VVZ 12 IdAVM = 20 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 2 Type 6 1 1 3 5 VVZ 12-12io1 VVZ 12-14io1 VVZ 12-16io1 4 3 2 6 7 8 5 7 4 8 Test Conditions IdAV IdAVM IFRMS, ITRMS TK = 100C; module module per leg IFSM, ITSM TVJ = 45C; VR = 0 I2t Maximum Ratings 15 20 12 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 110 115 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 100 105 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 60 55 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 50 45 A2 s A2s 150 A/ms Features Applications (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 IdAV diG/dt = 0.3 A/ms 1000 V/ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 2-2.5 18-22 28 Nm lb.in. g TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) VRGM PGM TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved A/ms Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries Advantages 500 Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Soldering terminals UL registered E 72873 Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") 744 Symbol 1-2 VVZ 12 Symbol Test Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 30 A, TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT TVJ = TVJM TVJ = 25C 5 0.3 mA mA 2 V 1.1 V 30 mW VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C 1.0 1.2 65 80 50 V V mA mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA IL IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms TVJ = 25C TVJ = -40C TVJ = 125C 150 200 100 mA mA mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms 2 ms tq Qr TVJ = 125C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM typ. 150 75 ms mC RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 2.5 0.42 3.1 0.52 K/W K/W K/W K/W RthJH dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration (c) 2000 IXYS All rights reserved 7 mm 7 mm 50 m/s2 2-2