© 2000 IXYS All rights reserved 1 - 2
IdAVM = 20 A
VRRM = 1200-1600 V
VRSM VRRM Type
VDSM VDRM
VV
1300 1200 VVZ 12-12io1
1500 1400 VVZ 12-14io1
1700 1600 VVZ 12-16io1
Symbol Test Conditions Maximum Ratings
IdAV TK = 100°C; module 15 A
IdAVM module 20 A
IFRMS, ITRMS per leg 12 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 110 A
VR = 0 t = 8.3 ms (60 Hz), sine 115 A
TVJ = TVJM t = 10 ms (50 Hz), sine 100 A
VR = 0 t = 8.3 ms (60 Hz), sine 105 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 60 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 55 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 50 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 45 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/ms
f =400 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/3 ˜ IdAV 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp =30ms£10 W
IT = ITAVM tp = 500 ms£5W
tp =10ms £1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 28 g
Features
●Package with DCB ceramic base plate
●Isolation voltage 3600 V~
●Planar passivated chips
●Soldering terminals
●UL registered E 72873
Applications
●Input rectifier for switch mode power
supplies (SMPS)
●Softstart capacitor charging
●Electric drives and auxiliaries
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
744
VVZ 12
Three Phase Half Controlled
Rectifier Bridge
2
134
5678
2
8
5
7
4
163
© 2000 IXYS All rights reserved 2 - 2
Symbol Test Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM £5mA
TVJ = 25°C£0.3 mA
VF, VTIF, IT = 30 A, TVJ = 25°C£2V
VT0 For power-loss calculations only 1.1 V
rT(TVJ = 125°C) 30 mW
VGT VD = 6 V; TVJ = 25°C£1.0 V
TVJ = -40°C£1.2 V
IGT VD = 6 V; TVJ = 25°C£65 mA
TVJ = -40°C£80 mA
TVJ = 125°C£50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM £5mA
ILIG = 0.3 A; tG = 30 msT
VJ = 25°C£150 mA
diG/dt = 0.3 A/msT
VJ = -40°C£200 mA
TVJ = 125°C£100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.3 A; diG/dt = 0.3 A/ms
tqTVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms typ. 150 ms
QrVR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM 75 mC
RthJC per thyristor (diode); DC current 2.5 K/W
per module 0.42 K/W
RthJH per thyristor (diode); DC current 3.1 K/W
per module 0.52 K/W
dSCreeping distance on surface 7 mm
dACreepage distance in air 7 mm
aMax. allowable acceleration 50 m/s2
VVZ 12
