VS-GP400TD60S
www.vishay.com Vishay Semiconductors
Revision: 11-Dec-17 2Document Number: 95768
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 500 μA 600 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 200 A - 1.13 1.24
VGE = 15 V, IC = 400 A - 1.30 1.52
VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.03 -
VGE = 15 V, IC = 400 A, TJ = 125 °C - 1.26 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 9.6 mA 4.9 5.9 8.8
VCE = VGE, IC = 9.6 mA, TJ = 125 °C - 3.2 -
Temperature coefficient of threshold
voltage VGE(th)/TV
CE = VGE, IC = 9.6 mA, (25 °C to 125 °C) - -27 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 50 A - 74 - S
Transfer characteristics VGE VCE = 20 V, IC = 400 A - 10.7 - V
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 5 200 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 - mA
Diode forward voltage drop VFM
IFM = 200 A - 1.42 1.55
V
IFM = 400 A - 1.76 1.98
IFM = 200 A, TJ = 125 °C - 1.43 -
IFM = 400 A, TJ = 125 °C - 1.88 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 750 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching energy Eon
IC = 400 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
-6.3-
mJTurn-off switching energy Eoff -45-
Total switching energy Etot - 51.3 -
Turn-on delay time td(on) - 633 -
ns
Rise time tr- 254 -
Turn-off delay time td(off) - 715 -
Fall time tf- 490 -
Turn-on switching loss Eon
IC = 400 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
-7.2-
mJTurn-off switching loss Eoff -74-
Total switching loss Etot - 81.2 -
Turn-on delay time td(on) - 595 -
ns
Rise time tr- 250 -
Turn-off delay time td(off) - 950 -
Fall time tf- 865 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = n/a, VCC = 300 V
VP = 600 V, Rg = 1.5 VGE = 15 V to 0 V,
L = 500 μH
Fullsquare
Diode reverse recovery time trr IF = 400 A, Rg = 1.5
VCC = 300 V, TJ = 25 °C
- 123 - ns
Diode peak reverse current Irr - 107 - A
Diode recovery charge Qrr -8.1-μC
Diode reverse recovery time trr IF = 400 A, Rg = 1.5
VCC = 300 V, TJ = 125 °C
- 167 - ns
Diode peak reverse current Irr - 140 - A
Diode recovery charge Qrr - 14.7 - μC