PESD5V0U2BT Ultra low capacitance bidirectional double ESD protection diode Rev. 01 -- 27 March 2007 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD. 1.2 Features n Bidirectional ESD protection of two lines n Ultra low leakage current: IRM = 5 nA n Ultra low diode capacitance: Cd = 2.9 pF n ESD protection of up to 10 kV n IEC 61000-4-2; level 4 (ESD) 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n 10/100/1000 Ethernet n Local Area Network (LAN) equipment n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection n FireWire n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V f = 1 MHz; VR = 0 V - 2.9 3.5 pF Per diode VRWM reverse standoff voltage Cd diode capacitance PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 common cathode Simplified outline 3 1 Symbol 1 2 3 2 006aaa155 3. Ordering information Table 3. Ordering information Type number PESD5V0U2BT Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PESD5V0U2BT 1U* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 2 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 C Tamb ambient temperature -65 +150 C Tstg storage temperature -65 +150 C Min Max Unit - 10 kV - 8 kV Table 6. Symbol ESD maximum ratings Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Per diode VESD [1][2] MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to pin 2. Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 100 % 90 % 10 % tr = 0.7 ns to 1 ns t 30 ns 60 ns Fig 1. ESD pulse waveform according to IEC 61000-4-2 PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 3 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VRWM = 5 V - 5 100 nA VBR breakdown voltage IR = 5 mA 5.5 7 9.5 V Cd diode capacitance f = 1 MHz VR = 0 V - 2.9 3.5 pF VR = 5 V - 1.9 - pF - - 100 differential resistance rdif IR = 1 mA 006aab036 3.0 IPP Cd (pF) 2.6 -VCL -VBR -VRWM IR IRM -IRM -IR VRWM VBR VCL 2.2 - 1.8 0 1 2 3 4 + -IPP 5 VR (V) 006aaa676 f = 1 MHz; Tamb = 25 C Fig 2. Diode capacitance as a function of reverse voltage; typical values Fig 3. V-I characteristics for a bidirectional ESD protection diode PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 4 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode ESD TESTER 450 RZ RG 223/U 50 coax 4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR 50 CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 DUT (DEVICE UNDER TEST) vertical scale = 10 A/div horizontal scale = 15 ns/div vertical scale = 10 V/div horizontal scale = 100 ns/div GND GND unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 vertical scale = 10 A/div horizontal scale = 15 ns/div GND GND vertical scale = 10 V/div horizontal scale = 100 ns/div unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) pin 1 to 2 006aab037 Fig 4. ESD clamping test setup and waveforms PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 5 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 7. Application information The PESD5V0U2BT is designed for the bidirectional protection of two signal lines from the damage caused by ESD pulses. The PESD5V0U2BT may be used on lines where the signal polarities are either positive or negative with respect to ground. line 1 to be protected line 2 to be protected PESD5V0U2BT GND 006aab039 Fig 5. Bidirectional protection of two lines Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD5V0U2BT as close to the input terminal or connector as possible. 2. The path length between the PESD5V0U2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 6 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 6. Package outline SOT23 (TO-236AB) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD5V0U2BT [1] Package SOT23 Description 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 13. PESD5V0U2BT_1 Product data sheet Packing quantity (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 7 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 10. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.85 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 7. Reflow soldering footprint SOT23 (TO-236AB) 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 8. Wave soldering footprint SOT23 (TO-236AB) PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 8 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0U2BT_1 20070327 Product data sheet - - PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 9 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PESD5V0U2BT_1 Product data sheet (c) NXP B.V. 2007. All rights reserved. Rev. 01 -- 27 March 2007 10 of 11 PESD5V0U2BT NXP Semiconductors Ultra low capacitance bidirectional double ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 March 2007 Document identifier: PESD5V0U2BT_1