IRGP4063D1PbF
IRGP4063D1-EPbF
1 www.irf.com © 2013 International Rectifier June 24, 2013
VCES = 600V
IC = 60A, TC =100°C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 48A
G C E
Gate Collector Emitter
E
G
n-channel
C
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4063D1PbF TO-247AC Tube 25 IRGP4063D1PbF
IRGP4063D1-EPbF TO-247AD Tube 25 IRGP4063D1-EPbF
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 100
IC @ TC = 100°C Continuous Collector Current 60
ICM Pulse Collector Current, VGE = 15V 200 A
ILM Clamped Inductive Load Current, VGE = 20V 192
IF @ TC = 25°C Diode Continous Forward Current 30
IF @ TC = 100°C Diode Continous Forward Current 15
IFM Diode Maximum Forward Current 120
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 330 W
PD @ TC = 100°C Maximum Power Dissipation 170
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
G
G
E
C
G
G C
E
IRGP4063D1PbF
IRGP4063D1‐EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.4
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
°C/W
Absolute Maximum Ratings
Applicaons
•IndustrialMotorDrive
•Inverters
•UPS
•Welding
Features Benefits
Low VCE(ON) and switching losses High efficiency in a wide range of applications and
switching frequencies
Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching
performance and higher power capability
Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation
5µs short circuit SOA Enables short circuit protection scheme
Lead-free, RoHS compliant Environmentally friendly
IRGP4063D1PbF/IRGP4063D1-EPbF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V
VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.3 — V/°C
VGE=0V, IC=1mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.65 2.14 V IC = 48A, VGE = 15V, TJ = 25°C
— 2.05 — IC = 48A,VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V
VCE = VGE, IC = 1.4mA
VGE(th)/TJ Threshold Voltage temp. coefficient — -21 — mV/°C
VCE=VGE, IC=1.4mA (25°C-175°C)
gfe Forward Transconductance — 32 — S
VCE = 50V, IC = 48A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 200 VGE = 0V, VCE = 600V
— 850 — VGE = 0V, VCE = 600V,TJ = 175°C
VFM Diode Forward Voltage Drop — 1.9 2.4 V IF = 8A
— 1.2 — IF = 8A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 100 150
nC
IC = 48A
Qge Gate-to-Emitter Charge (turn-on) — 25 40 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 40 60 VCC = 400V
Eon Turn-On Switching Loss — 1.4 2.3
mJ IC = 48A, VCC = 400V, VGE = 15V
RG = 10, L = 485µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 1.1 2.0
Etotal Total Switching Loss — 2.5 4.3
td(on) Turn-On delay time — 60 80
tr Rise time — 50 70 ns
td(off) Turn-Off delay time — 160 185
tf Fall time — 30 50
Eon Turn-On Switching Loss — 2.0 —
IC = 48A, VCC = 400V, VGE=15V
RG=10, L= 485µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 1.5 — mJ
Etotal Total Switching Loss — 3.5 —
td(on) Turn-On delay time — 50 —
tr Rise time — 55 — ns
td(off) Turn-Off delay time — 165 —
tf Fall time — 55 —
Cies Input Capacitance — 2900 — VGE = 0V
Coes Output Capacitance — 200 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
TJ = 175°C, IC = 192A
FULL SQUARE VCC = 480V, Vp ≤ 600V
Rg = 50, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp ≤600V
Rg = 50, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 245 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 80 — ns VCC = 400V, IF = 48A
Irr Peak Reverse Recovery Current — 20 — A VGE = 15V, Rg = 10, L = 485µH
µA
Notes:
VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 50.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
IRGP4063D1PbF/IRGP4063D1-EPbF
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10 100 1000
VCE (V)
1
10
100
1000
IC (A)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
Fig. 3 - Power Dissipation vs.
Case Temperature
0.1 110 100
f , Frequency ( kHz )
20
40
60
80
100
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 167W
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I
Square Wave:
VCC
Diode as specified
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
100
120
IC (A)
Fig. 2 - Maximum DC Collector Current vs.
1 10 100 1000
VCE, Collector-to-Emitter Voltage (V)
0.01
0.1
1
10
100
1000
IC, Collector-to -Emitter Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY V CE(on)
100µsec
DC
Fig. 4 - Forward SOA
TC = 25°C, TJ @ 175°C; VGE =15V
IRGP4063D1PbF/IRGP4063D1-EPbF
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0 2 4 6 8 10
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0 2 4 6 8 10
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
0 2 4 6 8 10
VCE (V)
0
50
100
150
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
0
50
100
150
200
IF (A)
TJ =175°C
TJ = 25°C
TJ = -40°C
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
Fig. 111 - Typical VCE vs. VGE
TJ = 25°C
IRGP4063D1PbF/IRGP4063D1-EPbF
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6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage
(V)
0
50
100
150
200
IC, Collector-to-Emitter Current
(A)
TJ = 25°C
TJ = 175°C
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
020 40 60 80 100 120
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V
020 40 60 80 100 120
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 485µH; VCE = 400V, ICE = 48A; VGE = 15V
0 20 40 60 80 100 120
IC (A)
0
1
2
3
4
5
6
7
Energy (mJ)
EOFF
EON
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 485µH; VCE = 400V, RG = 10; VGE = 15V
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
0 20 40 60 80 100 120
RG ()
1
2
3
4
5
6
Energy (mJ)
EOFF
EON
IRGP4063D1PbF/IRGP4063D1-EPbF
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20 30 40 50 60 70 80 90 100
IF (A)
10
12
14
16
18
20
22
24
26
IRR (A)
RG = 22
RG = 47
RG = 10
RG = 100
020 40 60 80 100 120
RG ()
10
12
14
16
18
20
22
IRR (A)
300 400 500 600 700 800 900 1000 1100
diF /dt (A/µs)
12
14
16
18
20
22
IRR (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
200 400 600 800 1000 1200
diF /dt (A/µs)
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
QRR (nC)
48A
24A
96A
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
020 40 60 80 100 120
IF (A)
0
50
100
150
200
250
300
Energy (µJ)
RG =10
RG = 22
RG = 47
RG = 100
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
8 1012141618
VGE (V)
0
4
8
12
16
20
Time
(µs)
0
200
400
600
800
1000
Current (A)
Tsc
Isc
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
IRGP4063D1PbF/IRGP4063D1-EPbF
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0100 200 300 400 500
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 20 40 60 80 100 120
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
18
VGE, Gate-to-Emitter Voltage (V)
VCES = 400V
VCES = 300V
Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 24 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz Fig. 25 - Typical Gate Charge vs. VGE
ICE = 48A
Ri (°C/W) I (sec)
0.0120 0.000012
0.1158 0.00013
0.1820 0.00379
0.1399 0.02387
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Fig 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) I (sec)
0.1343 0.00009
0.7058 0.00032
1.0181 0.00327
0.5434 0.03079
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
IRGP4063D1PbF/IRGP4063D1-EPbF
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L
Rg
80 V
DUT VCC
+
-
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.6 - BVCES Filter Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Rg
VCC
DUT
R = VCC
ICM
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
DC
4X
DUT
VCC
R
SH
Fig.C.T.3 - S.C. SOA Circuit
IRGP4063D1PbF/IRGP4063D1-EPbF
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Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
-200
0
200
400
600
800
1000
1200
-100
0
100
200
300
400
500
600
-1012345
Ice (A)
Vce (V)
Time (uS)
V
CE
I
CE
-30
-15
0
15
30
45
60
-1.50 -0.50 0.50 1.50 2.50 3.50
I
F
(A)
time (µS)
Peak
I
RR
t
RR
Q
RR
10%
Peak
IRR
-20
0
20
40
60
80
100
120
140
-100
0
100
200
300
400
500
600
700
-2-1012345
ICE (A)
VCE (V)
time(µs)
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
-20
0
20
40
60
80
100
120
-100
0
100
200
300
400
500
600
-3 -2 -1 0 1 2 3 4
ICE (A)
VCE (V)
time (µs)
TEST
CURRENT
90%
I
CE
5% V
CE
10%
I
CE
t
r
Eon Loss
IRGP4063D1PbF/IRGP4063D1-EPbF
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
2x
c
"A"
"A"
E
E2/ 2
Q
E2
2X
L1
L
D
A
e
2x b2 3x b
LEAD TIP
SEE
VIEW "B"
b4
B
A
Ø .010 BA
A2
A1
Ø .010 BA
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010 BA
VI EW: "B"
SECTION: C- C, D-D, E-E
(b, b2, b4)
(c)
BASE META
L
PLATI NG
VI EW: "A" - "A"
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
IRGP4063D1PbF/IRGP4063D1-EPbF
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
ASSEM BLY YEAR 0 = 2000
ASSEM BLED O N W W 35, 2000
IN TH E ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD -E
LOT CO DE 5657
WITH ASSEM BLY PART N UM BER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 57
WEEK 35
LINE H
LO T CO D E
Note: "P" in assem bly line position
indicates "Lead-Free"
IRGP4063D1PbF/IRGP4063D1-EPbF
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Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC N/A
TO-247AD
RoHS Compliant Yes
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
