Preliminary Technical Information IXYX25N250CV1 IXYX25N250CV1HV High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = 2500V 25A 4.0V 246ns PLUS247 (IXYX) Symbol Test Conditions VCES VCGR TJ = 25C to 175C TJ = 25C to 175C, RGE = 1M Maximum Ratings VGES VGEM 2500 2500 V V Continuous Transient 20 30 V V IC25 IC110 IF110 ICM TC TC TC TC 95 25 30 235 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150C, RG = 5 Clamped Inductive Load ICM = 100 1500 A V PC TC = 25C 937 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 20..120 /4.5..27 N/lb 6 g = 25C = 110C = 110C = 25C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force Weight G G IC = 250A, VGE = 0V VGE(th) IC ICES VCE = VCES, VGE = 0V 2500 = 250A, VCE = VGE TJ = 100C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 25A, VGE = 15V, Note 1 TJ = 150C 3.4 4.7 5.0 V 25 A A 100 nA 4.0 V V 100 Tab E = Emitter Tab = Collector High Voltage Packages High Blocking Voltage High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications (c) 2017 IXYS CORPORATION, All Rights Reserved C Advantages V 3.0 Tab Features BVCES E G = Gate C = Collector Characteristic Values Min. Typ. Max. E TO-247PLUS-HV (IXYX...HV) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100735B(4/17) IXYX25N250CV1 IXYX25N250CV1HV Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 25A, VCE = 10V, Note 1 16 RGi Gate Input Resistance Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 25A, VGE = 15V, VCE = 0.5 * VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25C IC = 25A, VGE = 15V VCE = 0.5 * VCES, RG = 5 Note 2 Inductive load, TJ = 150C IC = 25A, VGE = 15V VCE = 0.5 * VCES, RG = 5 Note 2 RthJC RthCS 27 S 2.8 3060 166 43 pF pF pF 147 16 68 nC nC nC 15 34 8.3 230 246 7.3 ns ns mJ ns ns mJ 18 33 11.0 225 350 10.5 ns ns mJ ns ns mJ 0.15 0.16 C/W C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 25A, VGE = 0V, Note 1 TJ = 150C 3.1 V V IRM IF = 25A, VGE = 0V, TJ = 150C -diF/dt = 500A/sVR = 1200V 38 A 185 ns trr 3.5 RthJC Notes: 0.32 C/W 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYX25N250CV1 IXYX25N250CV1HV o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 50 250 VGE = 25V 19V 15V 13V 11V 200 13V 9V I C - Amperes I C - Amperes 40 VGE = 25V 19V 15V 30 20 7V 10 150 11V 100 9V 50 7V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 50 2.2 VGE = 25V 19V 15V 13V 11V 30 VGE = 15V 2.0 1.8 9V VCE(sat) - Normalized I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 40 20 VCE - Volts VCE - Volts 30 7V 20 I C = 50A 1.6 1.4 I C = 25A 1.2 1.0 I C = 12.5A 0.8 10 0.6 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 90 o TJ = 25 C 80 6 70 I C - Amperes VCE - Volts 60 5 I C = 50A 4 50 40 30 25A o TJ = 150 C o 25 C 20 3 o - 40 C 10 12.5A 0 2 5 7 9 11 13 15 17 19 VGE - Volts (c) 2017 IXYS CORPORATION, All Rights Reserved 21 23 25 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXYX25N250CV1 IXYX25N250CV1HV Fig. 7. Transconductance 44 Fig. 8. Gate Charge 16 o TJ = - 40 C 40 VCE = 1250V 14 I C = 25A 36 28 o 150 C 24 I G = 10mA 12 o 25 C V GE - Volts g f s - Siemens 32 20 16 12 10 8 6 4 8 2 4 0 0 0 10 20 30 40 50 60 70 80 90 0 20 40 I C - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 120 80 1,000 I C - Amperes Capacitance - PicoFarads 100 Cies C oes 100 60 40 o TJ = 150 C 20 RG = 5 dv / dt < 10V / ns Cres f = 1 MHz 0 10 0 5 10 15 20 25 30 35 100 40 400 700 1000 1600 1900 2200 2500 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 25s 10 Z (th)JC - K / W I D - Amperes 1300 VCE - Volts VCE - Volts 100s 1ms 1 0.1 0.01 10ms o 0.1 TJ = 175 C DC o TC = 25 C Single Pulse 100ms 0.01 1 10 100 1000 10000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYX25N250CV1 IXYX25N250CV1HV Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 26 Eoff 24 32 Eon Eoff o TJ = 150 C , VGE = 15V 22 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 20 28 I C = 50A 14 20 10 16 o TJ = 150 C 16 16 12 12 o TJ = 25 C 8 8 E on - MilliJoules 24 E off - MilliJoules VCE = 1250V E on - MilliJoules E off - MilliJoules 20 RG = 5VGE = 15V VCE = 1250V 18 24 Eon I C = 25A 6 2 5 10 15 20 25 30 35 40 45 50 12 4 8 0 4 0 10 55 15 20 25 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eon 10 12 I C = 25A 6 8 2 100 4 150 125 td(off) 900 350 750 300 600 I C = 25A 250 I C = 50A 200 300 150 150 100 0 5 10 15 20 tfi td(off) 500 RG = 5, VGE = 15V t f i - Nanoseconds 400 o TJ = 150 C 300 300 200 200 o TJ = 25 C 100 0 0 15 20 25 30 35 35 40 45 50 55 40 I C - Amperes (c) 2017 IXYS CORPORATION, All Rights Reserved 45 50 td(off) 300 VCE = 1250V 300 250 I C = 25A 220 350 200 I C = 50A 140 150 60 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 400 10 30 RG = 5, VGE = 15V 380 t d(off) - Nanoseconds VCE = 1250V 100 25 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 460 600 t f i - Nanoseconds tfi 450 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 500 1050 VCE = 1250V TJ - Degrees Centigrade 600 1200 t d(off) - Nanoseconds 20 16 75 50 o 400 I C = 50A 14 50 45 TJ = 150 C, VGE = 15V Eon - MilliJoules E off - MilliJoules VCE = 1250V 25 tfi 450 24 RG = 5VGE = 15V 18 40 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 500 28 t f i - Nanoseconds Eoff 22 35 I C - Amperes RG - Ohms 26 30 IXYX25N250CV1 IXYX25N250CV1HV Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) 80 40 I C = 25A I C = 50A 60 30 40 20 20 10 td(on) 60 22 50 10 15 20 25 30 35 40 45 50 40 18 30 16 o tri 24 22 80 20 I C = 50A 60 18 40 16 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 1250V I C = 25A 20 14 0 50 75 10 10 td(on) RG = 5, VGE = 15V 25 12 15 20 25 30 35 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 100 14 TJ = 25 C 0 55 RG - Ohms 120 20 o TJ = 150 C 10 0 5 24 VCE = 1250V 20 0 26 100 125 12 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 40 45 50 t d(on) - Nanoseconds 50 28 RG = 5, VGE = 15V 70 VCE = 1250V 100 tri 80 60 o TJ = 150 C, VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds 120 90 70 t r i - Nanoseconds 140 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXYX25N250CV1 IXYX25N250CV1HV Fig. 22. Diode Forward Characteristics Fig. 23. Reverse Recovery Charge vs. -diF/dt 140 8 120 7 o 100 TJ = 150 C IF = 50A VR = 1200V 6 o QRR (C) I F (A) TJ = 25 C 80 o TJ = 150 C 60 5 25A 4 40 3 20 2 0 12.5A 1 0 1 2 3 4 5 6 7 8 200 400 600 800 1000 1200 1400 -diF/ dt (A/s) VF (V) Fig. 24. Reverse Recovery Current vs. -diF/dt Fig. 25. Reverse Recovery Time vs. -diF/dt 320 80 o TJ = 150 C 70 o IF = 50A VR = 1200V TJ = 150 C 280 VR = 1200V IF = 50A 240 25A 50 tRR (ns) I RR (A) 60 12.5A 40 160 30 120 20 25A 200 12.5A 80 200 400 1.1 600 800 1000 1200 1400 200 400 600 800 1000 1200 diF/dt (A/s) -diF/dt (A/s) Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 27. Maximum Transient Thermal Impedance (Diode) 1 1400 VR = 1200V IF = 25A -diF/dt = 500A/s Z(th)JC - K / W KF 1.0 0.9 0.1 KF QRR 0.8 KF IRR 0.7 0 20 40 60 80 100 TJ (C) (c) 2017 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXY_25N250CV1HV(7T-AT628) 4-17-17-B IXYX25N250CV1 IXYX25N250CV1HV PLUS 247TM Outline A TO-247PLUS-HV Outline E A2 Q E1 E R D2 R D1 D 1 2 3 1 2 D2 L1 D3 A3 2X A1 b 3 PLCS b4 b2 2 PLCS E1 4 3 L A1 A D1 D 4 L1 C A2 Q e 2 PLCS 1 - Gate 2,4 - Emitter 3 - Collector IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. e e1 c E2 E3 4X b 3X 1 - Gate 2,4 - Emitter 3 - Collector 3X b1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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