© 2017 IXYS CORPORATION, All Rights Reserved
High Voltage
XPTTM IGBT
w/ Diode
IXYX25N250CV1
IXYX25N250CV1HV
VCES = 2500V
IC110 = 25A
VCE(sat) 


4.0V
tfi(typ) = 246ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 2500 V
VCGR TJ = 25°C to 175°C, RGE = 1M 2500 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 95 A
IC110 TC = 110°C 25 A
IF110 TC = 110°C 30 A
ICM TC = 25°C, 1ms 235 A
SSOA VGE = 15V, TVJ = 150°C, RG = 5 ICM = 100 A
(RBSOA) Clamped Inductive Load 1500 V
PCTC = 25°C 937 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force 20..120 /4.5..27 N/lb
Weight 6 g
DS100735B(4/17)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 2500 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 μA
TJ = 100°C 100 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 25A, VGE = 15V, Note 1 3.4 4.0 V
TJ = 150°C 4.7 V
Features
High Voltage Packages
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
Preliminary Technical Information
TO-247PLUS-HV
(IXYX...HV)
GE
G = Gate E = Emitter
C = Collector Tab = Collector
PLUS247 (IXYX)
Tab
GCE
Tab
C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX25N250CV1
IXYX25N250CV1HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 25A, VGE = 0V, Note 1 3.5 V
TJ = 150°C 3.1 V
IRM 38 A
trr 185 ns
RthJC 0.32 °C/W
IF = 25A, VGE = 0V, TJ = 150°C
-diF/dt = 500A/sVR = 1200V
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 25A, VCE = 10V, Note 1 16 27 S
RGi Gate Input Resistance 2.8
Cies 3060 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 166 pF
Cres 43 pF
Qg(on) 147 nC
Qge IC = 25A, VGE = 15V, VCE = 0.5 • VCES 16 nC
Qgc 68 nC
td(on) 15 ns
tri 34 ns
Eon 8.3 mJ
td(off) 230 ns
tfi 246 ns
Eoff 7.3 mJ
td(on) 18 ns
tri 33 ns
Eon 11.0 mJ
td(off) 225 ns
tfi 350 ns
Eoff 10.5 mJ
RthJC 0.16 °C/W
RthCS 0.15 °C/W
Inductive load, TJ = 150°C
IC = 25A, VGE = 15V
VCE = 0.5 • VCES, RG = 5
Note 2
Inductive load, TJ = 25°C
IC = 25A, VGE = 15V
VCE = 0.5 • VCES, RG = 5
Note 2
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All Rights Reserved
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
00.511.522.533.544.555.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
5V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
19V
15V
5V
11V
7V
9V
13V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
10
20
30
40
50
012345678
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
9V
5V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 25A
I
C
= 12.5A
I
C
= 50A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
2
3
4
5
6
7
5 7 9 11 13 15 17 19 21 23 25
V
GE
- Volts
V
CE
- Volts
I
C
= 50A
T
J
= 25
o
C
25A
12.5A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
36
40
44
0 102030405060708090
I
C
- Amperes
g
f s
-
Siemens
150oC
25oC
T
J
= - 40oC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
100 400 700 1000 1300 1600 1900 2200 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 150oC
R
G
= 5
Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1250V
I
C
= 25A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
Fig. 11. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
DS
- Volts
I
D
- Amperes
T
J
= 175oC
T
C
= 25oC
Sin
g
le Pulse
1ms
10ms
V
CE(sat)
Limi
t
DC
100μs
25μs
100ms
© 2017 IXYS CORPORATION, All Rights Reserved
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2
6
10
14
18
22
26
5 10152025303540455055
R
G
- Ohms
E
off
- MilliJoules
8
12
16
20
24
28
32
E
on
- MilliJoules
E
off
E
on
T
J
= 150
o
C , V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
Fig. 16. Inductiv e Turn-off Switching Times vs.
Gate Resistance
100
150
200
250
300
350
400
450
500
5 10152025303540455055
R
G
- Ohms
t
f i
- Nanoseconds
0
150
300
450
600
750
900
1050
1200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 1250V
I
C
= 50AI
C
= 25A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0
4
8
12
16
20
24
10 15 20 25 30 35 40 45 50
I
C
- Amperes
E
off
- MilliJoules
0
4
8
12
16
20
24
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2
6
10
14
18
22
26
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
4
8
12
16
20
24
28
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
0
100
200
300
400
500
600
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
60
140
220
300
380
460
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
150
200
250
300
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
12
14
16
18
20
22
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
5 10152025303540455055
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
70
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
© 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: IXY_25N250CV1HV(7T-AT628) 4-17-17-B
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 27. Maximum Transient Thermal Impedance
(Diode)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 22. Diode Forward Characteristics
0
20
40
60
80
100
120
140
012345678
V
F
(V)
I
F
(A)
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 23. Reverse Recovery Charge vs. -di
F
/dt
1
2
3
4
5
6
7
8
200 400 600 800 1000 1200 1400
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 50A
12.5A
25A
T
J
= 150
o
C
V
R
= 1200V
Fig. 24. Reverse Recovery Current vs. -di
F
/dt
20
30
40
50
60
70
80
200 400 600 800 1000 1200 1400
diF/dt (A/μs)
I
RR
(A)
12.5A
25A
I
F
= 50A
T
J
= 150
o
C
V
R
= 1200V
Fig. 25. Reverse Recovery Time vs. -di
F
/dt
80
120
160
200
240
280
320
200 400 600 800 1000 1200 1400
-di
F
/dt (A/μs)
t
RR
(ns)
12.5A
25A
I
F
= 50A
T
J
= 150
o
C
V
R
= 1200V
Fig. 26. Dynamic Parameters Q
RR, IRR
vs.
Junction Temperature
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
TJ
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 25A
-diF/dt = 500A/μs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX25N250CV1
IXYX25N250CV1HV
PLUS 247TM Outline
e
1 2 3 4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS 2 PLCS
b4
1 - Gate 2,4 - Emitter
3 - Collector
TO-247PLUS-HV Outline
1 - Gate
2,4 - Emitter
3 - Collector
AE1
D1
D2
E2
RE
A2
A1
2X
A3
L1
D3
b
ec
D
e1
E3
Q
b1
3X
4X
3X
1 2 3 4
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