MBR1060CTF-E1 - BCD Semiconductor Manufacturing Limited

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

1

BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

General Description

High voltage dual Schottky rectifier suited for switch

mode power supplies and other power converters. This

device is intended for use in medium voltage opera-

tion, and particularly, in high frequency circuits where

low switching losses and low noise are required.

MBR1060C is available in TO-220-3, TO-220-3 (2)

and TO-220F-3 packages.

Features

·High Surge Capacity

·150oC Operating Junction Temperature

·10A Total (5A Each Diode Leg)

·Guard-ring for Stress Protection

·Pb-free Package

Applications

·Power Supply Output Rectification

·Power Management

·Instrumentation

Main Product Characteristics

Mechanical Characteristics

·Case: Epoxy, Molded

·Epoxy Meets UL 94V-0 @ 0.125in.

·Weight (Approximately):

1.9 Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

·Finish: All External Surfaces Corrosion Resistant

and Terminal

·Leads are Readily Solderable

·Lead Temperature for Soldering Purposes:

260oC Maximum for 10 Seconds

IF (AV) 2×5A

VRRM 60V

TJ 150oC

VF (max) 0.65V

Figure 1. Package Types of MBR1060C

TO-220-3 (Optional)TO-220F-3 TO-220-3 (2)

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Pin Configuration

Figure 2. Pin Configuration of MBR1060C (Top View)

T Package

(TO-220-3) (Optional)

Figure 3. Internal Structure of MBR1060C

1

2

3

A1

K

A2

TF Package

(TO

-

220F-3)

(TO-220-3

(2))

A1

A2

K

1

2

3

A1

K

A2

1

2

3

A1

K

A2

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Package Part Number Marking ID Packing Type

Lead Free Green Lead Free Green

TO-220-3 (2) MBR1060CT-E1 MBR1060CT-G1 MBR1060CT-E1 MBR1060CT-G1 Tube

TO-220F-3 MBR1060CTF-E1 MBR1060CTF-G1 MBR1060CTF-E1 MBR1060CTF-G1 Tube

Ordering Information

Circuit Type

E1: Lead Free

MBR1060C -

Blank: Tube

G1: Green

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with

"G1" suffix are available in green packages.

Package

T: TO-220-3 (2)

TF: TO-220F-3

TO-220-3 (Optional)

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

60 V

Average Rectified Forward Current

(Rated VR) TC=140oC

IF (AV) 5A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20kHz) TC=139oCIFRM 10 A

Non Repetitive Peak Surge Current (Surge Applied at Rated

Load Conditions Half Wave, Single Phase, 60Hz) IFSM 100 A

Operating Junction Temperature (Note 2) TJ150 oC

Storage Temperature Range TSTG -55 to 150 oC

Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs

ESD (Machine Model=C) >400 V

ESD (Human Body Model=3B) >8000 V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ<1/θJA.

Absolute Maximum Ratings (Each Diode Leg) (Note 1)

Parameter Symbol Condition Value Unit

Maximum Thermal Resistance

θJC Junction to Case

TO-220-3/

TO-220-3 (2) 3.0

oC/W

TO-220F-3 3.5

θJA Junction to Ambient

TO-220-3/

TO-220-3 (2) 60

TO-220F-3 60

Thermal Characteristics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Parameter Symbol Condition Value Unit

Maximum Instantaneous Forward

Voltage Drop (Note 3) VF

IF=5A, TC=25oC0.75

V

IF=5A, TC=125oC0.65

IF=10A, TC=25oC0.90

IF=10A, TC=125oC0.80

Maximum Instantaneous Reverse Cur-

rent (Note 3) IR

Rated DC Voltage, TC=25oC0.1

mA

Rated DC Voltage, TC=125oC15.0

Electrical Characteristics (Each Diode Leg)

Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Figure 4. Typical Forward Voltage Per Diode

Figure 5. Typical Reverse Current Per Diode

Typical Performance Characteristics

0.01

0.1

1

10

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VF, Instantaneous Forward Voltage (V)

IF, Instantaneous Forward Current (A)

25oC

125oC

150oC

0 102030405060

0.1

1

10

100

1000

10000

100000

IR, Reverse Current (µA)

VR, Reverse Voltage (V)

25oC

125oC

150oC

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Typical Performance Characteristics (Continued)

Figure 6. Average Forward Current vs. Case Temperature (Per Diode)

100 105 110 115 120 125 130 135 140 145 150 155 160

0

1

2

3

4

5

6

7

8

9

10

Average Forward Current (A)

Case Temperature (oC)

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Mechanical Dimensions

TO-220-3 Unit: mm(inch)

φ3.560(0.140)

14.230(0.560)

1.160(0.046)

0.813(0.032)

8.763(0.345)

2.540(0.100)

0.356(0.014)

2.080(0.082)

3°

7°

3.560(0.140)

7°

9.660(0.380)

0.550(0.022)

60°

0.381(0.015)

2.580(0.102)

60°

8.520(0.335)

φ1.500(0.059)

0.200(0.008)

1.850(0.073)

2.540(0.100)

0.381(0.015)

0.406(0.016)

3.380(0.133)

10.660(0.420)

4.060(0.160) 1.350(0.053)

27.880(1.098)

30.280(1.192)

9.520(0.375)

16.510(0.650)

4.820(0.190)

2.880(0.113)

1.760(0.069)

(Optional)

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Mechanical Dimensions (Continued)

TO-220-3 (2) Unit: mm(inch)

∅

3°

9.800(0.386)

10.200(0.402)

3.560(0.140)

3.640(0.143)

11.100(0.437)

REF

0.700(0.028)

0.900(0.035)

1.170(0.046)

1.390(0.055)

2.540(0.100)

REF

2.540(0.100)

REF

9.600(0.378)

10.600(0.417)

12.600(0.496)

13.600(0.535)

9.000(0.354)

9.400(0.370)

1.200(0.047)

1.400(0.055)

0.600(0.024)

REF

6.300(0.248)

6.700(0.264)

4.400(0.173)

4.600(0.181)

2.200(0.087)

2.500(0.098)

0.400(0.016)

0.600(0.024)

1.620(0.064)

1.820(0.072) 1.200(0.047)

1.400(0.055)

3.000(0.118)

REF

∅

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR1060C

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BCD Semiconductor Manufacturing LimitedMar. 2011 Rev. 1. 3

Data Sheet

Mechanical Dimensions (Continued)

TO-220F-3 Unit: mm(inch)

4.300(0.169)

0.450(0.018)

0.600(0.024)

2.540(0.100)

9.700(0.382)

10.300(0.406)

6.900(0.272)

7.100(0.280)

3.000(0.119)

3.400(0.134)

14.700(0.579)

16.000(0.630)

1.000(0.039)

1.400(0.055)

1.100(0.043)

1.500(0.059)

2.790(0.110)

4.500(0.177)

12.500(0.492)

13.500(0.531)

0.550(0.022)

0.900(0.035)

2.540(0.100)

3.000(0.119)

3.550(0.140)

3.370(0.133)

3.900(0.154)

2.350(0.093)

2.900(0.114)

4.900(0.193)

ٛ

∅

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277