TIPP115, TIPP116, TIPP117
PNP SILICON POWER DARLINGTONS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●20 W Pulsed Power Dissipation
●100 V Capability
●2 A Continuous Collector Current
●4 A Peak Collector Current
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIPP115
TIPP116
TIPP117
VCBO
-60
-80
-100
V
Collector-emitter voltage (IB = 0)
TIPP115
TIPP116
TIPP117
VCEO
-60
-80
-100
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-2 A
Peak collector current (see Note 1) ICM -4 A
Continuous base current IB-50 mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 0.8 W
Pulsed power dissipation (see Note 3) PT20 W
Operating junction temperature range Tj-55 to +150 °C
Storage temperature range Tstg -55 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
TIPP115, TIPP116, TIPP117
PNP SILICON POWER DARLINGTONS
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -10 mA
(see Note 4)
IB = 0
TIPP115
TIPP116
TIPP117
-60
-80
-100
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
VCE = -50 V
VBE =0
VBE =0
VBE =0
TIPP115
TIPP116
TIPP117
-2
-2
-2
mA
ICBO
Collector-base
cut-off current
VCE = -60 V
VCE = -80 V
VCE = -100 V
IB=0
IB=0
IB=0
TIPP115
TIPP116
TIPP117
-1
-1
-1
mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -2 mA
hFE
Forward current
transfer ratio
VCE = -4 V
VCE = -4 V
IC=-1A
IC= -2 A (see Notes 4 and 5) 1000
500
VCE(sat)
Collector-emitter
saturation voltage IB = -8 mA IC= -2 A (see Notes 4 and 5) -2.5 V
VBE
Base-emitter
voltage VCE = -4 V IC= -2 A (see Notes 4 and 5) -2.8 V
VEC
Parallel diode
forward voltage IE = -4 A IB= 0 (see Notes 4 and 5) -3.5 V
