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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.B
Abbreviated symbol : 52
Abbreviated symbol : 52
Abbreviated symbol : 52
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
ROHM : UMT3
EIAJ : SC-70
(1) GND
(2) IN
(3) OUT
ROHM : EMT3
DTA123YE
DTA123YUA
DTA123YKA
Each lead has same dimensions
(2)(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1
Each lead has same dimensions
1.6 0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
R
1
R
2
IN
R
1
=2.2kΩ R
2
=10kΩ
GND(+)
OUT
IN
GND(+)
OUT
-100mA / -50V Digital transistors
(with built-in resistors)
DTA123YE / DTA123YUA / DTA123YKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
TL
−
UMT3EMT3 SMT3
DTA123YE
Part No.
DTA123YUA
−
3000
T106
3000
−
−
T146
3000
−
−
DTA123YKA
Package
Package type TapingTapingTaping
Code
Basic ordering
unit (pieces)
Absolute maximum ratings (Ta=25C)
Inner circuit
Limits
Parameter Symbol
V
CC
−50
−12 to +5
−100
−100
150 200
150
−55 to +150
DTA123YE
DTA123YUA DTA123YKA
V
V
mA
mW
°C
°C
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.B
Data Sheet DTA123YE / DTA123YUA / DTA123YKA
Electrical characteristics (Ta=25C)
Parameter Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
−
−3
−
−
−
1.54
33
3.6
−
−
−
−0.1
−
−
2.2
−
4.5
250
−0.3
−
−0.3
−3.8
−0.5
2.86
−
5.5
−
VV
CC
=
−5V, I
O
=
−100μA
V
O
=
−0.3V, I
O
=
−20mA
I
O
/I
I
=
−10mA/−0.5mA
V
I
=
−5V
V
CC
=
−50V, V
I
=
0V
V
O
=
−5V, I
O
=
−10mA
V
CE
=
−
10V, I
E
=5mA, f=100MHz
V
mA
μA
kΩ
−
−−
−
MHz
Typ. Max. Unit Conditions
∗
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
Electrical characteristic curves
OUTPUT CURRENT : I
O
(A)
−
100
−
50
−
20
−
10
−5
−2
−1
−
500m
−
200m
−
100m
INPUT VOLTAGE : V
I(on)
(V)
−100μ−1m −10m −100m
V
O
=−
0.3
V
100
°C
25°C
Ta=−40°C
Fig.1 Input voltage vs. output current
(ON characteristics)
0
−
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
−
10m
−
1μ
−
2m
−
5m
−
1m
−
200μ
−
500μ
−
100μ
−
20μ
−
50μ
−
10μ
−
2μ
−
5μ
−
0.5
−
1.0
−
1.5
−
2.0
−
2.5
V
CC
=
−
5V
Ta=
100
°C
25°C
−40°C
Fig.2 Output current vs. input voltage
(OFF characteristics)
DC CURRENT GAIN : G
I
OUTPUT CURRENT : I
O
(A)
1k
500
200
100
50
20
10
5
2
1
−100μ−1m −10m −100m
V
O
=−5V
−40°C
25°C
Ta=
100
°C
Fig.3 DC current gain vs. output
current
OUTPUT VOLTAGE : V
O(on)
(V)
OUTPUT CURRENT : I
O
(A)
−1
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
I
O
/I
I
=20
−100μ−1m −10m −100m
−40°C
25°C
Ta=
100
°C
Fig.4 Output voltage vs. output
current
R0039
A
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