SPECIFICATIONS General Series PTC 10008, PTC 10009 NPN Silicon Power Darlington Transistors 20 Amperes 500 Volts FEATURES @ High Voltage Rating 500 Volts Sustaining @ Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS @ High Voltage Switching Power Supplies @ Inverters/Regulators Deflection Circuits Control Circuitry Electrical The PTC 10008 and PTC 10009 Powermode series of silicon NPN darlington transistors are designed for high voltage, high speed, high power switching applications. These high voltage darlington transistors are ideally suited for applications in switching power supplies, regulators and inverter or converter circuits operating off 240 volt lines. 1.050 0.161 (4.09) DIA (26.68) MAX. 0.151 (3.84) . | 2 HOLES 0.675 (17.65)t 1.573 0.655 (16.64) (39.96) MAX. 1.197 (30.40 1.177 (29.90) BASE | 0.225 (5.72) 0.205 (5.21) 0.440 (11.18)t 0.420 (10.67) tMEASURED AT SEATING PLANE 0.450 (11.43 0.875 (22.23) 200 635) 0.135 MAX. DIA (3.43) MAX. DIA. SEATING j | PLANE L_ 0.32 (8.13) MIN. 0.043 (1.09) 0.038 (0.97) DIA- Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. Package outline JEDEC TO-204MA AVAILABLE IN STANDARD VALUES FROM STOCK AT ELECTRONIC DISTRIBUTORS. 280 SERIES PTC 10008/10009 High Voltage Fast Switching NPN Darlingtons Absolute maximum ratings Thermal and mechanical characteristics Description PTC 10008 | PTC 10009 | Unit | Conditions Description Type | Min. | Typ. | Max. | Unit VCBO Collector-Base Voltage 650 700 Volts RaJC Thermal Resistance All 10 |ecw VCEO(sus) Collector-Emitter Voltage 450 500 Volts Junction to Case . Vi Collector-Emitter Vol Maximum Lead Temperature for CEX(sus) Clector-EmiterNotace 450 500 Volts Soldering Purposes: Pe from Case 275 C Ic Collector Current Continuous 20 A for 5 Seconds Ic Collector Current Peak 30 A tJ,tSTG Operating and Storage Junction > 65 200 Cc IB Base Current Continuous 25 A Temperature Range IB Base Current Peak 5.0 A Pp Maximum Power Dissipation 175 Ww Tc = 25C lE Emitter Current Continuous 20 A le Emitter Current Peak 30 A ; rictir . : ro Electrical characteristics at 25C (unless otherwise specified) PTC 10008 PTC 10009 Description Min. * Max. Min. Max. Unit Conditions VCEO(sus)} Collector-Emitter Ic =2A L=2mH Sustaining Voltage 450 500 Vv Unclamped VCEX(sus) Collector-Emitter Ic = 2A Sustaining Voltage 450 500 v VBE(off) = 5V VCE = Rated VCBO ; col cuotte 0.25 0.25 mA VBE(off) = -1.5V ICEV ollector Cutoff Current 5 5 mA VCE = Rated Veno VBE(off) = 1.5V, Tc = + 100C [EBO Emitter Cutoff Current 175 175 mA VEB = 2V y Col F 2.0 2.0 v Ic = 10A, Ip = 500mA CE(sat) ollector-Emitter = - - - Saturation Voltage 25 25 Vv Ic = 10A, 1B = .5A, TC = + 100C 3.5 3.5 v Ic = 20A, IB = 2A VBE(sat) Base-Emitter _ _ Saturation Voltage 25 2.5 v IC = 10A, 1B = 500 mA 40 400 40 400 Ic = 5A, VCE = 5V hFE DC Current Gain 30 300 30 300 Ic = 10, VCE = 5V VE Diode Forward Voltage 5 5 Vv ip = 10A Is/b Second Breakdown VCE = 10V, Collector Current 175 17.5 Non Rep. tp = 1s Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions td Delay Time 0.25 0.25 BS ico Ti 15 15 VCC = 250V, Ic = 10A te Rise Time HS | igi = 0.5A, 2 = 2A, tp = 20us ts Storage Time 2.0 2.0 Ss VBE(off) = 6V tf Fall Time 0.6 0.6 BS Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions tev Storage Time 3.0 3.0 ps Vclamp = VCEX, IC = 10A IB1 = 0.5A, IBe = 2A te Crossover Time 0.5 0.5 VBE(off) = 6V,L = 200uH tsv Storage Time 40 4.0 BS Velamp = 250V, Tc = + 100C 1B1 = 0.5A, IB2 = 2A, Ic = 10A tc Crossover Time - LS 15 BS VBE (off) = 6V,L = 200uH 281