me SEMI MOTOROLA SC XSTRS/R F MOTOR TECHNICAL DATA Designer's Data Sheet Lee D B caczasy G08Se11 5S NPN Silicon Power Transistors 1 kV Switchmode lil Series OLA CONDUCTOR I These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line- operated switchmode applications. Typical Applications: Features: @ Switching Regulators @ Inverters @ Solenoids @ Relay Drivers @ Motor Controls Deflection Circuits Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents @ Extended FBSOA Rating Using Ultra-fast Rectifiers e Extremely High RBSOA Capability MAXIMUM RATINGS Collector-Emitter Voltage Vcgy = 1000 Vde Fast Turn-Off Times 50 ns Inductive Fall Time 100C (Typ) 90 ns Inductive Crossover Time 100C (Typ} 900 ns Inductive Storage Time 100C (Typ) @ 100C Performance Specified for: MJ16010A MJH16010A POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 and 175 WATTS CASE 1-06 TO-204AA MJ16010A CASE 340-02 TO-218AC MJH16010A Rating Symbol MJ16010A | MJHTG0T0A | Unit Collector-Emitter Voltage VCEO 500 Vde Collector-Emitter Voltage VcEV 1000 Vde Emitter-Base Voitage VeB 6 Vde Collector Current Continuous lc 15 Adc Peakll) Ic 20 Base Current Continuous Ig 10 Ade Peakl1) lam 15 Tota! Power Dissipation @ Tc = 25C Pp 175 135 Watts @ Te = 100C 100 54 Derate above Tc = 25C 1 1,09 wrc Operating and Storage Junction Ta Tstg ~65 to 200 | -55to 150 | C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Raic 1 0.92 CAWW Lead Temperature for Soldering TL 275 C Purposes: 1/8 from Case for 5 Seconds {1) Pulse Test: Pulsa Width = 5 ms, Duty Cycle < 10%. Designer's Data for Worst Case Conditions Tha Designer's Data Sheet parmits the design of most circuits entirely from the information presented. Limit curves representing boundaries on device characteristics are given to facilitate worst casa design. 3-766MOTORCLA SC XSTRS/R F 426 D B u3.7254 ooa4Sele ? i MJ16010A, MJH16010A T-33B+5 T 33-3 ELECTRICAL CHARACTERISTICS (Tc = 26C unless otherwise noted) Characteristic Symbol Min | Typ | Max | Unit | OFF CHARACTERISTICS(1) Collector-Emitter Sustaining Voltage (Table 1} VCEO(sus) 00 - - Vde (Ic = 100 mA, Ig = 0) Collector Cutoff Current IceV mAdc (Vcey = 1000 Vde, Vgg(oft) = 1.5 Vde) _ 0.003 0.15 (Vcey = 1000 Vde, VBE(off) = 1.5 Vde, To = 100C) - 0.020 1.0 Collector Cutoff Current ICER nd 0.020 1.0 mAdc (VceE = 1000 Vde, Ree = 502, To = 100C) Emitter Cutoff Current leEBo _ 0.005 0.15 mAdc (Veg = 6 Vdc, Ic = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Isib See Figure 14a or 14b Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 15 ON CHARACTERISTICS(1) Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 5 Ade, Ig = 1 Adc) - 0.25 0.7 (Ic = 10 Ade, Ig = 2 Adc) - 0.45 1 (le = 10 Ade, Ig = 2 Ade, Tc = 100C) _ 0.60 1.5 Base-Emitter Saturation Voltage VBE(sat) Vde (I = 10 Ade, Ig = 2 Adc) - 1.2 1.5 {ic = 10 Ade, Ip = 2 Adc, Tc = 100C) - 1.2 1.5 DC Current Gain hee 5 8 _- - (ic = 15 Ade, Voce = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob - _ 400 pF (Vcp = 10 Vde, le = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS inductive Load (Table 1} Storage Time tsy _- 900 2000 ns Fall Time (Ty = 100C) tt _ 50 250 - (i = 10 Ade, Crossover Time \g1 = 1.3 Adc, te ad 90 300 Storage Time VBE(off) = 5 Vde, tsy 1100 - VCE(pk) = 400 Vde} Fall Time (Ty = 160C) tj _ 70 Crossover Time te _ 120 _ Resistive Load (Table 2) Delay Time td - 25 100 ns Rise Time lic = 10 Ade, (ipo = 2.6 Ade, tr _ 325 600 Storage Time Voc = 250 Vee, Rpa = 1.69) ts _ qa00 | 3000 = . Cy Fall Time ay = 30 ps, tf - 175 400 Duty Cycle = 2%) _ Storage Time (VBe{oft) = 5 Vde) ts 700 Fall Time tf 80 - (1) Pulse Test: PW = 300 us, Duty Cycle < 2%. 3-767MOTORCLA SC XSTRS/R F MJ16010A, MJH16010A ue o ff e3e7254 ooase13 9 i 7831S 7337/3 TYPICAL STATIC CHARACTERISTICS hee, DC CURRENT GAIN 7 5 3 02 03 05 1 3 5 Ie, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain 05 0.2 Ve, COLLECTOR-EMITTER VOLTAGE {VOLTS} 01 10 0.01 0.02 005 01 02 05 61 2 5 10 Ip, BASE CURRENT (AMPS) Figure 3. Colfector-Emitter Saturation Region 10k 5k + + kp ie 2k ik 30 200 100 50 be C, CAPACITANCE (pF) OE. io 0.1 03 bet oe setttin be bo bee folg = 5 Ieflg = 10 f= Ty = 25C Ty = 25C "01502 03. 06 1 2 3. 5 10 15 Ic. COLLECTOR CURRENT (AMPS) Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Collector-Emitter Saturation Region an Icllg = 10 Ty = 100C = 3 Vee, BASE-EMITTER VOLTAGE (VOLTS) 3 2 et So 015 0.1502 03 06 1 2 3 5 10 15 Ic, COLLECTOR CURRENT (AMPS) Figure 4. Base-Emitter Saturation Region + + MH bt bb ebteet 44 4 eee 500 t= Cob $b ee abet Te = 28C bee i pene oo be be +p Eee ete ee 05 1 2 5 +t + 10 2030 50 100 300 500 850 Vp. REVERSE VOLTAGE (VOLTS) Figure 5, Ca pacitance 3-768a MOTORCLA SC XSTRS/R F MJ16010A, MJH16010A L2E D a b3b7254 O08S2L4 o i 7 33-/5 T-33-/3 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS ic/ig1 = 5, Te = 75C, VoE(pk) = 400 V Ic/lp1 = 10, Te = 75C, VcE(pk) = 400 V zg 28 8 tey, STORAGE TIME (ns} $8 8 3 5 1 Ic. COLLECTOR CURRENT (AMPS) Figure 6. Storage Time Bes 8 8 try COLLECTOR CURRENT FALL TIME {ns} 8 S aie an Rh 3 7 10 tc, COLLECTOR CURRENT {AMPS} Figure 8. Collector Current Fall Time Vaetot) = OV te, CROSSOVER TIME (ns} 16 2 3 5 7 Ic, COLLECTOR CURRENT {AMPS} Figure 10. Crossover Time 3-769 152 10 3 Ic, COLLECTOR CURRENT (AMPS) Figure 7. Storage Time 3 Vee(otf) = OV 82 8 3 nm So tg, COLLECTOR CURRENT FALL TIME (ns) s s 3 5 7 10 fc. COLLECTOR CURRENT (AMPS) Figure 9. Collector Current Fall Time 28 Vee(otf) = OV = 88 8 ty CROSSOVER TIME (ns) 3 ane 5 3 5 1 Ic, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Timee - MOTORCLA SC XSTRS/R F Drive Circuit n2e o ff cau7254 MJ16010A, MJH16010A goasazs 2 &f 733-5 7233-13 a 7T-Fl-O] Table 1. inductive Load Switching +1ho-4 , 1 pF r 100 pF F - MTPEPIO. =~ +10 JI [pe n | y MURS MJE210 500 uF AR 160 2 Volt o- . Loot Ipx? "Tektronix AMS03 Scopa Tektranix Th i P6302 or Equivalent 7403 of Equivalent ec Ty adjusted to obtain letpxy Note: Adjust Voi to obtain desired Vpergtg) at Point A. Icipkt VCE{pk) 10% Voe(pn) t, TIME Vceipk) ctx) ti 10% Ieipx J 2% Te Figure 12. inductive Switching Measurements tq and t, Iga, REVERSE BASE CURRENT (AMPS) om NM we a mn wo wo Vceo{eus) L = 10mH Rgg = = Vee = 20 Volts Icipk} = 100mA inductive Switch L = 200 pH Rago = 0 Vcc = 20Voks Rpt selected for desired tp RBSOA L = 200 nH Raz = 0 Yeo = 20 Volts Ray setected for desired {94 Ie Vceigk) > Vee Jk ig [ | 'p1 laa 1 2 3 Vegloftl. REVERSE BASE VOLTAGE (VOLTS) Figure 13, Peak Reverse Base Current Table 2. Resistive Load Switching Vioth) adjusted to give specified tt driv +10 [ off drive | l PF: 2 Y MuURIOS Vec 250 V Vcc 250V RL 252 Ic 104 . =ltV Vin / " tc 10A (Bt 139A OV > I 134 I Per Spec ty = Sas 8 82 pe Rat 1152 "Tektronix AM503 Re2 Per Spec P6302 or Equivalent RL 252 3-770 +15 0-9 ts and t taka Volt O- ao 5 150 31000 100 nF : +| MIPOPIO }|[ ea MJE20 aT 500 BF aMOTOROLA SC XSTRS/R F =. b2E D J b3u7254 ooasary os MJ16010A, MJH16010A 7-335 T-33-/3 GUARANTEED OPERATING AREA INFORMATION 7 - q/ _ oO / @ 5 = 3 = Z MUR8100 ULTRA-FAST z MUR8100 ULTRA-FAST 2 I RECTIFIER, SEE FIGURE 17 = SEE FIGURE oO oOo ac ce & 0.30 5 0,20 oy 0. B aw Bo: ~ BONDING WIRE So) E---- THERMAL LIMIT S THERMAL LIMIT On SECOND 03 1 10 100 1000 i 10 100 1000 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) Ve, COLLECTOR-EMITTER VOLTAGE {VOLTS} a. MJ16010A b. MJH16010A Figure 14. Maximum Rated Forward Biased Safe Operating Area g Zw = 5 8 g = 6 THERMAL 3 Z a E a a 4 Ielg, = 4 Fa 8 Ty = 100C 5 | --- MJH16010A s a MJ16010A 0 0 200 400 600 800 1000 0 40 80 120 160 200 Ve. COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Tc, CASE TEMPERATURE (C} Figure 15. Maximum Reverse Biased Safe Operating Area Figure 16. Power Derating Voce (1000 MAX} 100 pF a . MTPEP1O t wmpepig OF T + 10 mH AX MURa100 S > Ft muRii00 a WW Muni0s q TUT C Rpg tL MIPI2N10 MJE210 500 pF AR i 150.0 Var T Note: Test Circuit for Ultra-fast FBSOA Vor o Rag = Gand Voy = 5 Voits Figure 17. Switching Safe Operating Area 3-771MOTORGLA SC XSTRS/R F 2 Ss. eo 2 BS eo es 2s 88 age r{t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2 2 0.01 0.02 0.03 0.05 0.1 02 03 06 42E D i &3b7254 0085217 b i MJ16010A, MJH16010A 7-33-75 T-33-93 FT G/-O/ Rescit) = rt} Rac Raye = 101 0.92CAV Tyipk) Te = Pio) Raycl T . "ou fy be ty a DUTY CYCLE, D = ty/tg 3.C~*S 10 on 8 100 200 300 500 | 1000 t, TIME (ms) Figure 18. Thermal Response SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate ICVcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on Te = 28C; Tu(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when Tc = 26C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. TJipk) May be calculated from the data in Figure 18. At high case temperatures, thermal limitations will re- duce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased, Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voitage- current condition allowable during reverse biased turn- off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode, Figure 15 gives the RBSOA characteristics. SWITCHMODE Ill DESIGN CONSIDERATIONS 1. FBSOA Allowable de power dissipation in bipolar power tran- sistors decreases dramatically with increasing collector- emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at Its rated VcEO(sus}. From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN-ON Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 us curve applies for resis- tive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Sim- ilarly, the 100 ns curve applies to inductive loads which are clamped by ultra-fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (see Appli- cation Note AN952). At voltages above 75% of VcEQ(sus). it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is requirad to meet this condition (see Application Note AN875). 3. TURN-OFF A bipolar transistors ability to withstand turn-off stress is dependent upon its forward base drive. Gross over- drive violates the RBSOA curve and risks transistor fail- ure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 3-772MOTORCLA SC XSTRS/R F 12 O ff 4367254 ooasera a f MJ16010A, MJH16010A 7-33-05 7T-33-+93 7-9F/-O/ SWITCHMODE Ill DESIGN CONSIDERATIONS (Cont.) 4. OPERATION ABOVE Vceoisus) When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn- on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momem- tarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). 5. RBSOA Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parame- ters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note ANS51). 6. DESIGN SAMPLES Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaiuation it is advisable to use transistors from several different date codes. 7. BAKER CLAMPS Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are rec- ommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well-suited for higher drive requirements (see Article Reprint AR131). OUTLINE DIMENSIONS . ._~ c B re | dre 7 4 Q f c Vie SEATING i =e =| A | elleD 2m K at eeonom Oho) ||. af 7] wf ol | | | I STYLE 1: | _ | PIN 1. BASE I ie | +o 2 EMITTER Hie at a CASE COLLECTOR 01310005] ] 7] vO] NOTES. 1, DIMENSION:NG AND TOLERANCING PER ANS! Y14 SM, 1962 2. CONTROLLING DIMENSION, INCH 3 ALL AULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA QUTLINE SHALL APPLY. STYLE 1: PIN 1, BASE 2 EMITTER CASE COLLECTOR / CASE 340-02 Toman TO-218AC Mueoioa MJH16010A 3-773