FS1A THRU FS1M 1.0 AMP FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts FEATURES * For surface mount applications * Extremely low thermal resistance * Easy pick and place % High temp soldering:250C for 10 seconds at terminals x Superfast recovery times for high efficiency MECHANICAL DATA * Case: Molded plastic * Terminals: Solder plated * Polarity: Indicated by cathode band Standard packaging: 12mm tape (ELA STD RS - 481) Weight:0.091 gram(SMA/DO-214AC* ) 0.064 gram((SMA/DO-214AC) SMA/DO-214AC* jn} { ( ob: oa TLE meee FP Lt SMA/DO-214AC = -El : [el >| ] |] MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum thermal resistance; 15C/W Junction to lead Rating at 25C ambient temperature unless otherwise specified. TYPE NUMBER SYMBOLS | FS1A | FS1B | FS1D | FS1G | FS1J | FSIK | FS1M | UNITS Maximum Recurrent Peak Reverse Voltage Vero 50 100 200 400 600 800 | 1000 Vv Maximum RMS Voltage Vams 35 70 140 | 280 } 420 560 | 700 Vv Maximum DC Blocking Voltage Vpe 50 100 200 | 400 600 goo | 1000 v Maximum Average Forward Rectified Current T, = 75C lecav) 1.0 A Peak Forward Surge Current, (8.3 ms half sine) lesm 30 A Maximum Instantaneous Forward Voltage @ 1.0A(Note 1) Ve 1.3 Vv Maximum D.C Reverse Current @ Ta = 25C | 5 at Rated D.C. Blocking Voltage @ Ty = 125C R 200 vA Maximum Reverse Recovery time( Note 2) Tre 150 250 500 nS Typical Junction Capacitance (Note 3) Cs 10 pF Operating and Storage Temperature Range Ty, Tste - 50 to + 150 i} NOTES: 1. Pulse test: Pulse width 300usec,1% duty cycle. 2. Reverse Recovery Test Conditions: Ir =0.5A. Ip =1-0A, Ing =0.25A. 3.Measured at 1 MHz and applied Va = 4.0 volts D.C. JINAN GUDE ELECTRONIC DEVICE CO., LTD. RATINGS AND CHARACTERISTIC CURVES (FS1A THRU FS1M) Figure 1 Typical Forward. Characteristics Figure 2 Forward Current Derating Curve 2. = Amps P.C.B mounted on 0.2 0.2"(5.0 x 5.0mm) copper pad areas Single Phase,Haif Wave 60Hz Resistive or Inductive Load Cc Average Forward Rectified Current-Amperes versus Lead Temperature-c Vv instantaneous Forward Current-Amperes versus instantaneous Forward Voltage-Volts Figure 3 Typical Junction Capacitance 200 100 60 40 20 pF 10 1 2 4 1 2 4 10 20 40 100 400 1000 v Junction Capacitance-pF versus Reverse Voltagd-v JINAN GUDE ELECTRONIC DEVICE Co., LTD. RATINGS AND CHARACTERISTIC CURVES (FS1A THRU FS1M) Figure 1 Typical Forward. Characteristics Figure 2 Forward Current Derating Curve 2. = Amps P.C.B mounted on 0.2 0.2"(5.0 x 5.0mm) copper pad areas Single Phase,Haif Wave 60Hz Resistive or Inductive Load Cc Average Forward Rectified Current-Amperes versus Lead Temperature-c Vv instantaneous Forward Current-Amperes versus instantaneous Forward Voltage-Volts Figure 3 Typical Junction Capacitance 200 100 60 40 20 pF 10 1 2 4 1 2 4 10 20 40 100 400 1000 v Junction Capacitance-pF versus Reverse Voltagd-v JINAN GUDE ELECTRONIC DEVICE Co., LTD. GD RATINGS AND CHARACTERISTIC CURVES (FS1A THRU FS1M) Figure 4 - Maximum Non - repetitive forward Surge Current 60 Cycles Peak Forward Surge Current-Amperes versus Number of Cycles At 60Hz-Cycles Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram Tra I p00 toa +0.5A PULSE 0 F 25Voe ENOTE 2) |. -0.25A 10 OSCILLOSCOPE (NOTE 1) NOTES: 1 Rise Time=7 ns max. Input Impedance= 4. -1.0A 1 megohm 22pF 2 Rise Time=1 Ons max. Source Impedance= 50 ohms SET TIME BASE FOR 3 Resistors are non-inductive 50/200nsicm SUGGESTED SOLDER PAD LAYOUT --. 0.078" | 0.058" | 0.070" JINAN GUDE ELECTRONIC DEVICE CO., LTD.