NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt VCEO
* Gain of 50 at IC= 1 Amp
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6714 2N6715 UNIT
Collector-Base Voltage VCBO 40 50 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6714 2N6715 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 40 50 V IC=1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 40 V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 55VI
E=1mA, IC=0
Collector Cut-Off
Current
ICBO 0.1
0.1 µA
µA
VCB
=40V, IE=0
VCB
=50V, IE=0
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5 0.5 V IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 1.2 1.2 V IC=1A, VCE
=1V*
Static Forward
Current Transfer
Ratio
hFE 55
60
50 250
55
60
50 250
IC=10mA, VCE
=1V*
IC=100mA, VCE
=1V*
IC=1A, VCE
=1V*
Transition
Frequency
fT50 500 50 500 MHz IC=50mA, VCE
=10V
Collector Base
Capacitance
CCB 30 30 pF VCE
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6714
2N6715
3-5
C
B
E
