FLM6472-8D oe) FUJITSU Internally Matched Power GaAs FETs FEATURES * High Output Power: Pj gp = 39dBm (Typ.) * High Gain: Gjgp = 7.0dB (Typ.) * High PAE: nagg = 29% (Typ.) * Low IMg = -45dBc@Po = 28dBm * Broad Band: 6.4 ~ 7.2GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed Package DESCRIPTION The FLM6472-8D is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Vbs 15 Drain-Source Voltage Gate-Source Voltage Vas 5 Vv Total Power Dissipation PT Te = 25C 42.8 Ww Storage Temperature Tstg -65 to +175 C Channel Temperature Tech 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vps) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -4.4 mA respectively with gate resistance of 10022. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C Item Symbol Test Conditions aye Unit Saturated Drain Current Ipss_| Vps =5V, Vas = 0V 3600 | 5400 mA Transconductance gm Vos = 5V, Ips =2200mA - 2000 - mS Pinch-off Voltage Vp Vps = 5V, Ips =180mA -1.0 | -2.0 | -3.5 V Gate Source Breakdown Voltage | Vaso | Iqs =-180uA 5 - - V Output Power at 1dB G.C.P. P1dB 38 39 - dBm Power Gain at 1dB G.C_P. Giap | Vps =10V, 6.0 | 7.0 | - dB i IDS = 0.6 IDSS (Typ.), , Drain Current ldsr_ | og4~7 9 GHy, 2200 | 2600 mA Power-added Efficiency Nadd ZS=Z| =50 ohm - 29 - % Gain Flatness AG - - +0.6 dB . f = 7.2 GHz, Af = 10 MHz Stclonion intermodulation IM3 2-Tone Test 42 -A5 - dBc Pout = 28dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 | 3.5 C/W CASE STYLE: IB G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1998 Microwave Databook 408 Data Sheets FLM6472-8D roe) a0) SY Internally Matched Power GaAs FETs OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER Vps=10V 40 Vps=10V 2 f = . H E PidB = a 6.8 GHz oS 5 ea Pad oO g =~ 38 4 Oo o Pout YY o = ZL S oo YY 3 34 4 7 30 3 6 / nang 3 O 32 co- 16 64 66 68 7.0 7.2 24 26 28 30 32 34 Frequency (GHz) Input Power (dBm) OUTPUT POWER & IMg vs. INPUT POWER Ee Vps=10V a 37 fy = 7.2 GHz ~ 935| f2= 7.21 GHz _i 2-tone test L- O 33 4 ~ 31 of 2 _ - 0 2 29 LILI | 90 8 a Y | kh Oo S27 A _1A| 40 YY L| = > a 18 20 22 24 26 28 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Data Sheets 409 1998 Microwave Databook FLM6472-8D oe) Internally Matched Power GaAs FETs aOR E 814 o S94 s70== Spo anon Sy +3. 6.2 GHz | BR SCALE FOR |S Soy Oo wo SCALE FOR [8,4 0.2 | S-PARAMETERS Vps = 10V, IDs = 2200mA FREQUENCY $11 $21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 6300 15 47 3.11 34 04 8 78 -79 6400 .20 55 3.11 18 .05 -28 73 -94 6500 25 52 3.17 4 .05 -45 .68 -108 6600 29 47 3.16 8 .06 -61 65 -119 6700 31 37 3.14 -23 .06 -78 .59 -133 6800 31 26 3.04 -40 .07 -93 .56 -147 6900 .30 14 3.06 -65 .07 -104 52 -163 7000 27 3 3.01 -69 .08 -120 52 179 7100 24 -26 2.97 -85 .08 -133 51 165 7200 .20 -67 2.82 -103 .09 -147 52 147 7300 19 -96 2.77 -117 .09 -160 53 131 7400 23 -137 2.63 -132 .08 -175 55 113 1998 Microwave Databook 410 Data Sheets FLM6472-8D fe) ae) I Internally Matched Power GaAs FETs Case Style "IB" Metal-Ceramic Hermetic Package ro 2.0 Min. (0.079) o| gia = L > 12.90.2 (0.508) 2-R1.620.15 (0.063) <i. << Ee , | 0.6 de LJ 2.640.15 0.024) s|2 0.102) ale oO 10.7 0.421 0.427) | 12.0 ! (0.422) 1 als as. 0.422 17.0+0.15 Ns 1: Gate (0.669) 2: Source (Flange) a 21.0+0.15 _ 3: Drain <4 (0.827) > Unit: mm (Inches) All 1998 Microwave Databook Data Sheets