1.67 Tvj =150 C 1.6 V V Tvj =25 C 1920 A Tvj =125 C 2180 A Tvj =150 C 2350 A Tvj =25 C 680 C Tvj =125 C 1220 C Tvj =150 C 1440 C Tvj =25 C 620 ns Tvj =125 C 990 ns Tvj =150 C 1060 ns Tvj =25 C 560 mJ Tvj =125 C 870 mJ Tvj =150 C 1030 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance Conditions min max Unit Rth(j-c)IGBT 0.007 K/W Rth(j-c)DIODE 0.012 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.009 K/W 0.018 K/W 8 nH 2) Comparative tracking index CTI Module stray inductance L grease = 1W/m x K 400 CE TC =25 C Resistance, terminal-chip 2) typ RCC'+EE' 0.055 TC =125 C 0.075 TC =150 C 0.080 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 min typ 190 x 140 x 38 according to IEC 60664-1 Term. to base: 23 and EN 50124-1 Term. to term: 19 according to IEC 60664-1 and EN 50124-1 Term. to base: 33 Term. to term: 32 max Unit mm mm mm 1380 g Electrical configuration 9 7 5 8 6 4 3 2 1 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 4800 4800 VCE = VGE 4000 4000 25 C 3200 125 C 2400 IC [A] IC [A] 3200 150 C 1600 2400 1600 150 C 25 C 800 800 125 C VGE = 15 V 0 0 0 1 2 3 4 5 6 7 8 9 VCE [V] Fig. 1 10 11 12 13 VGE [V] Typical on-state characteristics, chip level Fig. 2 4800 Typical transfer characteristics, chip level 4800 Tvj = 25 C 4000 4000 19 V 17 V 3200 3200 15 V 17 V IC [A] IC [A] 19 V 2400 15 V 13 V 2400 11 V 9V 13 V 1600 1600 11 V 9V 800 800 Tvj = 150 C 0 0 0 1 2 3 4 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 1 2 3 VCE [V] Fig. 4 Typical output characteristics, chip level 4 5 2.5 4.0 VCC = 900 V VGE = 15 V RG = 0.6 ohm L = 50 nH 2.0 VCC = 900 V IC = 2400 A VGE = 15 V L = 50 nH 3.5 Eon 2.5 1.5 Eon, Eoff [J] Eon, Eoff [J] 3.0 Eoff 1.0 2.0 Eoff 1.5 Eon 1.0 0.5 0.5 Tvj = 125 C Tvj = 150 C 0.0 Tvj = 125 C Tvj = 150 C 0.0 0 800 1600 2400 3200 4000 4800 0 1 2 IC [A] Fig. 5 4 5 RG [ohm] Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V IC = 2400 A VGE = 15 V Tvj = 125 C L = 50 nH td(off) 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 3 td(on) tf t d(off) t d(on) 1 tr 0.1 tr VCC = 900 V VGE = 15 V RG = 0.6 ohm Tvj = 125 C L = 50 nH 0.01 0 800 1600 2400 3200 4000 tf 0.1 0 4800 Fig. 7 Typical switching times vs collector current 6 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 1 2 3 RG [ohm] IC [A] Fig. 8 Typical switching times vs gate resistor 4 5 20 1000 Cies VCC = 900 V 15 100 VGE [V] VCC = 1300 V C [nF] Coes 10 10 Cres 5 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 2400 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 Vce[V] 25 30 Typical capacitances vs collector-emitter voltage Fig. 10 2.5 VCC 1200 V, Tvj = 150 C VGE = 15 V, RG = 0.6 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 chip module 0.0 0 500 1000 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 1500 0 35 2000 5 10 Qg [C] Typical gate charge characteristics 15 20 3000 2500 Erec VCC = 900 V VGE = 15 V RG = 0.6 ohm L = 50 nH 500 Tvj = 125 C Tvj = 150 C 800 1600 2400 3200 4000 Tvj = 125 C Tvj = 150 C 0 2 4800 3 4 5 6 7 8 9 10 11 12 13 14 di/dt [kA/s] IF [A] Fig. 12 RG = 1.5 ohm Erec 1000 500 0 0 Qrr RG = 0.47 ohm 1000 1500 RG = 0.6 ohm 1500 2000 RG = 2.2 ohm Qrr RG = 4.7 ohm Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] 2000 Irr RG = 0.83 ohm Irr RG = 1.0 ohm VCC = 900 V IF = 2400 A L = 50 nH 2500 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 4800 VCC 1200 V di/dt 14 kA/s Tvj = 150 C L = 50 nH 4800 25 C 4000 3600 125 C IR [A] IF [A] 3200 2400 2400 150 C 1600 1200 800 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 VF [V] Fig. 14 Typicial diode forward characteristics chip level 8 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 500 1000 VR [V] Fig. 15 Safe operating area diode (SOA) 1500 2000 0.1 Analytical function for transient thermal impedance: Z th(j-c) [K/W] IGBT, DIODE n Zth(j-c) Diode 0.01 R i (1 - e -t/ i ) Z th (j-c) (t) = i 1 IGBT Zth(j-c) IGBT i 1 2 3 4 Ri(K/kW) 5.059 1.201 0.495 0.246 i(ms) 202.9 20.3 2.01 0.52 Ri(K/kW) 8.432 1.928 0.866 0.839 i(ms) 210 29.6 7.01 1.49 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNA 2400E170305 | Doc. No. 5SYA 1417-03 06-2012 DIODE 0.001