Product Bulletin JANTX, JANTXV, 2N2907AUA September 1996 (SP, OPTEK Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUA .225 (5.72) .075 (1.91) .215 (5.46) 061 (1.55) PIN 1 .155 (3.94) IDENTIFIER a eo .145 (3.68) .048 (1.22) .028 (0.71) pet 3 PL .022 (0.56) 032 (0.81) |. 2 | COLLECTOR EMITTER = 1 2 = | 4 055 (1.40) BASE So 3 .088 (2.24) 045 (1.14) .072 (1.83) DIMENSIONS ARE IN INCHES (MILLIMETERS) Features e Ceramic surface mount package e Miniature package to minimize circuit board area e Hermeticaily sealed * Qualification per MIL-PRF-19500/291 Description The JANTX/TXV2N2907AUA is a hermetically sealed ceramic surface mount general purpose switching transistor. The miniature four pin ceramic package is ideal for designs where board space and device weight are important design considerations. The UA suffix denotes the 4 terminal leadless chip carrier package, type A per MIL-PRF-19500/291. Typical screening and lot acceptance tests are provided on page 13-4. The Burn-in condition is Vcg = 30 V, Pp = 400 mW, Ta = 25C, t= 80 hrs. Refer to MIL-PRF-19500/291 for complete requirements. In addition, the TX and TXV versions receive 100% thermal response testing. When ordering parts without processing, do not use a JAN prefix. Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Collector-Base voltage... cece eee cence cree eee een nes 60 V Collector-Emitter Voltage... 0... cece eee eee e eee e eee aee 60 V Emitter-Base Voltage 0.0... ccc cece ene ene e eae a eens 5.0V Collector Current-Continuous.......... 0... c cece cece eee eens eens 600 mA Operating Junction Temperature (TJ)... 0... cee eee eee -65 C to +200 C Storage Junction Temperature (Tstg).. 2... sce cece cece eee eee -65 C to +200 C Power Dissipation @ Ta=25 Co... ccc cece eee eeteeunens 0.4W Power Dissipation @ To = 25C 0... eee cece cece cece eneenes 1.16 w) Soldering Temperature (vapor phase reflow for 30 sec.) ...........00000e 215C Soldering Temperature (heated collet for 5 sec.).......... 0c cee cece eee 260C Notes: (1) Derate linearly 6.6 mW/ C above 25 C. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-8 (972) 323-2200 Fax (972) 323-2396 Types JANTX, JANTXV, 2N2907AUA Electrical Characteristics (Ta = 25 C unless otherwise noted) (2) Pulse Width < 300 ps, Duty Cycle < 2.0% Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-9 (972)323-2200 Fax (972)323-2396 SYMBOL | PARAMETER | MIN | MAX | UNIT | TEST CONDITIONS Off Characteristics Verycso |Collector-Base Breakdown Voltage 60 Vv Ic = 10 pA, le =0 ViBryceo |Collector-Emitter Breakdown Voltage 60 V Ic = 10 mA, Ip = 0?) Verjeso |Emitter-Base Breakdown Voltage 5.0 Vs|te=10pA, Ic =0 IcBo Collector-Base Cutoff Current 10 nA |Vcp =50V, le =0 10 uA |Vcp=50V, le =0, Ta= 150C Ices Collector-Emitter Cutoff Current 50 nA |VceE=50V IEBO Emitter-Base Cutoff Current 50 nA jVep=4.0V, Ic =0 On Characteristics hre Forward-Current Transfer Ratio 75 - Voce =10V,Ilc=0.1 mA 100 ; 450 - Voce = 10 V, Io = 1.0 mA 100 - Voce =10V, Ic =10mA 100 | 300; - = |VcE=10V, Ic = 150 mA) 50 - |VoE = 10 V, Ic = 500 ma) 50 - |Vce=10V, Ic = 1.0 mA, Ta = -55C < Vcesat) | Collector-Emitter Saturation Voltage 0.40 V Ic = 150 mA, Ip = 15 mal?) iF , s 160 | V_ |lc=500mA, Ip =50 mA?) Age VBe(sat) |Base-Emitter Saturation Voltage 1.30 V Ic = 150 mA, !p = 15 ma?) BD =. 2.60] V_ |lc=500 mA, Ip =50 mA) i Small-Signal Characteristics Nte Small Signal Forward Current Transfer 100 - jVcE=10V, Ic = 1.0 mA, f = 1.0 kHz Ratio Ihfel Small Signal Forward Current Transfer 2.0 - |VceE = 20 V, Ic = 50 mA, f = 100 MHz Ratio Cobo Open Circuit Output Capacitance 8.0 PF !Vop = 10 V, 100 kHz <f< 1.0 MHz Cibo Input Capacitance (Output Open 30 PF Veg = 2.0 V, 100 kHz <f< 1.0 MHz Capacitance) Switching Characteristics ton Turn-On Time 45 ns jVcec=30V, Io = 150 mA, Ip1 = 15 MA toff Turn-Off Time 300 ns |Vcoc = 30 V, Ic = 150 mA, Ibi = !a2 = 15 MA