1
FEATURES
0.25μm, five-layer metal, ViaLinkTM epitaxial CMOS
process for smallest die sizes
One-time pro grammable, ViaLink technology for
personalization
Typical performance characteristics -- 120 MHz 16-bit
counters, 120 MHz datapaths, 60+ MHz FIFOs
2.5V core supply voltage, 3.3V I/O supply voltage
Up to 320,000 system gates (non-volatile)
I/Os
- Interfaces with 3.3 volt
- PCI compliant with 3.3 volt
- Full JTAG 1149.1 compliant
- Registered I/O cells with individually controlled enables
Radiation-hardened design; total dose irradiation testing to
MIL-STD-883 Test Method 1019
- Total-dose: 300 krad(Si)
- SEL Immune: >120MeV-cm2/mg
- LETTH (0.25) MeV-cm2/mg:
>42 logic cell flip flops
>64 for embedded SRAM
- Saturated Cross Section (cm2) per bit
5.0E-7 logic cell flip flops
2.0E-7 embedded SRAM
Up to 24 dual-port RadHard SRAM modules, organized in
user-configurable 2,304 bit blocks
- 5ns access times, each port independently accessible
- Fast and efficient for FIFO, RAM, and initialized RAM
functions
100% routable with full logic cell utilization and 100% user
fixed I/O
Variable-grain logic cells provide high perform ance and
100% utilization
Typical logic utilization = 65-80% (design dependent)
Comprehensive design tools include high quality Verilog/
VHDL synthesis and simulation
QuickLogic IP available for microcontrollers, DRAM
controllers, USART and PCI
Packaged in a 208-pin CQFP, 288 CQFP, 484 CCGA, 484
CLGA, 208 PQFP, 280 PBGA, and 484 PBGA
Standard Microcircuit Drawing 5962-04229
- QML qualified
INTRODUCTION
The RadHard Eclipse Field Programmable Gate Array Family
(FPGA) offers up to 320,000 system gates including Dual-Port
RadHard SRAM modules. It is fabricated on 0.25μm five-layer
metal ViaLink CMOS process and contains a maximum of 1,536
logic cells and 24 dual-port RadHard SRAM modu les (see
Figure 1 Block Diagram). Each RAM module has 2,304 RAM
bits, for a maximum total of 55,300 bits. Please reference
product family comparison chart on page 2.
RAM modules are Dual Port (one asynchronous/synchronous
read port, one write port) and can be configured into one of four
modes (see Figure 2). Designers can cascade multiple RAM
modules to increase the depth or width allowed in single
modules by connecting corresponding address lines together and
dividing the words between modules (see Fi gure 3). This
approach allows a variety of address depths and word widths to
be tailored to a specific application.
The RadHard Eclipse FPGA is available in a 208-pin Cerquad
Flatpack, allowing access to 99 bi directio nal signal I/O, 1
dedicated clock, 8 programmable clocks and 16 high drive
inputs. Other package options include a 288 CQFP, 484 CCGA
and a 484 CLGA.
Aeroflex uses QuickLogic Corporation’s licensed ESP
(Embedded Standard Products) technology. QuickLogic is a
pioneer in the FPGA semiconductor and software tools field.
Standard Products
UT6325 RadHard Eclipse FPGA
Data Sheet
December 2006
www.aeroflex.com/RadHardFPGA
2
UT6325 Product Features
Features
Device System
Gates Logic
Cells Maximum
Flip Flops Logic
Cell Flip
Flops
RAM
Modules RAM
Bits I/O Standards Clocks High
Drive
Inputs
UT6325 320,640 1,536 4,002 3072 24 55,300 LVTTL,
LVCMOS3, PCI 9 16
Radiation
Device RadHard
Total Dose LETTH (0.25) MeV-cm2/mg Saturated Cross Section Latch-up
Immune
UT6325 3E5 >42 logic cell flip flops
>64 embedded SRAM 5.0E-7 logic cell flip flops
2.0E-7 embedded SRAM
>120
Bidirectional I/O per Package
Device 208 PQFP 208 CQFP 280PBGA 288 CQFP 484 PBGA 484 CLGA 484 CCGA
UT6325 99 99 163 163 310 310 310
3
Figure 1. RadHard Eclipse FPGA Block Diagram
Bidirectional I//O and
High-Drive Inputs
Maximum
of
1,536
High
Speed
Variable
Grain
Logic
Cells
IP
Maximum
of
24
RadHard
SRAM
Blocks
Fabric
Embedded RAM Blocks
Embedded RAM Blocks
4
Software support for the product is available from QuickLogic.
The turnkey QuickWorksTM package provides the most com-
plete software solution from design entry to logic synthesis,
place and route, simulation, static timing, and power analysis.
The QuickToolsTM for Workstations package provides a solu-
tion for designers who use Cadence, Exemplar, Mentor, Synop-
sys, Synplicity, Viewlogic, Veribest or other third-party tools
for design entry, synthesis, simulation. Please visit Quick Log-
ic’s website at www.quicklogic.com for more inform ation.
The variable gr ain l ogi c cell features up to 17 simultaneous in-
puts and 6 outputs wi thin a cell that can be fragmented into 6
independent sections. Each cell has a fan-in of 30 including
register and control lines (see Figure 5).
PRODUCT DESCRIPTION
I/O Pins
• Up to 310 bi-directional input/output pins, PCI-compliant for
3.3V buses (see Table 4)
• Each bidirectional I/O contains R adHard flip-flops for input,
output, and output enabl e lines
Distributed Networks
• One, dedicated clock network, hardwired to each logic cell
flip-flop clock pin to minimize skew
• Three programmable, global clock networks accessible from
clock input only pins
• Eight programmable clock networks, accessible from clock
pins or internal logic
• 20 pre-defined Quad-clock networds, five per quadrant. Ac-
cessed by the 8 programmable global clock netwo rks
• Sixteen high drive inputs. Two inputs located in each of the
eight I/O banks. Used as clock or enable signals for the I/O
RadHard flip-flops, or as high drive inputs for internal logic
Typical Performance
• Input + logic cell + output total delay s un der 12ns
• Data path speeds over 120 MHz
• Counter speeds over 120 MHz
• FIFO speeds over 60+ MHz
WA
WD
WE
WCLK
RE
RCLK
RA
RD
ASYNCRD
Figure 2. RadHard Eclipse FPGA RAM
RDATA
WDATA RAM
Module
(2,304 bits)
RAM
Module
(2,304 bits)
WDATA
WADDR
RDATA
Figure 3. RadHard Eclips e FPGA Module Bits
WADDR RADDR
(9:0)
(17:0)
(9:0)
(17:0)
MODE
(1:0)
5
QED
R
Figure 4. RadHard Eclipse FPGA I/O Cell
INPUT
REGISTER
D
Q
R
D
EQ
R
OUTPUT
REGISTER
OUTPUT
ENABLE
REGISTER
PAD
-
+
6
QS
A1
A2
A3
A4
A5
A6
OS
OP
B1
B2
C1
C2
MP
MS
D1
D2
E1
E2
NP
NS
F1
F2
F3
F4
F5
F6
PS
DCLK
AZ
OZ
QZ
FZ
NZ
Figure 5. RadHard Eclipse FPGA Logic Cell
Q2Z
PP
QC
CLKSEL
QR
GRST
DQ
DQ
R
S
R
S
7
Table 1: 208-pin Ceramic Quad Flatpack Pinout Table
Pin Function Pin Function Pin Function Pin Function Pin Function Pin Function
1PLLRST(3) 36 IO(B) 71 IO(C) 106 VCCPLL(1) 141 IO(F) 176 IO(G)
2VCCPLL(3) 37 IO(B) 72 VCCIO(C) 107 IO(E) 142 IO(F) 177 VCCIO(G)
3GND 38 IO(B) 73 IO(C) 108 GND 143 IO(F) 178 GND
4GND 39 IOCTRL(B) 74 IO(C) 109 IO(E) 144 IOCTRL(F) 179 IO(G)
5IO(A) 40 INREF(B) 75 GND 110 IO(E) 145 INREF(F) 180 IO(G)
6IO(A) 41 IOCTRL(B) 76 VCC 111 VCCIO(E) 146 VCC 181 IO(G)
7IO(A) 42 IO(B) 77 IO(C) 112 IO(E) 147 IOCTRL(F) 182 VCC
8VCCIO(A) 43 IO(B) 78 TRSTB 113 VCC 148 IO(F) 183 TCK
9IO(A) 44 VCCIO(B) 79 VCC 114 IO(E) 149 IO(F) 184 VCC
10 IO(A) 45 IO(B) 80 IO(D) 115 IO(E) 150 VCCIO(F) 185 IO(H)
11 IOCTRL(A) 46 VCC 81 IO(D) 116 IO(E) 151 IO(F) 186 IO(H)
12 VCC 47 IO(B) 82 IO(D) 117 IOCTRL(E) 152 IO(F) 187 IO(H)
13 INREF(A) 48 IO(B) 83 GND 118 INREF(E) 153 GND 188 GND
14 IOCTRL(A) 49 GND 84 VCCIO(D) 119 IOCTRL(E) 154 IO(F) 189 VCCIO(H)
15 IO(A) 50 TDO 85 IO(D) 120 IO(E) 155 PLLOUT(3) 190 IO(H)
16 IO(A) 51 PLLOUT(1) 86 VCC 121 IO(E) 156 GNDPLL(0) 191 IO(H)
17 IO(A) 52 GNDPLL(2) 87 IO(D) 122 VCCIO(E) 157 GND 192 IOCTRL(H)
18 IO(A) 53 GND 88 IO(D) 123 GND 158 VCCPLL(0) 193 IO(H)
19 VCCIO(A) 54 VCCPLL(2) 89 VCC 124 IO(E) 159 PLLRST(0) 194 INREF(H)
20 IO(A) 55 PLLRST(2) 90 IO(D) 125 IO(E) 160 GND 195 VCC
21 GND 56 VCC 91 IO(D) 126 IO(E) 161 IO(G) 196 IOCTRL(H)
22 IO(A) 57 IO(C) 92 IOCTRL(D) 127 CLK(5)
PLLIN(3) 162 VCCIO(G) 197 IO(H)
23 TDI 58 GND 93 INREF(D) 128 CLK(6) 163 IO(G) 198 IO(H)
24 CLK(0) 59 IO(C) 94 IOCTRL(D) 129 VCC 164 IO(G) 199 IO(H)
25 CLK(1) 60 VCCIO(C) 95 IO(D) 130 CLK(7) 165 VCC 200 IO(H)
26 VCC 61 IO(C) 96 IO(D) 131 VCC 166 IO(G) 201 IO(H)
27 CLK(2)
PLLIN(2) 62 IO(C) 97 IO(D) 132 CLK(8) 167 IO(G) 202 IO(H)
28 CLK(3)
PLLIN(1) 63 IO(C) 98 VCCIO(D) 133 TMS 168 IO(G) 203 VCCIO(H)
29 VCC 64 IO(C) 99 IO(D) 134 IO(F) 169 IOCTRL(G) 204 GND
30 CLK(4),
DEDCLK
PLLIN(0)
65 IO(C) 100 IO(D) 135 IO(F) 170 INREF(G) 205 IO(H)
31 IO(B) 66 IO(C) 101 GND 136 IO(F) 171 IOCTRL(G) 206 PLLOUT(2)
32 IO(B) 67 IOCTRL(C) 102 PLLOUT(0) 137 GND 172 IO(G) 207 GND
33 GND 68 INREF(C) 103 GND 138 VCCIO(F) 173 IO(G) 208 GNDPLL(3)
34 VCCIO(B) 69 IOCTRL(C) 104 GNDPLL(1) 139 IO(F) 174 IO(G)
35 IO(B) 70 IO(C) 105 PLLRST(1) 140 IO(F) 175 VCC
8
Table 2: 288-pin Ceramic Quad Flatpack Pinout Table
Pin Function Pin Function Pin Function Pin Function Pin Function Pin Function
1GND 36 CLK(7) 71 VCC 106 IO(G) 141 PLLRST(3) 176 IO(A)
2VCC 37 CLK(8) 72 GND 107 TCK 142 VCCPLL(3) 177 TDI
3PLLRST(1) 38 TMS 73 GND 108 VCC 143 VCC 178 CLK(0)
4VCCPLL(1) 39 IO(F) 74 VCC 109 IO(H) 144 GND 179 CLK(1)
5IO(E) 40 IO(F) 75 GND 110 IO(H) 145 GND 180 CLK(2)
PLLIN(2)
6IO(E) 41 IO(F) 76 PLLRST(0) 111 IO(H) 146 VCC 181 CLK(3)
PLLIN(1)
7IO(E) 42 IO(F) 77 IO(F) 112 IO(H) 147 GND 182 CLK(4),
DEDCIK,
PLLIN(0)
8IO(E) 43 VCC 78 IO(F) 113 IO(H) 148 IO(A) 183 IO(B)
9IO(E) 44 GND 79 IO(F) 114 IO(H) 149 IO(A) 184 IO(B)
10 IO(E) 45 VCCIO(F) 80 IO(G) 115 VCC 150 IO(A) 185 IO(B)
11 IO(E) 46 IO(F) 81 IO(G) 116 GND 151 IO(A) 186 IO(B)
12 IO(E) 47 IO(F) 82 IO(G) 117 VCCIO(H) 152 IO(A) 187 VCC
13 IO(E) 48 IO(F) 83 IO(G) 118 IO(H) 153 IO(A) 188 GND
14 VCC 49 IO(F) 84 IO(G) 119 IO(H) 154 IO(A) 189 VCCIO(B)
15 GND 50 IO(F) 85 IO(G) 120 IO(H) 155 IO(A) 190 IO(B)
16 VCCIO(E) 51 IO(F) 86 VCC 121 IOCTRL(H) 156 IOCTRL(A) 191 IO(B)
17 IOCTRL(E) 52 INREF(F) 87 GND 122 IO(H) 157 INREF(A) 192 IO(B)
18 INREF(E) 53 IOCTRL(F) 88 VCCIO(G) 123 INREF(H) 158 VCC 193 IO(B)
19 IOCTRL(E) 54 IOCTRL(F) 89 IO(G) 124 IOCTRL(H) 159 GND 194 IO(B)
20 IO(E) 55 IO(F) 90 IOCTRL(G) 125 IO(H) 160 VCCIO(A) 195 IOCTRL(B)
21 IO(E) 56 IO(F) 91 INREF(G) 126 IO(H) 161 IOCTRL(A) 196 INREF(B)
22 IO(E) 57 VCCIO(F) 92 IOCTRL(G) 127 IO(H) 162 IO(A) 197 IOCTRL(B)
23 IO(E) 58 GND 93 IO(G) 128 IO(H) 163 IO(A) 198 IO(B)
24 IO(E) 59 VCC 94 IO(G) 129 VCCIO(H) 164 IO(A) 199 IO(B)
25 IO(E) 60 IO(F) 95 IO(G) 130 GND 165 IO(A) 200 IO(B)
26 IO(E) 61 IO(F) 96 IO(G) 131 VCC 166 IO(A) 201 VCCIO(B)
27 IO(E) 62 IO(F) 97 IO(G) 132 IO(H) 167 IO(A) 202 GND
28 VCCIO(E) 63 IO(F) 98 IO(G) 133 IO(H) 168 IO(A) 203 VCC
29 GND 64 IO(F) 99 IO(G) 134 IO(H) 169 IO(A) 204 IO(B)
30 VCC 65 IO(F) 100 VCCIO(G) 135 IO(A) 170 IO(A) 205 IO(B)
31 IO(E) 66 IO(F) 101 GND 136 IO(A) 171 IO(A) 206 IO(B)
32 IO(E) 67 IO(F) 102 VCC 137 IO(A) 172 VCCIO(A) 207 IO(B)
33 IO(E) 68 PLLOUT(3) 103 IO(G) 138 PLLOUT(2) 173 GND 208 IO(B)
34 CLK(5)
PLLIN(3) 69 GNDPLL(0) 104 IO(G) 139 GND 174 VCC 209 IO(B)
35 CLK(6) 70 VCCPLL(0) 105 IO(G) 140 GNDPLL(3) 175 IO(A) 210 IO(B)
9
Pin Function Pin Function Pin Function Pin Function Pin Function Pin Function
211 TDO 224 IO(B) 237 IOCTRL(C) 250 IO(C) 263 IO(D) 276 IO(D)
212 PLLOUT(1) 225 IO(C) 238 INREF(C) 251 IO(C) 264 IO(D) 277 IO(D)
213 GNDPLL(2) 226 IO(C) 239 IOCTRL(C) 252 TRSTB 265 IO(D) 278 IO(D)
214 IO(B) 227 IO(C) 240 IO(C) 253 VCC 266 IO(D) 279 IO(D)
215 VCC 228 IO(C) 241 IO(C) 254 IO(D) 267 IO(D) 280 IO(D)
216 GND 229 IO(C) 242 IO(C) 255 IO(D) 268 IO(D) 281 IO(E)
217 GND 230 VCC 243 IO(C) 256 IO(D) 269 IO(D) 282 IO(E)
218 VCC 231 GND 244 VCCIO(C) 257 IO(D) 270 IOCTRL(D) 283 IO(E)
219 GND 232 VCCIO(C) 245 GND 258 IO(D) 271 INREF(D) 284 PLLOUT(0)
220 VCCPLL(2) 233 IO(C) 246 VCC 259 VCC 272 IOCTRL(D) 285 GND
221 PLLRST(2) 234 IO(C) 247 IO(C) 260 GND 273 VCCIO(D) 286 GNDPLL(1)
222 IO(B) 235 IO(C) 248 IO(C) 261 VCCIO(D) 274 GND 287 VCC
223 IO(B) 236 IO(C) 249 IO(C) 262 IO(D) 275 VCC 288 GND
10
Table 3: 484-pin Ceramic Land Grid Array and Plastic Ball Grid Array Pinout Table
Pin Function Pin Function Pin Function Pin Function Pin Function Pin Function
A1 IO(A) AA14 IO(D) B5 IO(A) C18 IO(G) E9 IO(H) F22 IOCTRL(F)
A2 PLLRST(3) AA15 IO(D) B6 IO(H) C19 IO(F) E10 IO(H) G1 IO(A)
A3 IO(A) AA16 IO(D) B7 IO(H) C20 GNDPLL(0) E11 VCC G2 IO(A)
A4 IO(A) AA17 IO(D) B8 INREF(H) C21 IO(F) E12 IO(G) G3 IO(A)
A5 IO(A) AA18 IO(D) B9 IO(H) C22 IO(F) E13 IO(G) G4 IO(A)
A6 IO(H) AA19 IO(E) B10 IO(H) D1 IO(A) E14 IO(G) G5 IO(A)
A7 IO(H) AA20 GNDPLL(1) B11 IO(H) D2 IO(A) E15 IOCTRL(G) G6 IO(A)
A8 IOCTRL(H) AA21 IO(E) B12 NC D3 IO(A) E16 IO(G) G7 GND
A9 IO(H) AA22 IO(E) B13 NC D4 IO(A) E17 INREF(G) G8 IO(H)
A10 NC AB1 IO(B) B14 NC D5 IO(A) E18 IO(G) G9 IO(H)
A11 IO(H) AB2 GNDPLL(2) B15 IO(G) D6 IO(H) E19 IO(F) G10 IO(H)
A12 TCK AB3 PLLRST(2) B16 IO(G) D7 IO(H) E20 IO(F) G11 IO(G)
A13 IO(G) AB4 IO(B) B17 IO(G) D8 IO(H) E21 IO(F) G12 GND
A14 IO(G) AB5 IO(B) B18 IO(G) D9 IO(H) E22 IO(F) G13 IO(G)
A15 IO(G) AB6 IO(C) B19 PLLRST(0) D10 IO(H) F1 IO(A) G14 IO(G)
A16 IO(G) AB7 IO(C) B20 IO(F) D11 IO(H) F2 INREF(A) G15 IO(G)
A17 IO(G) AB8 IOCTRL(C) B21 IO(F) D12 IO(G) F3 IO(A) G16 GND
A18 IO(G) AB9 IO(C) B22 IO(F) D13 IO(G) F4 IO(A) G17 VCCIO(F)
A19 IO(F) AB10 IO(C) C1 IO(A) D14 IO(G) F5 IO(A) G18 IO(F)
A20 GND AB11 IO(C) C2 IO(A) D15 IOCTRL(G) F6 VCCIO(A) G19 IO(F)
A21 PLLOUT(3) AB12 IO(D) C3 VCCPLL(3) D16 IO(G) F7 VCCIO(H) G20 IO(F)
A22 IO(F) AB13 IO(D) C4 PLLOUT(2) D17 IO(G) F8 IO(H) G21 INREF(F)
AA1 TDO AB14 IO(D) C5 IO(A) D18 IO(F) F9 VCCIO(H) G22 IO(F)
AA2 PLLOUT(1) AB15 IO(D) C6 IO(H) D19 VCCPLL(0) F10 IO(H) H1 IO(A)
AA3 GND AB16 IOCTRL(D) C7 IO(H) D20 IO(F) F11 VCCIO(H) H2 IO(A)
AA4 IO(B) AB17 IO(D) C8 IO(H) D21 IO(F) F12 VCCIO(G) H3 IO(A)
AA5 IO(C) AB18 IO(D) C9 IOCTRL(H) D22 IO(F) F13 IO(G) H4 IO(A)
AA6 IO(C) AB19 IO(E) C10 IO(H) E1 IOCTRL(A) F14 VCCIO(G) H5 IOCTRL(A)
AA7 IO(C) AB20 GND C11 IO(H) E2 IO(A) F15 NC H6 VCCIO(A)
AA8 INREF(C) AB21 VCCPLL(1) C12 IO(H) E3 IO(A) F16 VCCIO(G) H7 IO(H)
AA9 IO(C) AB22 IO(E) C13 IO(G) E4 IO(A) F17 IO(F) H8 GND
AA10 IO(C) B1 IO(A) C14 IO(G) E5 IO(A) F18 IO(F) H9 VCC
AA11 IO(C) B2 GND C15 IO(G) E6 IO(H) F19 IO(F) H10 VCC
AA12 IO(D) B3 GNDPLL(3) C16 IO(G) E7 IO(A) F20 IOCTRL(F) H11 VCC
AA13 IO(D) B4 GND C17 IO(G) E8 IO(H) F21 IO(F) H12 GND
11
PinFunctionPinFunctionPinFunction Pin Function Pin Function Pin Function
H13 VCC K4 IO(A) L17 VCCIO(F) N8 VCC P21 IO(E) T12 IO(C)
H14 VCC K5 IO(A) L18 IO(F) N9 VCC P22 IO(E) T13 IO(D)
H15 GND K6 VCCIO(A) L19 CLK(8) N10 GND R1 IO(B) T14 IO(E)
H16 IO(F) K7 IO(A) L20 IO(F) N11 GND R2 INREF(B) T15 IO(D)
H17 IO(F) K8 VCC L21 IO(F) N12 GND R3 IO(B) T16 GND
H18 IO(F) K9 VCC L22 IO(F) N13 GND R4 IO(B) T17 IO(E)
H19 IO(F) K10 GND M1 IO(B) N14 VCC R5 IO(B) T18 IO(E)
H20 IO(F) K11 GND M2 IO(B) N15 VCC R6 IO(B) T19 IO(E)
H21 IO(F) K12 GND M3 IO(B) N16 IO(E) R7 IO(B) T20 IO(E)
H22 IO(F) K13 GND M4 CLK(3)
PLLIN(1) N17 VCCIO(E) R8 GND T21 IOCTRL(E)
J1 IO(A) K14 VCC M5 IO(B) N18 IO(E) R9 VCC T22 IO(E)
J2 IO(A) K15 VCC M6 VCCIO(B) N19 IO(E) R10 VCC U1 IOCTRL(B)
J3 IO(A) K16 IO(F) M7 CLK(1) N20 IO(E) R11 GND U2 IO(B)
J4 IO(A) K17 IO(F) M8 VCC N21 IO(E) R12 VCC U3 IOCTRL(B)
J5 IO(A) K18 IO(F) M9 VCC N22 IO(E) R13 VCC U4 IO(B)
J6 IO(A) K19 IO(F) M10 GND P1 IO(B) R14 VCC U5 IO(B)
J7 IO(A) K20 IO(F) M11 GND P2 IO(B) R15 GND U6 IO(C)
J8 VCC K21 IO(F) M12 GND P3 IO(B) R16 IO(D) U7 VCCIO(C)
J9 GND K22 IO(F) M13 GND P4 IO(B) R17 VCCIO(E) U8 NC
J10 VCC L1 CLK4,
DEDCLK
PLLIN(0)
M14 GND P5 IO(B) R18 IO(E) U9 VCCIO(C)
J11 VCC L2 CLK(0) M15 GND P6 VCCIO(B) R19 IO(E) U10 IO(C)
J12 GND L3 CLK(2)
PLLIN(2) M16 GND P7 IO(B) R20 IO(E) U11 VCCIO(C)
J13 VCC L4 IO(A) M17 IO(E) P8 VCC R21 IO(E) U12 VCCIO(D)
J14 GND L5 IO(A) M18 IO(E) P9 GND R22 IO(E) U13 IO(D)
J15 VCC L6 IO(A) M19 IO(E) P10 VCC T1 IO(B) U14 VCCIO(D)
J16 IO(F) L7 GND M20 CLK(7) P11 GND T2 IO(B) U15 NC
J17 VCCIO(F) L8 GND M21 CLK(5)
PLLIN(3) P12 VCC T3 IO(B) U16 VCCIO(D)
J18 IO(F) L9 GND M22 TMS P13 VCC T4 IO(B) U17 VCCIO(E)
J19 IO(F) L10 GND N1 IO(B) P14 GND T5 IO(B) U18 IO(E)
J20 IO(F) L11 GND N2 IO(B) P15 VCC T6 VCCIO(B) U19 IO(E)
J21 IO(F) L12 GND N3 IO(B) P16 IO(E) T7 GND U20 IOCTRL(E)
J22 IO(F) L13 GND N4 IO(B) P17 IO(E) T8 IO(C) U21 IO(E)
K1 TDI L14 VCC N5 IO(B) P18 IO(E) T9 IO(B) U22 INREF(E)
K2 IO(A) L15 VCC N6 IO(B) P19 IO(E) T10 TRSTB V1 IO(B)
K3 IO(A) L16 CLK(6) N7 IO(B) P20 IO(E) T11 GND V2 IO(B)
12
Pin Function Pin Function Pin Function Pin Function Pin Function Pin Function
V3 IO(B) V14 IO(D) W3 IO(B) W14 IO(D) Y3 VCCPLL(2) Y14 IO(D)
V4 IO(B) V15 IO(D) W4 IO(B) W15 IO(D) Y4 IO(C) Y15 IOCTRL(D)
V5 IO(B) V16 INREF(D) W5 IO(B) W16 NC Y5 IO(C) Y16 IO(D)
V6 IO(C) V17 IO(D) W6 IO(C) W17 IO(D) Y6 IO(C) Y17 IO(D)
V7 IO(C) V18 IO(E) W7 NC W18 IO(E) Y7 IO(C) Y18 IO(E)
V8 IO(C) V19 IO(E) W8 IO(C) W19 IO(E) Y8 IOCTRL(C) Y19 NU
V9 NC V20 IO(E) W9 IO(C) W20 IO(E) Y9 IO(C) Y20 PLLOUT(0)
V10 IO(C) V21 IO(E) W10 IO(C) W21 IO(E) Y10 IO(C) Y21 PLLRST(1)
V11 IO(C) V22 IO(E) W11 IO(C) W22 IO(E) Y11 IO(D) Y22 IO(E)
V12 VCC W1 IO(B) W12 IO(D) Y1 IO(B) Y12 IO(D)
V13 NC W2 IO(B) W13 IO(D) Y2 IO(B) Y13 IO(D)
13
Table 4: RadHard Eclipse Pin Description
PIN FUNCTION DESCRIPTION
TDI/RSI Test data in for JTAG/ RAM
initialization Serial Data In Hold HIGH during normal operation. Connects to serial PROM
data in for RAM initialization. Co nnect to VCC if unu sed.
TRSTB/RRO Active low reset for JTAG/
RAM initialization reset out Hold LOW during normal operation. Connects to serial PROM
reset for RAM initialization. Connect to GND if unused.
TMS Test mode select for JTAG Hold HIGH during normal operation. Connect to VCC if not
used for JTAG.
TCK Test clock for JTAG Hold HIGH or LOW during normal operation. Connect to VCC
or ground if not used for JTAG.
TDO/RCO Test data out for JTAG/RAM
initialization clock out Connect to serial PROM clock for RAM initialization. Must be
left unconnected if not used for JTAG or RAM initialization.
CLK1Global clock network driver Low skew global clock. This pin provides access to a
programmable clock network.
IO(A) Input/Output Pin The I/O pin is a bi-directional pin, configurable to input and/or
output. The A inside the parenthesis means that the I/O is
located in Bank A.
DEDCLK1Dedicated clock pin Low skew global clock. This pin provides access to a dedicated,
distributed clock network capable of driving the CLOCK inputs
of sequential elements of the device (e.g., RAM and flip-flops).
PLLIN1PLL clock input Clock input for PLL.
VCCPLL1Phase locked loop power
supply pin Voltage supply for PLLIN. VCCPLL should be connected to
2.5V supply if the PLLs are used. If the PLLs are not used,
VCCPLL can be connected GND.
GNDPLL Ground pin for PLL Connect to GND.
PLLRST1Reset input pin for PLL Reset input for PLL. If PLLs are not used, PLLRST should be
connect to the same voltage as VCCPLL (e.g., GND).
PLLOUT2PLL output pin Dedicated PLL output pin. If PLLs are not used, PLLOUT
should be connected to GND.
INREF(A) Differential reference voltage The INREF is the reference voltage pin for GTL+, SSTL2, and
STTL3 standards. The A inside the parenthesis means that
INREF is located in Bank A. This pin should be tied to GND
for LVTTL, LVCMOS3 and PCI inputs.
IOCTRL(A)1Highdrive input This pin provides fast RESET, SET, CLOCK and EN ABLE
access to the I/O cell flip flops, providing fast clock-to-out and
fast I/O response times. This pin can also double as a high-drive
pin to the internal logic cells. The A inside the parenthesis
means that IOCTRL is located in Bank A.
VCC Power supply pin Connect to 2.5V supply.
14
Note: Four PLL inputs are available on the RadHard Eclipse FPGA. These PLL pins are noted and available in the QuickW orks/SpDE place and route tools. Aeroflex
has not completed full performance and radiation characterizations of the PLL circuits at the time of the datasheet release. Therefore, Aeroflex does NOT recommend
use of the PLL inputs at this time. When characterization of the PLL ’s is complete, an application note will be published and posted at www .aeroflex.com/radhardFPGA.
Until that time, Aeroflex recommends disabling the PLL pins as identified in Table 8 of this datasheet.
1. All dedicated inputs including the CLK, DEDCLK, PL LI N, PLLRST, and IOCTRL pins, are clamped to VCC rail, not the VCCIO. Therefor e, the se pi ns can on ly
be driven up to VCC +0.3V. These input pins are LVCMOS2 compliant only (2.5V).
2. All PLLOUT output pins are driven by the VCC rail, not the VCCIO rail. These output pins are LVCMOS2 compliant only (2.5V).
VCCIO(A) Input voltage tolerance pin Co nnect to 3.3V supply. The A inside the paren thesis mean s
that VCCIN is located in Bank A. Every I/O pin in Bank A will
be tolerance of VCCIO input signals and will output VCCIO level
signals.
GND Ground pin Connect to ground.
Table 4: RadHard Eclipse Pin Description
PIN FUNCTION DESCRIPTION
15
ABSOLUTE MAXIMUM RATINGS1
(Referenced to VSS)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operatio n of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Test per MIL-STD-883; Method 101 2.
RECOMMENDED OPERATING CONDITIONS
Notes:
1. T o conclude best and worst case delays, multiply the RadHard K factor from the operating conditions with the delay values defined in the following AC delay tables.
SYMBOL PARAMETER LIMITS
VCC Core supply voltage -0.5 to 3.6V
VCCIO I/O supply voltage -0.5 to 4.6V
INREF I/O reference voltage 2.7V
VIO Voltage on any pin -0.5V to VCCIO +0.5V
ILU Electrical Latchup Immunity +/-100mA
PDPower Dissipation .5 - 2.5W
ΘJC Thermal resistance, junction-to-case25oC/W
TJMaximum junction temperature2+150°C
ESDS ESD pad protection +/-2000V
II DC input current ±10 mA
TLS Lead Temperature 300°C
SYMBOL PARAMETER LIMITS
VCC Core supply vol tage 2.3 to 2.7V
VCCIO I/O Input Tolerance Voltage 3.0 to 3.6V
TA Ambient Temperature -55°C to + 125°C
K1Delay factor for RadHard FPGA 0.42 to 1.92
(speed grade -4)
tINRISE
tINFALL
Maximum input rise or fall time
(VIN transitioning between VIL (max) and VIH (min)) 20ns
16
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-55°C to +125°C) (VCC = 2.5V + 10%)
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Capacitance is sample tested for initial qualification or design changes only. Clock pins are 12pF maximum.
2. Input only or I/O. Duration should not exceed 1 second. Measured at initial qualification, or after any design or process change that may affect this parameter.
Notes:
1. The data provided in Table 5 are JEDEC and PCI specifications. See preceding AC Delay Data for information spec ific to RadHard Eclipse FPGA I/Os.
2. Low current mode for L VCMOS3 outputs.
Notes:
1. Excludes input only signals such as DEDCLK. PROGCLK and IOCTRL.
SYMBOL PARAMETER CONDITION MIN MAX UNIT
IIN Input or I/O leakage current VIN = VCCIO or Gnd -10 10 μA
IOZ Three-state output leakage current VIN= VCCIO or Gnd -10 10 μA
CI1Input capacitance -- - 8 pF
CI/O1Bi-directional capacitance -- - 12 pF
IOS2Short-circuit output current VO = GND
VO = VCCIO
-15
40 -180
210 mA
mA
ICC Quiescent current VIN, VO = VCCIO or GND .50 5 mA
IREF DC supply current on INREF -10 10 μA
IPD Pad Pull-down (programmabl e) VCCIO = 3.6V - 150 μA
Table 5: DC Input and Output Levels1
INREF VIL VIH VOL VOH IOL IOH
VMIN VMAX VMIN VMAX VMIN VMAX VMAX VMIN mA mA
LVTTL n/a n/a -0.3 0.8 2.0 VCCIO + 0.3 0.4 2.4 2.0 -2.0
LVCMOS2 n/a n/a -0.3 0.7 1.7 VCCIO + 0.3 0.7 1.7 2.0 -2.0
LVCMOS3 n/a n/a -0.3 0.8 2.0 VCCIO + 0.3 .55 2.0 24.0 -24 .0
LVCMOS32n/a n/a -0.3 0.8 2.0 VCCIO + 0.3 0 .20 VCCIO -0.2 0.10 -0.10
PCI n/a n/a -0.3 0.3 x VCCIO 0.5 x VCCIO VCCIO + 0.5 0.1 x VCCIO 0.9 x VCCIO 1.5 -0.5
Table 6: Max Bidirectional I/O per Device/Package Combination
Device 208 CQFP 288 CQFP 484 CCGA
RadHard Eclipse FPGA 6325 99 163 310
17
AC CHARACTERISTICS LOGIC CELLS (Pre/Post-Radiation)*
(VCC = 2.5V, TA = 25oC, K=1.00)
Notes: * Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 10 19.
1. Stated timing for typical case propagation delay over process variation at VCC=2.5V and TA=25oC. Multiply by the appropriate delay factor, K, for
voltage and temperature settings as specified in operating range.
2. These limits are derived from a representative selection of the slowest paths through the logic cell including typical net delays. Worst case delay values
for specific paths should be determined from timing analysis of your particular design.
SYMBOL PARAMETER Value (ns)
Min Max
TPD Combinatorial Delay of the longest path: time taken by the
combinatoria l ci rcuit to output 0.205 1.01
TSU Setup Time: time the synchronous input of the flip flop must be
stable before the active clock edge 0.231 --
THL Hold Time: time the synchronous input of the flip flop must be stable
after the active clock edge 0--
TCO Clock to Out Delay: the amount of time taken by the fl ip flop to
output after the active clock edge -0.43
TCWHI Clock High Time: required minimum time the clock stays high 0.46 --
TCWLO Clock Low Time: required minimum that the clock stays low 0.46 --
TSET Set Delay: time between when the flip flop is "set" (high) and when
the output is consequently "set" (high ) -- 0.59
TRESET Reset Delay: time between when the flip flop is "reset" (low) and
when the output is consequently "reset" (low) -- 0.66
TSW Set Width: time that the SET signal remains high/low 0.3 --
TRW Reset Width: time that the RESET signal remains high/low 0.3
18
SET
D
CLK
Q
Figure 6: Logic Cell Flip Flop
RESET
CLK
SET
RESET
tCWHI (MIN) tCWLO (MIN)
tRW
tRESET
tSW
tSET
Figure 7: Logic Cell Flip Flop Timings - First Waveform
CLK
D
D
tSU tHL
tCO
Figure 8: Logic Cell Flip Flop Timings - Second Waveform
Q
19
GLOBAL CLOCK TREE DELAY
(VCC = 2.5V, TA = 25oC, K=1.00)
SYMBOL PARAMETER Value (ns)
Min Max
tPGCK Global clock pin delay to quad net 0.990 1.386
tBGCK Global clock buffer delay (quad net to flip flop) 0.534 1.865
Figure 9: Global Clock Structur e
Quad Net
Programmable Clock
External Clock
Clock
Select
tBGCK
tPGCK
Global Clock Buffer
Figure 10: Global Clock Structur e Schematic
Global Clock
20
RAM CELL SYNCHRONOUS and ASYNCHRONOUS READ TIMING
(VCC = 2.5V, TA = 25oC, K=1.00)
SYMBOL PARAMETER Value (ns)
RAM Cell Synchronous Read Timing Min Max
tSRA RA setup time to RCLK: time the READ ADDRESS must be stable
before the active edge of the READ CLOCK 0.686 --
tHRA RA hold time to RCLK: time the READ ADDRESS must be stable
after the active edge of the READ CLOCK 0--
tSRE RE setup time to RCLK: time the READ ENABLE must be stable
before the active edge of the READ CLOCK 0.243 --
tHRE RE hold time to RCLK: time the READ ENABLE m ust be stable
after the active edge of the READ CLOCK 0--
tRCRD RCLK to RD: time between the activ e READ CLOCK edge and
the time when the data is delivered to RD -- 2.3
RAM Cell Asynchronous Read Timing
tPDRD RA to RD: time between when the READ ADDRESS is input and
when the DATA is output -- 2.4
RCLK
RA
tSRA tHRA
RE
tSRE tHRE
RD
tRCRD
tPDRD
Figure 11: RAM Cell Synchronous and Asynchronous Read Timing
RCLK
new dataold data
21
RAM CELL SYNCHRONOUS WRITE TIMING
(VCC = 2.5V, TA = 25oC, K=1.00)
SYMBOL PARAMETER Value (ns)
Min Max
tSWA WA setup time to WC LK : time the WRITE ADDR ESS must be
stable before the active edge of the WRITE CLOCK 0.675 --
tHWA WA hol d time to WCLK: time the WRITE ADDRESS must be
stable after the active edge of the WRITE CLOCK 0--
tSWD WD setup time to WCLK: time the WRITE DATA must be stable
before the active edge of the WRITE CLOCK 0.654 --
tHWD WD hold time to WCLK: time the WRITE DATA must be stable
after the active edge of the WRITE CLOCK 0--
tSWE WE setup time to WCLK: time the WRITE ENABLE must be stable
before the active edge of the WRITE CLOCK 0.276
tHWE WE hold time to WCLK: time the WRITE ENABLE must be stable
after the active edge of the WRITE CLOCK 0
tWCRD WCLK to RD (WA = RA): time between the active WRITE CLOCK
edge and the time when the data is available at RD -- 2.8
WCLK
WA
WD
WE
RD
tHWA
tSWA
tSWD tHWD
tSWE tHWE
tWCRD
new dataold data
Figure 12: RAM Cell Synchronous Write Timing
22
QED
R
Figur e 13 . Input Register Cell
PAD
tICLK
tISU
tSID
tIN - tINI
-
+
23
INPUT REGISTER CELL
(VCC = 2.5V, TA = 25oC, K=1.00)
STANDARD INPUT DELAYS
(VCC = 2.5V, TA = 25oC, K=1.00)
SYMBOL PARAMETER Value (ns)
Min Max
tISU Input register setup time: time the synchronous input of the pin must
be stable before the active clock edge 3.308 3.526
tIHL Input register hold time: time the synchronous input of the flip-flop
must be stable after the active clock edge 0--
tICO Input register clock to out: time taken by the flip-flop to output after
the active clock edge -- 0.494
tIRST Input register reset delay: time between when the flip-flop is "reset"
(low) and when the output is consequently "reset" (low) -- 0.464
tIESU Input register clock enable setup time: time "enable" must be stable
before the active clock edge 0.830 -
tIEH Input register clock enable hold time: time "enable" must be stable
after the active clock edge 0--
SYMBOL PARAMETER Value (ns)
Min Max
tSID (LVTTL) LVTTL input delay: Low voltage TTL for 3.3V applications - 0.34
tSID (LVCMOS3) LVCMOS3 input delay: Low voltage CMOS for 3.3V applications - 0.42
R
CLK
D
Q
E
tISU tIHL
tICO
tIRST
tIESU tIEH Figure 14. Input Regi ster Timi ng
24
Figure 15. Output Register Cell
PAD
Q
D
25
OUTPUT REGISTER CELL
(VCC = 2.5V, TA = 25oC, K=1.00)
OUTPUT SLEW RATES
(VCC = 2.5V, TA = 25oC, K=1.00, VCCIO = 3.3V)
SYMBOL PARAMETER Value (ns)
Min Max
tOUTLH Output Delay low to hig h (90% of H) - 2.59
tOUTHL Output Delay high to lo w (10 % of L) - 2.16
tPZH Output Delay tri-state to high (90% of H) - 3.06
tPZL Output Delay tri-state to low (10% of L) -- 2.71
tPHZ Output Delay high to tri-state -- 3.44
tPLZ Output Delay low to tri-state -- 3.32
tCOP Clock to out delay (does not include clo ck tree delays) -- 2.67 (fast skew)
9.0 (slow skew)
Fast Slew Slow Slew
Rising Edge 2.8V/ns 1.0V/ns
Falling Edge 2.86V/ns 1.0V/ns
tPHZ
tPZL
tOUTHL
tOUTHL
tPZH
tPLZ
H
L
H
Z
L
H
Z
L
H
L
H
Z
L
H
Z
L
Figure 16. Output Register Cell Timing
26
Power vs Operating Frequency
The basic power equation which best models pow er consum ption is shown below.
PTOTAL = 0.350 + f(0.0031 NLC + 0.0948 NCKBF +0.01 NCLBF + 0.0263 NCKLD + 0.543 N RAM + 0.0035 NINP + 0.0257 NOUTP)
(mW)
Where
• NLC is the total number of logic cells in the desi gn
• NCKBF = # of clock buffers
• NCLBF = # of column clock buffers
• NCKLD = # of loads connected to the column clock buffers
• NRAM = # of RAM blocks
• NINP is the number of input pins
• NOUTP is the number of output pins
Figure 17 exhibits the power consumption in the device. The chip was filled with (300) 8-bit counters, approximately 76% logic cell
utilization.
2.5
2
1.5
1
.5
0
0 20 40 60 80 100 120 140
Power vs Frequency (Counter_300)
Frequency (Mhz)
Figure 17: Power Consumption
Power (W)
27
Power-Up Sequencing
Notes:
1. VCC and VCCIO should either be ramped simultaneously to their final values (as shown) or with the core voltage VCC
leading the I/O voltage VCCIO.
2. Rise time for the voltage supplies (tRVCC) must be within the range of 1μs < tRVCC <200ms.
3. Voltage power up/power down ramps for the supp lies must be monotonically increasing/decreasing.
4. The starting point for power up (VCCOFFSET) must be less than or equal to 300mV.
5. Users must allow time for the asynchronous power on reset to complete initialization of the device (tPOR). For fast rise
times, (tRVCC <10msec) a minimum tPOR =10 msec must be allowed. For slower rise times, 10ms <tRUCE <200ms, a min-
imum tPOR=tRVCC must be allowed.
VCCIO
VCC
tRVCC
Figure 18. Power-Up Requirements/Recommendations
Voltage
VCCOFFSET
tPOR
Time
28
Joint Test Access Group (JTAG)
Microprocessors and Application Specific Integrated Circuits (ASICs) pose many design challenges, not in the least of which con-
cerns the accessibility of test points. The Joint Test Access Group (JTAG) formed in response to this challenge, resulting in IEEE
standard 1149.1, the Standard Test Access Port and Boundary Scan Architecture.
The JTAG boundary scan test methodolo gy allows complete observation and control of the boundary pi ns of a JTAG-compatible
device through JTAG software. A Test Access Port (TAP) controller works in concert with the Instruction Register (IR), which allow
users to run three required tests along with several user-defined tests.
JTAG tests allow users to reduce system debug time, reuse test platforms and tools, and reuse subsystem tests for fuller verification
of higher level system elements.
The 1149.1 standard requires the follo wing three tests:
• Extest Instruction: The Extest instruction performs a PCB interconnect test. This test places a device into an external boundary
test mode, selecting the boundary scan register to be connected between the TAP’s Test Data In (TDI) and Test Data Out (TDO)
pins. Boundary scan cells are preloaded with test patters (via the Sample/Preload Instruction), and input boundary cells capture the
input data for analysis.
• Sample/Pr eload Instruction: This instruction allows a device to remain in its functional mode, while selecting the boundary scan
register to be connected between the TDI and TDO pins. For this test, the boundary scan register can be accessed via a data scan
operation, allowing users to sample the functional data entering and leaving the device.
TAp Controller
State Machine
(16 States) Instruction Decode
&
Control Logic
TCK
TMS
TRSTB
Mux TDO
Instruction Register
Boundary-Scan
Register (Data Register)
Bypass
Register
Mux
RDI
I/O Registers
Internal
Register
User Defined Data Register
Figure 19. JTAG Block Diagram
29
• Bypass Instruction: The Bypass instruction allows data to skip a device’s boundary scan entirely, so the data passes
through the bypass register. The Bypass instruction allows users to test a device witho ut passing through other devices.
The bypass register is connected between the TDI and TDO p ins, allowing serial data to be transferred through a device
without affecting the operation of the device.
Recommended Unused Pin Terminations for the RadHard Eclipse FPGA Devices
All unused, general purpose I/O pins can be tied to VCC, GND, or HIZ (high impedance) internally using the Configuration
editor. This option is given in the bottom-right corner of the placement window. To use the Placement Editor, choose Con-
straint ->Fix Placement in the Option pull-down menu of SpDE. The rest of the pins should be terminated at the board
level in the manner presented in Table 8.
Table 7: JTAG Pin Descriptions
Pin Function Description
TDI/RSI Test Data In for JTAG/RAM init. Serial Data In Hold HIGH during normal operation. Connects to serial
PROM data in for RAM initialization. Connect to VCC if
unused.
TRSTB/RRO Active low Reset for JTAG/RAM init. reset out Hold LOW during normal operation. Connects to serial
PROM data in for RAM initialization. Connect to GND
if unused.
TMS Test Mode Select for JTAG Hold HIGH during normal operation. Connect to VCC if
not used for JTAG.
TCK Test Clock for JTAG Hold HIGH or LOW during normal operatio n. Connect
to VCC or GND if not used for JTAG.
TDO/RCO Test data out for JTAG/RAM init. clock out Connect to serial PROM clock for RAM initialization.
Must be left unconnected if not used for JTAG or RAM
initialization.
30
Note: X---> number, Y ---> alphabetical character
Table 8: Recommended Unused Pin Terminations
Signal Name Recommended Termination
IOCTRL <y> Any unused pins of this type should be connected to either VCC or GND (recommended: GND).
CLK/PLLIN <x> Any unused clock pins should be connected to either VCC or GND (recommended: GND).
INREF <y> If an I/O bank does not require the use of an INREF signal, that INREF pin should be connected
to GND.
VCCPLL <x> If a PLL is not used, the associated VCCPLL must be connected to the sam e vol tage as PLLRST
(2.5V or GND; recommend GND).
PLLRST <x> If a PLL is not used, the associated PLLRST must be connected to the same voltage as VCCPLL
(2.5V or GND; recommend GND).
PLLOUT <x> Unused PLLOUT pins must be connected to either VCC or GND so that the input buffer portion
never floats (recommend GND). Utilized PLLs which route the PLL clock outside of th e chip
require use of the associated PLLOUT pin.
31
PACKAGING
Figure 20. 208-pin Ceramic FLATPACK
1. All exposed metalized areas are gold plated over nickel plating per
MIL-PRF-38535.
2. Lead finishes are in accordance with MIL-PRF-38535.
3. Letter designations are to cross-reference to MIL-STD-1835.
4. Packages may be shipped with repaired leads as shown.
32
1. All exposed metalized areas are gold plated over nickel plating per MIL-PRF-38535.
2. App note: Capacitor monitoring pads are dimensioned for a MIL-C-55581 CDR33 chip capacitor.
3. Lead finishes are in accordance with MIL-PRF-38535.
4. Letter designations are to cross-reference to MIL-STD- 1835.
5. Packages may be shipped with repaired leads as shown. Coplanarity requirements do not apply in repaired area.
6. Seal ring is connected to VSS.
7. Drawing units are in millimeters.
Figure 21. 288-pin Ceramic Quad FLATPACK
33
34
1. Seal ring is connected to VSS.
2. Units are in millimeters (inches).
3. All top sides exposed metalized areas must be gold plated
100 to 225 micro-inches thick and all bottom side exposed
metalized areas must be gold plated to 60 micro-inches thick
nominal. Both sides shall be over electroplated nickel under-
coating 100 to 350 micro-inches per MIL-PRF-38535. The
bottom side plating is not subject to the salt atmosphere re-
quirements of 40-7150-xx.
4. Camber: 0.08MM max.
5. Geometry is vendor optio nal. Cannot be alph anumeric and
must be isolated within the shaded area. Must be electri cally
isolated. Plating is optional.
Figure 23. 484-pin Ceramic Land Grid Array
35
Figure 24. 208-pin Plastic Quad Flat Pack
1. Units are in millimeters.
2. The top package body size may be smaller than the bottom package body size by as
much as 0 .20.
3. Body mold protrusion of 0.25 max per side is allowed.
4. Lead finish is tin-lead plated.
36
Figure 25. 280-pin Plastic Ball Grid Array
1. Units are in millimeters.
2. Dimension measured at maximum solder ball diameter parallel to primary Datum C.
3. Primary Datum C and the seating plane are defined by the spherical cro wns of the solder
balls.
37
Figure 26. 484-pin Plastic Ceramic Land Grid Array
1. Units are in millimeters.
2. Dimension measured at the maximum solder ball diameter
parallel to primary datum C.
3. Primary datum C and the seating plane are defined by the
spherical crowns of the solder balls.
38
ORDERING INFORMATION
UT6325 RadHard FPGA:
UT *****
Device Type:
(6325) = FPGA
Packaging: (NOTE 5)
(W) = 208-pin PQFP Plastic Quad Flatpack
(X) = 208-pin CQFP Ceramic Quad Flatpack
(P) = 280-pin PBGA Plastic Ball Grid Array
(Y) = 288-pin CQFP Ceramic Quad Flatpack
(R) = 484-pin PBGA Plastic Ball Grid Array
(Z) = 484-pin CLGA Ceram ic La n d Grid Array (NOTE 6)
Screening: (NOTES 3 & 4)
(C) = Military Temperature Range flow
(P) = Prototype flow
Lead Finish: (NOTES 1 & 2)
(A) = Hot solder dipped
(C) = Gold
(X) = Factory option (gold, solder, or tinned)
***
Notes:
1. Lead finish (A, C, or X) must be specified.
2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Prototype flow per Aeroflex Manufacturing Flows Document. T ested at 25°C only . Lead finish is FACTORY OPTION "X" only . Radiation
neither tested nor guaranteed.
4. Military Temperature Range flow per Aeroflex Manufacturing Flows Document. Devices are tested at -55°C, room temp, and 125°C.
Radiation neither tested nor guaranteed.
5. Use the following table to determine which lead finishes to select for the corresponding package options.
6. Aeroflex offers COLUMN A TT ACHMENT as an additional service for the ceramic land grid array (Case Outline "Z"). If needed,
please ask for COLUMN ATTACHMENT when submitting your request for quotation.
Package Option Associated Lead Finish Option
(W) 208-PQ FP (A) Hot Solder Dipped
(X) 208-CQFP (A) Hot Solder Dipped / (C) Gold
(P) 280-PBGA (A) Hot Solder Dipped
(Y) 288-CQFP (A) Hot Solder Dipped / (C) Gold
(R) 484-PBGA (A) Hot Solder Dipped
(Z) 484-CLGA (C) Gold
39
UT6325 FPGA: SMD
5962 - 04229 Lead Finish: (NOTES 1 & 2)
(A) = Hot solder dipped
(C) = Gold
(X) = Factory Option (gold or solder)
Case Outline:
(X) = 208-pin CQFP Ceramic Quad Flatpack
(Y) = 288-pin CQFP Ceramic Quad Flatpack
(Z) = 484-pin CLGA Ceramic Land Grid Array (NOTE 3)
Class Designator: (NOTE 4)
(Q) = QML Class Q
(V) = QML Class V
Device Type (NOTE 5)
01 = UT6325 Military Temperature Range
02 = No Longer Available. Contact Factory
03 = UT6325 assembled to Aeroflex’s Q+ flow
Drawing Number: 04229
Total Dose: (NOTE 6)
(R) = 1E5 (100 krad)(Si))
(F) = 3E5 (300 krad)(Si))
Federal Stock Class Designator: No options
** ***
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Aeroflex offers COLUMN ATTACHMENT as an additional service for the ceramic land grid array (Case Outline "Z"). If needed, please ask for
COLUMN ATTACHMENT when submitting your request for quotation.
4. Product offered to an approved QML-V flo w is no t currently available through the SMD. If you require product that is assembled to Aeroflex’s standard
QML-V flow, you should order device type 03.
5. Aeroflex’s Q+ assembly flow, as defined in section 4.2.2.d of the SMD, provides QML-Q product through that SMD that is manufactured with Aeroflex’s
standard QML-V flow.
6. Total dose radiation must be specified when ordering. QML Q not available without radiation hardening.
40
COLORADO
Toll Free: 800-645-8862
Fax: 719-594-8468
SE AND MID-ATLANTIC
Tel: 321-951-4164
Fax: 321-951-4254
INTERNATIONAL
Tel: 805-778-9229
Fax: 805-778-1980
WEST COAST
Tel: 949-362-2260
Fax: 949-362-2266
NORTHEAST
Tel: 603-888-3975
Fax: 603-888-4585
CENTRAL
Tel: 719-594-8017
Fax: 719-594-8468
www.aeroflex.com info-ams@aeroflex.com
Our passion for perform a nce is defined by three
attributes represented by the s e three icons:
solution-minde d, perform an c e-d riven and custom e r-focu sed
Aeroflex Colorado Springs, Inc. reserves the right to make
changes to any products and services herein at any time
without notice. Consult Aeroflex or an authorized sales
representative to verify that the information in this data sheet
is current before using this product. Aeroflex does not assume
any responsibility or liability arising out of the application or
use of any product or service described herein, except as
expressly agreed to in writing by Aeroflex; nor does the
purchase, lease, or use of a product or service from Aeroflex
convey a license under any patent rights, copyrights,
trademark rights, or any other of the intellectual rights of
Aeroflex or of third parties.
Aeroflex Colorado Springs - Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototype
Datasheet - Shipping QML & Reduced Hi-Rel