FEATURES
DHIGH SPEED: 4.5ns
DRAIL-TO-RAIL I/O
DSUPPLY VOLTAGE: +2.7V to +5.5V
DPUSH-PULL CMOS OUTPUT STAGE
DSHUTDOWN (TLV3501 only)
DMICRO PACKAGES:
SOT23-6 (single)
SOT23-8 (dual)
DLOW SUPPLY CURRENT: 3.2mA
APPLICATIONS
DAUTOMATIC TEST EQUIPMENT
DWIRELESS BASE STATIONS
DTHRESHOLD DETECTOR
DZERO-CROSSING DETECTOR
DWINDOW COMPARATOR
TLV350x RELATED PRODUCTS
FEATURES PRODUCT
Precision Ultra-Fast, Low-Power Comparator TLC3016
Differential Output Comparator TL712
High-Speed Op Amp, 16-Bit Accurate, 150MHz OPA300
High-Speed Op Amp, Rail-to-Rail, 38MHz OPA350
High-Speed Op Amp with Shutdown, 250MHz OPA357
DESCRIPTION
The TLV350x family of push-pull output comparators
feature a fast 4.5ns propagation delay and operation from
+2.7V to +5.5V. Beyond-the-rails input common-mode
range makes it an ideal choice for low-voltage applica-
tions. The rail-to-rail output directly drives either CMOS or
TTL logic.
Microsize packages provide options for portable and
space-restricted applications. The single (TLV3501) is
available in SOT23-6 and SO-8 packages. The dual
(TLV3502) comes in the SOT23-8 and SO-8 packages.
9
8
7
6
5
4
3
Propagation Delay (ns)
PROPAGATION DELAY vs OVERDRIVE VOLTAGE
0 10040 60 8020 Overdrive Voltage (mV)
Fall
Rise
VCM =1V
VS=5V
CLOAD =17pF
TLV3501
TLV3502
SBOS321D − MARCH 2005 − REVISED JULY 2005
4.5ns Rail-to-Rail, High-Speed Comparator
in Microsize Packages
! !
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Copyright 2005, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
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2
ABSOLUTE MAXIMUM RATINGS(1)
Supply V oltage +5.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Signal Input Terminals, Voltage(2) (V−) − 0.3V to (V+) + 0.3V. . . . .
Signal Input Terminals, Current(2) 10mA. . . . . . . . . . . . . . . . . . . . .
Output Short Circuit(3) 74mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature −40°C to +125°C. . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65°C to +150°C. . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (soldering, 10s) +300°C. . . . . . . . . . . . . . . . . . . .
ESD Rating (Human Body Model) 3000V. . . . . . . . . . . . . . . . . . . .
Charged-Device Model (CDM) 500V. . . . . . . . . . . . . . . . . . . . . . . . .
(1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only , an d
functional operation of the device at these or any other conditions
beyond those specified is not supported.
(2) Input terminals are diode-clamped to the power-supply rails.
Input signals that can swing more than 0.3V beyond the supply
rails should be current limited to 10mA or less.
(3) Short-circuit to ground, one comparator per package.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
TLV3501
SOT23-6
DBV
NXA
TLV3501
SOT23-6
DBV
NXA
TLV3501
SO-8
D
TLV3501A
TLV3501
SO-8
D
TLV3501A
TLV3502
SOT23-8
DCN
NXC
TLV3502
SOT23-8
DCN
NXC
TLV3502
SO-8
D
TLV3502A
TLV3502
SO-8
D
TLV3502A
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www.ti.com.
PIN CONFIGURATIONS
(1) Pin 1 of the SOT23-6 is determined by orienting the package marking as indicated on the diagram.
(2) NC indicates no internal connection.
1
2
3
6
5
4
SHDN
OUT
V+
TLV3501
SOT23−6(1)
−IN
V−
+IN
NXA
1
2
3
4
8
7
6
5
SHDN
V+
OUT
NC(2)
NC(2)
−IN
+IN
V−
TLV3501
SO−8
1
2
3
4
8
7
6
5
V+
OUT A
OUT B
V−
TLV3502
SOT23−8, SO−8
+IN A
−IN A
+IN B
−IN B
A
B
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3
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = −40°C to +125°C.
At TA = +25°C and VS = +2.7V to +5.5V, unless otherwise noted.
TLV3501, TLV3502
PARAMETER CONDITION MIN TYP MAX UNITS
OFFSET VOLT AGE
Input Offset Voltage(1) VOS VCM = 0V, IO = 0mA ±1±6.5 mV
vs Temperature dVOS/dT TA = −40°C to +125°C±5µV/°C
vs Power Supply PSRR VS = 2.7V to 5.5V 100 400 µV/V
Input Hysteresis 6 mV
INPUT BIAS CURRENT
Input Bias Current IBVCM = VCC/2 ±2±10 pA
Input Offset Current(2) IOS VCM = VCC/2 ±2±10 pA
INPUT VOLTAGE RANGE
Common-Mode Voltage Range VCM (V−) − 0.2V (V+) + 0.2V V
Common-Mode Rejection CMRR VCM = −0.2V to (V+) + 0.2V 57 70 dB
VCM = −0.2V to (V+) + 0.2V 55 dB
INPUT IMPEDANCE
Common-Mode 1013 2 Ω pF
Differential 1013 4 Ω pF
SWITCHING CHARACTERISTICS
Propagation Delay Time(3) T(pd) ∆VIN = 100mV, Overdrive = 20mV 4.5 6.4 ns
∆VIN = 100mV, Overdrive = 20mV 7 ns
∆VIN = 100mV, Overdrive = 5mV 7.5 10 ns
∆VIN = 100mV, Overdrive = 5mV 12 ns
Propagation Delay Skew(4) ∆t(SKEW) ∆VIN = 100mV, Overdrive = 20mV 0.5 ns
Maximum Toggle Frequency fMAX Overdrive = 50mV, VS = 5V 80 MHz
Rise Time(5) tR1.5 ns
Fall Time(5) tF1.5 ns
OUTPUT
Voltage Output from Rail VOH, V
OL IOUT = ±1mA 30 50 mV
SHUTDOWN
tOFF 30 ns
tON 100 ns
VL (comparator is enabled)(6) (V+) − 1.7V V
VH (comparator is disabled)(6) (V+) − 0.9V V
Input Bias Current of Shutdown Pin 2 pA
IQSD (quiescent current in shutdown) 2µA
POWER SUPPLY
Specified Voltage VS+2.7 +5.5 V
Operating Voltage Range 2.2 to 5.5 V
Quiescent Current IQVS = 5V, VO = High 3.2 5 mA
TEMPERATURE RANGE
Specified Range −40 +125 °C
Operating Range −40 +125 °C
Storage Range −65 +150 °C
Thermal Resistance qJA
SOT23-5 200 °C/W
SOT23-8 200 °C/W
SO-8 150 °C/W
(1) VOS is defined as the average of the positive and the negative switching thresholds.
(2) The difference between IB+ and IB−.
(3) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by
characterization and testing at 100mV overdrive.
(4) The dif ference between the propagation delay going high and the propagation delay going low.
(5) Measured between 10% of VS and 90% of VS.
(6) When the shutdown pin is within 0.9V of the most positive supply, the part is disabled. When it is more than 1.7V below the most positive supply ,
the part is enabled.
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4
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = +5V, and Input Overdrive = 100mV, unless otherwise noted.
0
5
4
3
2
1
0
−1
VOUT (V) VIN (V)
OUTPUT RESPONSE FOR VARIOUS
OVERDRIVE VOLTAGES (rising)
−10 4010 20 300
Time (ns)
Input
VOD = 100mV VOD = 50mV
VOD = 20mV
VOD =5mV
0
5
4
3
2
1
0
−1
VOUT (V) VIN (V)
OUTPUT RESPONSE FOR VARIOUS
OVERDRIVE VOLTAGES (falling)
−10 4010 20 300Time (ns)
Input
VOD = 100mV
VOD = 50mV
VOD =20mV
VOD =5mV
5.0
4.5
4.0
3.5
3.0
Propagation Delay (ns)
PROPAGATION DELAY vs TEMPERATURE
(VOD =20mV)
Rise
Fall
Temperature (_C)
−40 100 125
−25 0 25 50 75
5.0
4.5
4.0
3.5
3.0
Propagation Delay (ns)
PROPAGATION DELAY vs TEMPERATURE
(VOD =50mV)
Rise
Fall
Temperature (
_
C)
−40 100 125
−25 0 25 50 75
9
8
7
6
5
4
3
Propagation Delay (ns)
PROPAGATION DELAY vs CAPACITIVE LOAD
(VOD = 20mV)
Rise
Fall
Capacitive Load (pF)
010020 40 60 80
PROPAGATION DELAY vs CAPACITIVE LOAD
(VOD = 50mV)
Rise
Fall
9
8
7
6
5
4
3
Propagation Delay (ns)
Capacitive Load (pF)
010020 40 60 80
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5
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5V, and Input Overdrive = 100mV, unless otherwise noted.
9
8
7
6
5
4
3
Propagation Delay (ns)
PROPAGATION DELAY vs SUPPLY VOLTAGE
(VCM =1V,V
OD = 20mV)
26453
Supply Voltage (V)
Rise
Fall
110
90
70
50
Wake−Up Delay (ns)
WAKE−UP DELAY vs TEMPERATURE
Temperature (_C)
−40 100 125
−250 255075
10
0
−10
5
4
3
2
1
0
−1
VOUT (V) VIN (mV)
RESPONSE TO 50MHz SINE WAVE
(VDD =5V,V
IN = 20mVPP)
0 10040 60 8020
Time (ns)
VOUT (V) VIN (mV)
RESPONSE TO 100MHz SINE WAVE
(±2.5V dual supply into 50Ωoscilloscope input)
Time (ns)
500
0
−500
2
1
0
−1
−20 2 4 6 8 10 12 14 16 18 20
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
Quiescent Current (mA)
QUIESCENT CURRENT vs SUPPLY VOLTAGE
26453Supply Voltage (V)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
Quiescent Current (mA)
QUIESCENT CURRENT vs TEMPERATURE
−40 −25 0 12550 75 10025
Temperature (_C)
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6
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5V, and Input Overdrive = 100mV, unless otherwise noted.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Quiescent Current (mA)
QUIESCENT CURRENT vs SHUTDOWN VOLTAGE
052341Shutdown Voltage (V)
5V
(from on to off)
5V
(from off to on)
2.7V
(from on to off)
2.7V
(from off to on)
25
20
15
10
5
0
Quiescent Current (mA)
QUIESCENT CURRENT vs FREQUENCY
0 10040 60 8020 Frequency (MHz)
CLOAD =0.5pF
CLOAD = 10pF
CLOAD = 20pF
CLOAD = 50pF
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7
APPLICATIONS INFORMATION
The TLV3501 and TLV3502 both feature high-speed
response and includes 6mV of internal hysteresis for
improved noise immunity with an input common-mode
range that extends 0.2V beyond the power-supply rails.
SHUTDOWN
A shutdown pin allows the device to go into idle when it is
not in use. When the shutdown pin is high, the device
draws about 2µA and the output goes to high impedance.
When the shutdown pin is low, the TLV3501 is active.
When the TLV3501 shutdown feature is not used, simply
connect the shutdown pin to the most negative supply, as
shown in Figure 1. It takes about 100ns to come out of
shutdown mode. The TLV3502 does not have the
shutdown feature.
VIN
VREF
VOUT
VS
0.1µF2.2
µF
TLV3501
Figure 1. Basic Connections for the TLV3501
OPERATING VOLTAGE
TLV3501 comparators are specified for use on a single
supply from +2.7V to +5.5V (or a dual supply from ±1.35V
to ±2.75V) over a temperature range of −40°C to +125°C.
The device continues to function below this range, but
performance is not specified.
ADDING EXTERNAL HYSTERESIS
The TLV350x has a robust performance when used with a
good layout. However, comparator inputs have little noise
immunity within the range of specified offset voltage
(±5mV). For slow moving or noisy input signals, the
comparator output may display multiple switching as input
signals move through the switching threshold. In such
applications, the 6mV of internal hysteresis of the TLV350x
might not be sufficient. In cases where greater noise
immunity is desired, external hysteresis may be added by
connecting a small amount of feedback to the positive
input. Figure 2 shows a typical topology used to introduce
25mV of additional hysteresis, for a total of 31mV
hysteresis when operating from a single 5V supply. Total
hysteresis is approximated by Equation 1:
VHYST +(V)) R1
R1)R2
)6mV
VHYST sets the value of the transition voltage required to
switch the comparator output by enlarging the threshold
region, thereby reducing sensitivity to noise.
VIN
VREF
VOUT
VS=5V
0.1µF2.2
µF
TLV3501
R1=51
ΩR2=10k
Ω
Figure 2. Adding Hysteresis to the TLV350x
INPUT OVER-VOLTAGE PROTECTION
Device inputs are protected by ESD diodes that will
conduct if the input voltages exceed the power supplies by
more than approximately 300mV. Momentary voltages
greater than 300mV beyond the power supply can be
tolerated i f the input current is limited to 10mA. This limiting
is easily accomplished with a small input resistor in series
with the comparator, as shown in Figure 3.
VIN
VREF
VOUT
VS
0.1µF2.2
µF
TLV3501
R
Figure 3. Input Current Protection for Voltages
Exceeding the Supply Voltage
(1)
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8
RELAXATION OSCILLATOR
The TLV350x can easily be configured as a simple and
inexpensive relaxation oscillator. In Figure 4, the R2
network sets the trip threshold at 1/3 and 2/3 of the supply.
Since this is a high-speed circuit, the resistor values are
rather low in order to minimize the effect of parasitic
capacitance. The positive input alternates between 1/3 of
V+ and 2/3 of V+ depending on whether the output is low
or high. The time to charge (or discharge) is 0.69R1C.
Therefore, the period is 1.38R1C. For 62pF and 1kΩ as
shown in Fi g u r e 4 , t h e o u tput is calculated to be 10.9MHz.
An implementation of this circuit oscillated at 9.6MHz.
Parasitic capacitance and component tolerances explain
the difference between theory and actual performance.
V+ f=10MHz
VS=5V
2/3 (V+)
1/3 (V+)
R1
1kΩ
R2
5kΩ
R2
5kΩ
R2
5kΩ
VOUT
VC
V+
t
C
62pF
1.38R1C
t
Figure 4. Relaxation Oscillator
HIGH-SPEED WINDOW COMPARATOR
A window comparator circuit is used to determine when a
signal is between two voltages. The TLV3502 can readily
be used to create a high-speed window comparator. VHI
is the upper voltage threshold, and VLO is the lower voltage
threshold. When VIN is between these two thresholds, the
output in Figure 5 is high. Figure 6 shows a simple means
of obtaining an active low output. Note that the reference
levels are connected differently between Figure 5 and
Figure 6. The operating voltage range of either circuit is
2.7V to 5.5V.
TLV3502b
TLV3502a
VOUT
VHI
VLO
VIN
SN74LVC1G02
VHI
VLO
VIN
VOUT
V
Time
Figure 5. Window Comparator—Active High
TLV3502b
TLV3502a
VOUT
VHI
VLO
VIN
SN74AHC00
VHI
VLO
VIN
VOUT
V
Time
Figure 6. Window Comparator—Active Low
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9
PCB LAYOUT
For any high-speed comparator or amplifier, proper design
and printed circuit board (PCB) layout are necessary for
optimal performance. Excess stray capacitance on the
active input, or improper grounding, can limit the maximum
performance of high-speed circuitry.
Minimizing resistance from the signal source to the
comparator input is necessary in order to minimize the
propagation delay of the complete circuit. The source
resistance along with input and stray capacitance creates
an RC filter that delays voltage transitions at the input, and
reduces the amplitude of high-frequency signals. The
input capacitance of the TLV350x along with stray
capacitance from an input pin to ground results in several
picofarads of capacitance.
The location and type of capacitors used for power-supply
bypassing are critical to high-speed comparators. The
suggested 2.2µF tantalum capacitor do not need to be as
close to the device as the 0.1µF capacitor, and may be
shared with other devices. The 2.2µF capacitor buffers the
power-supply line against ripple, and the 0.1µF capacitor
provides a charge for the comparator during high-
frequency switching.
In a high-speed circuit, fast rising and falling switching
transients create voltage differences across lines that
would be a t the same potential at DC. To reduce this ef fect,
a ground plane is often used to reduce difference in voltage
potential within the circuit board. A ground plane has the
advantage of minimizing the effect of stray capacitances
on the circuit board by providing a more desirable path for
the current to flow . With a signal trace over a ground plane,
at high-frequency the return current (in the ground plane)
tends to flow right under the signal trace. Breaks in the
ground plane (as simple as through-hole leads and vias)
increase the inductance of the plane, making it less
effective at higher frequencies. Breaks in the ground plane
for necessary vias should be spaced randomly.
Figure 7 shows an evaluation layout for the TLV3501 SO-8
package; Figure 8 is for the SOT23-5 package. They are
shown with SMA connectors bringing signals on and off
the board. RT1 and RT2 are termination resistors for +VIN
and −VIN, respectively. C1 and C2 are power-supply
bypass capacitors. Place the 0.1µF capacitor closest to
the comparator. The ground plane is not shown, but the
pads that the resistors and capacitors connect to are
shown. Figure 9 shows a schematic of this circuit.
−VIN
RT2
RT1
+VIN
SD
DUT
GND +VS
C2
C1
VOUT
Figure 7. TLV3501D (SO-8) Sample Layout
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SBOS321D − MARCH 2005 − REVISED JULY 2005
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10
−VIN
RT2
RT1
+VIN
SD
DUT
GND +VS
C2C1
VOUT
Figure 8. TLV3501DBV (SOT23) Sample Layout
TLV3501 VOUT
+VS
C1
100nF C2
2.2µF
RT2
50Ω
RT1
50Ω
−VIN
+VIN
Shutdown
Figure 9. Schematic for Figure 7 and Figure 8
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TLV3501AID ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDG4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDR ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3501AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AID ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDCNR ACTIVE SOT-23 DCN 8 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDCNRG4 ACTIVE SOT-23 DCN 8 3000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDCNT ACTIVE SOT-23 DCN 8 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDCNTG4 ACTIVE SOT-23 DCN 8 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDG4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDR ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TLV3502AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
PACKAGE OPTION ADDENDUM
www.ti.com 23-Mar-2010
Addendum-Page 1
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLV3502 :
•Automotive: TLV3502-Q1
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
PACKAGE OPTION ADDENDUM
www.ti.com 23-Mar-2010
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV3501AIDBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV3501AIDBVT SOT-23 DBV 6 250 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TLV3501AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV3502AIDCNR SOT-23 DCN 8 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TLV3502AIDCNT SOT-23 DCN 8 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
TLV3502AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV3501AIDBVR SOT-23 DBV 6 3000 180.0 180.0 18.0
TLV3501AIDBVT SOT-23 DBV 6 250 180.0 180.0 18.0
TLV3501AIDR SOIC D 8 2500 367.0 367.0 35.0
TLV3502AIDCNR SOT-23 DCN 8 3000 195.0 200.0 45.0
TLV3502AIDCNT SOT-23 DCN 8 250 195.0 200.0 45.0
TLV3502AIDR SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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