VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode * 150 C max. operation junction temperature * Designed and JEDEC-JESD47 2 qualified according to * Fully isolated package (VINS = 2500 VRMS) * UL E78996 approved * Compliant to RoHS Directive 2002/95/EC TO-220 FULL-PAK 1 Cathode 3 Anode * Halogen-free according to IEC 61249-2-21 defintion (-M3 only) APPLICATIONS PRODUCT SUMMARY Package These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. TO-220FP IF(AV) 10 A VR 200 V, 400 V, 600 V VF at IF 1.2 V IFSM 160 A trr 50 ns TJ max. 150 C Diode variation Single die Snap factor 0.5 DESCRIPTION The VS-10ETF0..FP... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL VRRM IF(AV) VALUES UNITS 200 to 600 V 10 Sinusoidal waveform A 150 IFSM trr 1 A, 100 A/s 50 VF 10 A, TJ = 25 C 1.2 V - 40 to 150 C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA TJ ns VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V PART NUMBER VS-10ETF02FPPbF, VS-10ETF02FP-M3 200 300 VS-10ETF04FPPbF, VS-10ETF04FP-M3 400 500 VS-10ETF06FPPbF, VS-10ETF06FP-M3 600 700 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Revision: 10-Jan-12 TEST CONDITIONS VALUES TC = 98 C, 180 conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 150 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated VRRM applied 112.5 10 ms sine pulse, no voltage reapplied 160 t = 0.1 to 10 ms, no voltage reapplied 1600 UNITS A A2s A2s Document Number: 94089 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER Maximum forward voltage drop VFM rt Forward slope resistance VF(TO) Threshold voltage Maximum reverse leakage current IRM TEST CONDITIONS 10 A, TJ = 25 C TJ = 150 C TJ = 25 C UNITS 1.2 V 23.5 m 0.85 V 0.1 VR = Rated VRRM TJ = 150 C VALUES mA 3.0 RECOVERY CHARACTERISTICS SYMBOL PARAMETER Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr TEST CONDITIONS IF at 10 Apk 25 A/s 25 C S Snap factor VALUES UNITS 145 ns 2.75 A 0.32 C IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device Revision: 10-Jan-12 UNITS - 40 to 150 C 2.5 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Case style TO-220 FULL-PAK 10ETF02FP 10ETF04FP 10ETF06FP Document Number: 94089 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors 20 10ETF.. Series RthJC (DC) = 2.5 C/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 130 O Conduction angle 120 110 100 90 30 60 90 120 10ETF.. Series TJ = 150 C 16 120 180 DC 30 RMS limit 12 8 O 4 Conduction period 0 0 2 6 4 10 8 12 4 0 Average Forward Current (A) 8 12 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 160 150 10ETF.. Series RthJC (DC) = 2.5 C/W 140 At any rated load condition and with rated VRRM applied following surge. 140 130 O Conduction period 120 110 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 60 180 80 Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 100 80 60 100 30 60 90 120 DC 180 0 2 4 6 8 10 12 14 16 10ETF.. Series 40 90 1 18 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 180 16 120 14 160 90 60 12 180 30 10 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 90 RMS limit 8 6 O 4 Conduction angle 2 10ETF.. Series TJ = 150 C 0 2 4 6 8 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Revision: 10-Jan-12 10 Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 140 120 100 80 60 0 Maximum non-repetitive surge current versus pulse train duration. 40 0.01 10ETF.. Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94089 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Instantaneous Forward Current (A) 100 1.4 10ETF.. Series TJ = 25 C 10ETF.. Series Qrr - Maximum Reverse Recovery Charge (C) 1.2 TJ = 150 C TJ = 25 C 10 IFM = 20 A 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 3.0 0 40 80 0.20 200 2.5 0.15 Qrr - Maximum Reverse Recovery Charge (C) 10ETF.. Series TJ = 150 C trr - Maximum Reverse Recovery Time (s) 160 Fig. 10 - Recovery Charge Characteristics, TJ = 25 C Fig. 7 - Forward Voltage Drop Characteristics IFM = 20 A IFM = 10 A 0.10 IFM = 5 A IFM = 2 A 0.05 10ETF.. Series TJ = 25 C IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A IFM = 1 A 0 0 0 40 80 120 160 200 0 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 11 - Recovery Charge Characteristics, TJ = 150 C 0.4 15 10ETF.. Series TJ = 25 C Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 C trr - Maximum Reverse Recovery Time (s) 120 dI/dt - Rate of Fall of Forward Current (A/s) Instantaneous Forward Voltage (V) 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C Revision: 10-Jan-12 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Recovery Current Characteristics, TJ = 25 C Document Number: 94089 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors 20 Irr - Maximum Reverse Recovery Current (A) 10ETF.. Series TJ = 150 C IFM = 20 A 16 IFM = 10 A IFM = 5 A 12 IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/s) ZthJC - Transient Thermal Impedance (C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 C 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 10ETF.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 10-Jan-12 Document Number: 94089 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T F 06 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = Single diode 4 - 5 - Package: T = TO-220 Type of silicon: F = Fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - FULL-PAK 8 - Environmental digit: 02 = 200 V 04 = 400 V 06 = 600 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10ETF02FPPbF 50 1000 Antistatic plastic tubes VS-10ETF02FP-M3 50 1000 Antistatic plastic tubes VS-10ETF04FPPbF 50 1000 Antistatic plastic tubes VS-10ETF04FP-M3 50 1000 Antistatic plastic tubes VS-10ETF06FPPbF 50 1000 Antistatic plastic tubes VS-10ETF06FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 10-Jan-12 www.vishay.com/doc?95005 TO-220 FP PbF www.vishay.com/doc?95009 TO-220 FP -M3 www.vishay.com/doc?95440 Document Number: 94089 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole O 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5 0.5 Revision: 20-Jul-11 5 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-10ETF02FPPBF VS-10ETF06FPPBF VS-10ETF04FPPBF