ome R00 was aE Si ciamaumeeeseeemeeermenses AU DE MP A4LFR74 9027795 4 T - 3469674 FAIRCHILD SEMICONDUCTOR 84D 27795 D en cemereeremereneeenn 2N6757/2N6758 FAIRCHILD N-Channel Power MOSFETs, A Schlumberger Company 9 A, 150 V/200 V T-39-11 Power And Discrete Division Description TO-204AA These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed S applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. semey men rue one @ Ves Rated at +20 V ? iS) Silicon Gate for Fast Switching Speeds 1520020F i Ipss, Rosen) Specified at Elevated Temperature 2N6757 * Rugged 2N6758 @ Low Drive Requirements @ Ease of Parailleling Maximum Ratings . Rating Rating - Symbol Characteristic 2N6758 2N6757 Unit Voss Drain to Source Voltage 200 150 v Vpar Drain to Gate Voitage 200 200 Vv : Res = 1 MQ { Ves Gate to Source Voltage +20 +20 Vv Ty, Tst Operating Junction and -55 to +150 -55 to +150 C - d 9 Storage Temperatures Th Maximum Lead Temperature 300 300 C for Soldering Purposes, i 1/16 From Case for 10 s | Maximum On-State Characteristics | Rosvon) Static Drain-to-Source 0.4 0.6 Q On Resistance ire at atin Ip Drain Current A Continuous at To = 25C 9.0 8.0 Continuous at Tc = 100C 6.07 5.0? lpm Pulsed 152 122 Maximum Thermal Characteristics Raic Thermal Resistance, 1.67 1.67 C/W Junction to Case Pp Total Power Dissipation 75 75 Ww at To = 25C Linear Derating Factor 0.6 0.6 W/C Notes All values are JEDEG registered except as noted. For information concerning connection diagram and package outline, refer to Section 7. om [0 ce eee 2N6757/2N6758 84D 27796 84 DEG 3469674 goa77ib o | 3469674 FAIRCHILD SEMICONDUCTOR D T-39-11 Electrical Characteristics (Tc = 25C unless otherwise noted) Symbo! Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Viaryoss | Drain Source Breakdown Voltage Vv Ves=0 V, Ipb=1 mA 2N6758 2007 2N6757 1507 loss Zero Gate Voltage Drain Current 1 mA Vos = Rated Voss, Vas = 0 V 4 Vps = Rated Voss, Ves =0 V, To = 125C lass Gate-Body Leakage Current 100 nA Vag = +20 V, Vps=0 V On Characteristics Vestth) Gate Threshold Voltage 2.0 4.0 Vv Ip = 1 MA, Vos = Vas Rpston) Static Drain-Source On-Resistance 2 Veg = 10 V 2N6758 0.4 ID=6A 2N6757 0.6 Ip=5 A 2N6758 0.75 Ip=6 A, To = 126C 2N6757 1.13 Ip=5 A, To = 125C Vpsjon) | Drain-Source On-Voltage" V 2N6758 3.6 Vas =10 V; ID=9A 2N6757 48 Veg =10 V; Ip=BA Sts Forward Transconduetance! 3.0 9.0 S @) Vops=15 V, ID=6A Dynamic Characteristics Cigs Input Capacitance 350 800 pF Vps = 25 V, Vag =0 V Coss Output Capacitance 100 450 pF f= 1.0 MHz Crss Reverse Transfer Capacitance 40 150 pF Switching Characteristics (Tc = 25C, Figures 9, 10) tafon) Turn-On Delay Time 30 ns Vpp = 90 V, Ip=6A tr Rise Time 50 ns nose % Reen= 15 2 tarot Turn-Off Delay Time 50 ns ty Fall Time 40 ns Q, Total Gate Charge 30 nc Vas = 10 V, Ip=12 A Vpp = 120 V 2-9 went ae ~~" = 84 DE RPS469674 g027747 2 I 7 3469674 FAIRCHILD SEMICONDUCTOR . 84D 27797 D 2N6757/2N6758 T~39-11 Electrical Characteristics (Cont.) (To = 25C unless otherwise noted) Symbol Characteristic | Min Typ | Max | Unit Test Conditions Source-Drain Diode Characteristics : Is Continuous Source Current A ; 2N6758 9.0 : 2N6757 8.0 ism Pulsed Source Current A 2N6758 15? ; 2N6757 122 | Vsp Diode Forward Voitage \ 2N6758 0.80 1.60 Vv Vlas =0 V ' is=9A 2N6757 0.76 1.50 Vv Is=8A ty Reverse Recovery Time 650? ns Ves =0 V, Ty = 150C Ip = Igy. dig/dt = 100 A/pS Qar Reverse Recovery Charge 10? uc Vas =0 V, Ty = 150C i lz =Isu, dig/dt = 7100 A Notes 1. Pulse test: Pulse width <300 ys, Duty cycle <2% 2. Non-JEDEC registered value. Typical Performance Curves Figure 2 Static Drain to Source Resistance vs Drain Current Figure 1 Output Characteristics = v Bin v uw 70 & tT Vag = 10V 3 E oa i zi zo 3 52 z ob = Ea oa Be 4 t 3 g 0 1 2 3 4 s o 4 8 2 16 20 VosDRAIN SOURCE VOLTAGEV lb DRAIN CURRENTA PCLOZEOF Potozzer 2-10 emg AM or op 1 armen, ERIE ATO UC mere tiene a py pe Bsueauy 0027798 4 I 3469674 FAIRCHILD SEMICONDUCTOR - 84D 27798 D -_ ! 2N6757/2N6758 , T-39-11 | Typical Performance Curves (Cont) | Figure 4 Temperature Variation of Gate to Figure 3. Transfer Characteristics we 2 10V 8 4 Ip-DRAIN CURRENTA 3 1 3 & 7 9 VasGATE TO SOURCE VOLTAGEV PCICZB0F Figure 5 Capacitance vs Drain to Source Voltage to* 5 CCAPACITANCEpF 10 5 10! S10? VosDRAIN TO SOURCE VOLTAGEV PCIC2s0F Figure 7 Forward Biased Safe Operating Area 102 5 Sw ipDRAIN CURRENTA a tos Ty< 150C SINGLE PULSE === CURRENT 10 2 5 wl 2 5 102 2 5 103 VosORAIN TO SOURCE VOLTAGEV - PGH1490F Source Threshold Voltage i L i _ a s wb - = 2 NORMALIZED GATE THRESHOLD VOLTAGE o 50 0 50 100 150 T,--JUNCTION TEMPERATUREC POROs4 IF Figure 6 Gate to Source Voltage vs Total Gate Charge Yoo = VasGATE TO SOURCE VOLTAGEV Q 10 20 30 4 0 QgTOTAL GATE CHARGEnc Pa1oao0r Figure 8 Transient Thermal Resistance vs Time wt a s Pu a tp be ~~ t Duty Factor, D = 2 curves apply to traln of heating pulses: =To+Puye . 2nJ-c TRANSIENT THERMAL RESISTANCE"C/W = o : o So 4 10 101 102 109 10 1TIMEms eNom eae hy ve Wsues74 0027799 4b i = l - 3469674 FAIRCHILD SEMICONDUCTOR 84D 27799 OD | 2N6757/2N6758 : T-39-11 Typical Electrical Characteristics Figure 9 Switching Test Circuit Figure 10 Switching Waveforms AL PULSE GENERATOR Vour OUTPUT Vour INVERTED INPUT, Ving % 10% L PULSE WIDTH GROLSOF WroosooF 2-12