APTGT150A120T Phase leg Fast Trench + Field Stop IGBT(R) Power Module G1 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 OUT E2 VBUS OUT 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1200 220 150 350 20 690 Tj = 125C 300A @ 1150V TC = 25C TC = 80C TC = 25C Unit V A May, 2005 Q1 Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT150A120T - Rev 0 NTC2 VBUS VCES = 1200V IC = 150A @ Tc = 80C APTGT150A120T All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Dynamic Characteristics Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Tf Eon Eoff Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Test Conditions Typ 1.7 2.0 5.8 Typ 10.7 0.56 0.48 280 40 450 Max Unit 1 2.1 mA 6.5 600 V nA Max Unit nF ns 75 290 45 ns 550 90 14 16 Min Typ mJ Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 150A trr Reverse Recovery Time IF = 150A VR = 600V Qrr Reverse Recovery Charge di/dt =3000A/s Unit V Tj = 25C Tj = 125C 250 500 Tc = 80C Tj = 25C Tj = 125C Tj = 25C 150 1.6 1.6 170 Tj = 125C Tj = 25C 280 15 Tj = 125C 29 A A 2.1 V ns C May, 2005 IRM V APT website - http://www.advancedpower.com 2-5 APTGT150A120T - Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT150A120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R 25 Max Unit k K Min Typ Max 0.18 0.32 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 C/W V 150 125 125 4.7 160 C N.m g APT website - http://www.advancedpower.com 3-5 APTGT150A120T - Rev 0 May, 2005 Package outline (dimensions in mm) APTGT150A120T Typical Performance Curve Output Characteristics (VGE =15V) 300 Output Characteristics 300 T J = 125C TJ =25C 250 250 VGE =17V 150 100 50 50 VGE=9V 0 0 1 2 VCE (V) 3 0 4 32 T J=25C 250 24 E (mJ) 150 100 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2 TJ = 125C 28 TJ=125C 200 1 3 4 Energy losses vs Collector Current Transfert Characteristics 300 IC (A) VGE =15V 150 100 0 TJ =125C 20 Eon Eoff 16 12 Er 8 50 4 0 0 5 6 7 8 9 10 11 0 12 50 Switching Energy Losses vs Gate Resistance 34 26 22 150 200 250 300 Reverse Bias Safe Operating Area 350 VCE = 600V VGE =15V IC = 150A T J = 125C 30 100 IC (A) VGE (V) Eon 300 250 Eoff IC (A) E (mJ) VGE=13V 200 IC (A) IC (A) T J=125C 200 18 14 Er 10 200 150 VGE =15V TJ=125C RG=2.2 100 50 6 2 0 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 0 300 600 900 V CE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT 0.9 0.16 0.7 May, 2005 0.12 0.5 0.08 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT150A120T - Rev 0 Thermal Impedance (C/W) 0.2 APTGT150A120T Forward Characteristic of diode 300 VCE=600V D=50% R G=2.2 T J=125C 50 ZCS 40 200 T c=75C 30 TJ=25C 250 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS T J=125C 150 100 20 Hard switching 10 TJ=125C 50 TJ=25C 0 0 0 40 80 120 IC (A) 160 200 0 240 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT150A120T - Rev 0 May, 2005 rectangular Pulse Duration (Seconds)