
Semiconductor Group 1 Nov-08-1996
BSM150GAL120DN2E3166
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
CPackage Ordering Code
BSM150GAL120DN2E31661200V 210A HALF BRIDGE GAL 2 C67076-A2112-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 1200 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 1200
Gate-emitter voltage
V
GE ± 20
DC collector current
T
C = 25 °C
T
C = 80 °C
I
C
150
210 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 80 °C
I
Cpuls
300
420
Power dissipation per IGBT
T
C = 25 °C
P
tot 1250 W
Chip temperature
T
j+ 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC ≤ 0.1 K/W
Diode thermal resistance, chip case
R
thJCD≤ 0.25
Diode thermal resistance, chip-case,chopper
R
THJCDC ≤ 0.125
Insulation test voltage,
t
= 1min.
V
is 4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56