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©2001 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
HGTG18N120BN Rev. C1
HGTG18N120BN
1200 V NPT IGBT
HGTG18N120BN is based on Non- Punch Thro ugh (NPT) IGBT
designs. The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: UPS, solar inverter, motor
control and power supplies.
Formerly Developmental Type TA49304.
Symbol
Features
• 26 A, 1200 V, TC = 110°C
• Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
• Typical Fall Time . . . . . . . . . . . . . 140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG18N120BND TO-247 18N120BND
NOTE: When ordering, use the entire part number.
TO-247
GCE
Data Sheet August 2014
©2001 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
HGTG18N120BN Rev. C1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Ratings UNIT
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 26 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES ±20 V
Gate to Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD390 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 125 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand T ime (Note 3) at VGE = 15 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8μs
Short Circuit Withstand T ime (Note 3) at VGE = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 μs
CAUTION: Stresses above t hose listed in “Abs olute Maximu m Ratings” may ca use permanent damage to the devi ce. This is a stress only rating and operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 25 A, L = 40μH, TJ = 25oC
3. VCE(PK) = 960 V, TJ = 125oC, RG = 3 Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage BVCES IC = 250 μA, VGE = 0 V 1200 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10 mA, VGE = 0 V 15 - - V
Collector to Emitter Leakage Current ICES VCE = 1200 V TC = 25oC--250μA
TC = 125oC-300-μA
TC = 150oC--4mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 18 A,
VGE = 15 V TC = 25oC - 2.45 2.7 V
TC = 150oC-3.84.2V
Gate to Emitter Threshold Voltage VGE(TH) IC = 150 μA, VCE = VGE 6.0 7.0 - V
Gate to Emitter Leakage Current IGES VGE = ±20 V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15 V,
L = 200 μH, VCE(PK) = 1200 V
100 - - A
Gate to Emitter Plateau Voltage VGEP IC = 18 A, VCE = 600 V - 10.5 - V
On-State Gate Charge QG(ON) IC = 18 A,
VCE = 600 V VGE = 15 V - 165 200 nC
VGE = 20 V - 220 250 nC
Current Turn -On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 18 A
VCE = 960 V
VGE = 15 V
RG = 3 Ω
L = 1 mH
Test Circuit (Figure 18)
-2328ns
Current Rise Time trI -1722ns
Current Turn-Off Delay Time td(OFF)I -170200ns
Current Fall Time tfI -90140ns
Turn-On Energy (Note 5) EON1 -0.81.0mJ
Turn-On Energy (Note 5) EON2 -1.92.4mJ
Turn-Off Energy (Note 3) EOFF -1.82.2mJ
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
HGTG18N120BN Rev. C1
Current Turn -On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = 18 A
VCE = 960 V
VGE = 15 V
RG = 3 Ω
L = 1 mH
Test Circuit (Figure 20)
-2126ns
Current Rise Time trI -1722ns
Current Turn-Off Delay Time td(OFF)I -205240ns
Current Fall Time tfI -140200ns
Turn-On Energy (Note 5) EON1 -0.851.1 mJ
Turn-On Energy (Note 5) EON2 3.7 4.9 mJ
Turn-Off Energy (Note 4) EOFF -2.63.1mJ
Thermal Resistance Junction To Case RθJC --0.32
oC/W
NOTE:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-
Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On los s con ditions are sh ow n for the co nveni ence of the circui t design er . E ON1 is the turn-on loss of the IGBT only. EON2 is the turn-on
loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
60
25 75 100 125 150
40
30
20
10
VGE = 15V
50
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400
80
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
40
600 800400200 1000 1200
0
100
120
60
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200μH
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
HGTG18N120BN Rev. C1
FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. CO LLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, RG = 3Ω, L = 1mH, VCE = 960V
fMAX, OPERATING FREQUENCY (kHz)
5
1
10
4020
50
10
100
30
TC = 75oC, VGE = 15V, IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.32oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)TCVGE
110oC12V
15V
15V
75oC
110oC
75oC12V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (μs)
12 13 14 15 16
5
10
15
20
25
50
100
150
200
300
tSC
ISC
30
250
VCE = 960V, RG = 3Ω, TJ = 125oC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
6810
60
80
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, VGE = 12V
TC = -55oCTC = 25oC
TC = 150oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0246810
20
100
0
TC = -55oCTC = 25oC
TC = 150oC
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250μs
EON2, TURN-ON ENERGY LOSS (mJ)
10
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15105
12
25 30
035 40
TJ = 25oC, VGE = 12V, VGE = 15V
TJ = 150oC, VGE = 12V, VGE = 15V
RG = 3Ω, L = 1mH, VCE = 960V
20
3.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0.5 15105
1.0
2.5
1.5
3.0
4.0
4.5
25 30
RG = 3Ω, L = 1mH, VCE = 960V
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
35 40
2.0
20
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
HGTG18N120BN Rev. C1
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR TO
EMITTER CURRENT
FIGURE 1 1. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
510
15
20
25
30
35
15
40
25 30 35 40
RG = 3Ω, L = 1mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 15V
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
10
0
20
80
60
305
40
252015 4035
100
120 RG = 3Ω, L = 1mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC OR TJ = 150oC, VGE = 15V
10 205
200
15
100
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
30
350
250
300
4035
RG = 3Ω, L = 1mH, VCE = 960V
25
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 150oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
105
25
100
150
15
50
200
250
3020 4035
RG = 3Ω, L = 1mH, VCE = 960V
125
75
175
225
25
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
136891012
VGE, GATE TO EMITTER VOLTAGE (V)
11
100
150
14 15
200
TC = 25oC
TC = 150oCTC = -55oC
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, VCE = 20V
7
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
5
20
00 10050 150
VCE = 400V
VCE = 800V
IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC
VCE = 1200V
10
15
200
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
HGTG18N120BN Rev. C1
FIGURE 15. CAPACIT ANCE vs COLLECTOR T O EMITTER
VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 5 10 15 20 25
0
1
CIES
COES
2
4
5
6FREQUENCY = 1MHz
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
25
01
02
5
30 DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250μs
20
15
34
VGE = 10V
5
VGE = 15V OR 12V
t1
t2
PD
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
t1, RECTANGULAR PULSE DURATION (s)
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
ZθJC, NORMALIZED THERMAL RESPONSE
0.01
Test Circuits and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
RG = 3Ω
L = 1mH
VDD = 960V
+
-
HGTG18N120BND
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
HGTG18N120BN Rev. C1
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation
damage by the electrostatic discharge of ener gy through the devices.
When handling these devices, care should be exercised to assure that
the static charge built in the handler’ s body capacitance is not
discharged through the device. With proper handling and application
procedures, however , IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be handled
safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept shorted
together either by the use of metal shorting springs or by the
insertion into conductive material such as “ECCOSORBD™
LD26” or equivalent.
2. When devices are removed by hand from their carriers, the hand
being used should be grounded by any suitable means - for
example, with a metallic wristba nd.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from circuits
with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage r ating of
VGEM. Exceeding the rated VGE can result in permanent
damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are essentially
capacitors. Circuits th at le ave the gate open-circuited or
floating should be avoided. These conditions can result in turn-
on of the device due to voltage buildup on the input capacitor
due to leakage currents or pickup.
7. Gate Protection - These devices do no t have an internal
monolithic Zener diode from gate to emitter. If gate protection
is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is
presented as a guide for estimating device performance for a
specific application. Other typical frequency vs collector current
(ICE) plots are possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot
(Figure 3) of a typical device shows fMAX1 or fMAX2; whicheve r
is smaller at each point. T he information is based on measurements
of a typical device and is bounded by the maximum rated junction
temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime
(the denominator) has been arbitrarily held to 10% of the on-state
time for a 50% duty factor. Other definitions are possible. td(OFF)I
and td(ON)I are defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition for an
application other than TJM. td(OFF)I is important when controlling
output ripple under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. T he
sum of device switching and conduction losses must not exceed PD. A
50% duty factor was used (Figure 3) and the conduction losses (PC)
are approximated by PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms shown in
Figure 21. EON is the in tegral of the instantaneous power l oss (ICE
x VCE) during turn-on and EOFF is the integral of the
instantaneous power loss (ICE x VCE) during turn-off. All tail
losses are included in the calculation for EOFF; i.e., the collector
current equals zero (ICE = 0).
HGTG18N120BN
©2001 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
HGTG18N120BN Rev. C1
HGTG18N120BN
Mechanical Dimensions
Figure 20. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2001 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
HGTG18N120BN Rev. C1
TRADEMARKS
The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global subsidiar ies, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SY STEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) support or sustain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identifi cation Product Status Definition
Advance Information Formative / In Design Datasheet cont ains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specificat ions. Fairchild Semiconductor reserves the right to
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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of se miconductor parts is a growing problem in th e industry. All ma nufactures of semiconductor p roducts are exper iencing counterfeiting of their
parts. Customers who inadver tently purcha se counterfeit part s exper ience many problems su ch as loss of brand repu tation , substa ndard perfo rmance, faile d
application, and increased cost of producti on and manuf act uring dela ys. Fairchil d is taking st rong measures to pro tect ourselves and our custo mers from the
proliferation of cou nterfeit parts. Fairchild str ongly encourages cust omers to purchase Fairchild parts either d irectly fr om Fairchild or from Authorized Fairchi ld
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
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warranty issues that may arise. Fairchild will not provide any warranty covera ge or other assistance for parts bought from Unau thorized Sources. Fairchild is
committed to combat this global prob lem and encourage our customers to do their part in stop ping this practice by buying direct or from authorized distribut ors.
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