SMBJ13A100 Transient Voltage Suppressor SMBJ13A100 Features * * * * * * Glass passivated junction. 600W Peak Pulse Power capability on 10/1000 s waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 A above 10V. Top Marking LG. SMB/DO-214AA COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND ON BIDIRECTIONAL DEVICES. DEVICES FOR BIPOLAR APPLICATIONS - Bidirectional types use CA suffix. - Electrical Characteristics apply in both directions. 600 Watt Transient Voltage Suppressor Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter PPPM Peak Pulse Power Dissipation on 10/1000 s waveform IPPM Peak Pulse Current on 10/1000 s waveform IFSM Tstg Non-repetitive Peak Forward Surge Current superimposed on rated load (JEDEC method) Storage Temperature Range TJ Operating Junction Temperature Value Units minimum 600 W see table A 100 A -55 to +150 C + 150 C (Note 1) *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum. Electrical Characteristics Uni-directional Device TA = 25C unless otherwise noted Part Marking* Reverse Stand-off Voltage VRWM (V) LG. 13 SMCJ13A100 Breakdown Voltage V BR (V) min 14.4 Test Current IT (mA) Clamping Voltage @IPPM VC (V) Peak Pulse Current IPPM (A) Reverse Leakage @ V RWM IR (nA)** 1 21.5 27.9 100 max 15.9 * Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. ** For bidirectional parts with VRWM<10V, the IR max limit is doubled. 2002 Fairchild Semiconductor Corporation SMBJ13A100, Rev. A (continued) Typical Characteristics Pulse Derating Curve Peak Pulse Power Rating Curve 100 PULSE POWER (%) PULSE POWER (kW) 100 TA = 25 C 10 1 75 50 25 0 0.1 0.0001 0.001 0.01 0.1 PULSE WIDTH (ms) 1 10 0 25 Pulse Waveform sec tf = 10 Peak Value Ippm 100 200 Junction Capacitance T A = 25 C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of Ipp T A = 25 C f = 1.0 MHz Visg = 50m Vp-p 2000 Half Value-Ipp 2 sec Waveform 10/1000 as Defined by R.E.A. 50 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) 6000 4000 CAPACITANCE (pF) 150 Measured at Zero Bias 1000 500 Measured at Stand-Off Voltage (V mw) 200 100 50 e-kt 20 td 0 0 1 2 TIME (ms) 3 4 10 1 5 10 50 REVERSE VOLTAGE (V) 100 200 Non-Repetitive Surge Current 200 FORWARD SURGE CURRENT (A) PEAK PULSE CURRENT (%) SMBJ13A100 Transient Voltage Suppressor T A = T Amax 8.3ms Single Half Sine-Wave JEDEC Method 100 50 20 10 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 SMBJ13A100, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5