ON Semiconductor NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general-purpose amplifier and low frequency switching applications. * High DC Current Gain -- Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP TIP145 TIP146 * TIP147 * * Collector-Emitter Sustaining Voltage -- @ 30 mA * VCEO(sus) = 60 Vdc (Min) -- TIP140, TIP145 80 Vdc (Min) -- TIP141, TIP146 100 Vdc (Min) -- TIP142, TIP147 Monolithic Construction with Built-In Base-Emitter Shunt Resistor IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIII IIII IIIIIIIII III III IIII IIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Symbol TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 Unit VCEO 60 80 100 Vdc Collector-Base Voltage VCB 60 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 10 15 Adc Rating Collector-Emitter Voltage Collector Current -- Continuous Peak (1) Base Current -- Continuous IB 0.5 Adc Total Device Dissipation @ TC = 25C PD 125 Watts TJ, Tstg -65 to +150 C Operating and Storage Junction Temperature Range *ON Semiconductor Preferred Device 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 125 WATTS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 1.0 C/W Thermal Resistance, Case to Ambient RJA 35.7 C/W CASE 340D-02 (1) 5 ms, 10% Duty Cycle. DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 COLLECTOR BASE COLLECTOR BASE 8.0 k 40 8.0 k EMITTER 40 EMITTER Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 January, 2002 - Rev. 4 1 Publication Order Number: TIP140/D TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 60 80 100 -- -- -- -- -- -- -- -- -- -- -- -- 2.0 2.0 2.0 -- -- -- -- -- -- 1.0 1.0 1.0 -- -- 20 1000 500 -- -- -- -- -- -- -- -- 2.0 3.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Vdc ICEO mA ICBO Emitter Cutoff Current (VBE = 5.0 V) mA IEBO mA ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) VBE(sat) -- -- 3.5 Vdc Base-Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VBE(on) -- -- 3.0 Vdc td -- 0.15 -- s tr -- 0.55 -- s ts -- 2.5 -- s tf -- 2.5 -- s SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time Storage Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA mA, Duty Cycle 2 2.0%, 0% IB1 = IB2, RC & RB Varied, TJ = 25C) 25 C) Fall Time (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ts SCOPE RB 51 0 V1 appox. -8.0 V D1 8.0 k PNP NPN 5.0 t, TIME (s) RC TUT V2 approx +12 V 10 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 40 2.0 tf 1.0 tr 0.5 +4.0 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% td @ VBE(off) = 0 0.2 for td and tr, D1 is disconnected and V2 = 0 0.1 0.2 For NPN test circuit reverse diode and voltage polarities. Figure 1. Switching Times Test Circuit 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times http://onsemi.com 2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TYPICAL CHARACTERISTICS NPN TIP140, TIP141, TIP142 PNP TIP145, TIP146, TIP147 20,000 TJ = 150C TJ = 150C 100C 25C 2000 -55C 1000 500 100C 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 5000 7000 25C 5000 -55C 3000 2000 VCE = 4.0 V 300 0.5 VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 1000 0.5 10 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) Figure 3. DC Current Gain versus Collector Current 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 4.0 3.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 4. Collector-Emitter Saturation Voltage VCE = 4.0 V 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 -75 1.0 A -25 25 75 125 4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 -75 175 VCE = 4.0 V 1.0 A -25 25 75 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Base-Emitter Voltage http://onsemi.com 3 125 175 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 ACTIVE-REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) (mA) 20 10 7.0 5.0 3.0 2.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C 1.0 0.2 TIP140, 145 TIP141, 146 TIP142, 147 30 50 20 15 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 15 10 7.0 5.0 100 mJ 2.0 1.0 100 Figure 6. Active-Region Safe Operating Area INPUT VOLTAGE COLLECTOR CURRENT MPS-U52 INPUT RBB1 TUT 1.5k 50 RBB2 = 100 100 mH VCC = 20 V IC MONITOR VBB2 = 0 VBB1 = 10 V 50 Figure 7. Unclamped Inductive Load VCE MONITOR 50 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) RS = 0.1 w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0 1.42 A VCE(sat) -20 V COLLECTOR VOLTAGE V(BR)CER TEST CIRCUIT NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities. VOLTAGE AND CURRENT WAVEFORMS Figure 8. Inductive Load http://onsemi.com 4 100 100 70 50 PNP PNP NPN 20 10 7.0 5.0 5.0 VCE = 10 V IC = 1.0 A TJ = 25C PD, POWER DISSIPATION (WATTS) hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 NPN 2.0 1.0 1.0 2.0 3.0 5.0 f, FREQUENCY (MHz) 7.0 10 4.0 3.0 2.0 1.0 0 0 Figure 9. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 40 80 120 160 TA, FREE-AIR TEMPERATURE (C) Figure 10. Free-Air Temperature Power Derating http://onsemi.com 5 200 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 PACKAGE DIMENSIONS CASE 340D-02 ISSUE E C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G http://onsemi.com 6 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 Notes http://onsemi.com 7 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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