XP152A12C0MR PowerMOSFET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package General Description Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems Features The XP152A12C0MR is a P-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.3 ( Vgs = -4.5V ) resistance and ultra high-speed switching characteristics. Rds (on) = 0.5 ( Vgs = -2.5V ) Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching set thereby saving energy. Gate Protect Diode Built-in In order to counter static, a gate protect diode is built-in. Operational Voltage : -2.5V The small SOT-23 package makes high density mounting possible. High density mounting : SOT - 23 Pin Configuration Pin Assignment u D 3 FUNCTION PIN NUMBER PIN NAME 1 G Gate 2 S Source 3 D Drain 2 S 1 G SOT - 23 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC RATINGS UNITS Vdss Vgss Id Idp Idr Pd -20 + 12 -0.7 -2.8 -0.7 0.5 V V A A A W Channel Temperature Tch 150 O C Storage Temperature Tstg -55 to 150 O C PARAMETER 3 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Power Dissipation (note) 2 1 P - Channel MOS FET ( 1 device built-in ) 474 ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics PARAMETER SYMBOL CONDITIONS MIN TYP MAX Ta=25C UNITS Drain Cut-off Current Idss Vds = - 20 , Vgs = 0V - 10 A Gate-Source Leakage Current Igss Vgs = 12 , Vds = 0V 10 A Gate-Source Cut-off Voltage Vgs (off ) - 1.2 V Id = - 0.4A , Vgs = - 4.5V Id = -1mA , Vds = - 10V - 0.5 0.23 0.3 Id = - 0.4A , Vgs = - 2.5V 0.37 0.5 Drain-Source On-state Resistance ( note ) Rds ( on ) Forward Transfer Admittance ( note ) | Yfs | Id = - 0.4A , Vds = - 10V 1.5 Vf If = - 0.7A , Vgs = 0V -0.8 - 1.1 V SYMBOL CONDITIONS TYP MAX Ta=25C UNITS Body Drain Diode Forward Voltage S ( note ) : Effective during pulse test. Dynamic characteristics PARAMETER MIN Input Capacitance Ciss 180 pF Output Capacitance Coss Crss Vds = - 10V , Vgs = 0V 120 f = 1 MHz 60 pF pF PARAMETER SYMBOL CONDITIONS Turn-on Delay Time td ( on ) Rise Time Turn-off Delay Time tr td ( off ) Fall Time tf Feedback Capacitance u Switching characteristics MIN TYP MAX Ta=25C UNITS 5 ns Vgs = - 5V , Id = - 0.4A 20 ns Vdd = - 10V 55 ns ns 70 Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic MIN TYP 250 MAX UNITS C / W PCB 475 XP152A12C0MR PowerMOSFET Electrical Characteristics Drain Current vs. Drain/Source Voltage Ta=25,PulseTest -3 25 -2.5 -2.5V -4.5V DrainCurrent:Id(A) -3V -4V -2 Vds=-10V,PulseTest -3 -3.5V -5V -2.5 DrainCurrent:Id(A) Drain Current vs. Gate/Source Voltage -1.5 -2V -1 -0.5 Ta=-55 -2 125 -1.5 -1 -0.5 Vgs=-1.5V 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 0 Drain/SourceVoltage:Vds(V) 0.6 Id=-0.7A 0.4 -0.4A 0.2 -2.5 -3 Ta=25,PulseTest Vgs=-2.5V -4.5V 0.1 0 -2 -4 -6 -8 -10 0 -0.5 -1 Gate/SourceVoltage:Vgs(V) Id=-0.7A Vgs=-2.5V -0.4A -0.4A,-0.7A 0.2 -4.5V 0 -50 0 50 100 AmbientTemp.:Topr() -2.5 -3 150 Vds=-10V,Id=-1mA 0.4 Gate/SourceCut-OffVoltageVariance :Vgs(off)Variance(V) 0.6 0.4 -2 Gate/Source Cut off Voltage Variance vs. Ambient Temperature PulseTest 0.8 -1.5 DrainCurrent:Id(A) Drain/Source On State Resistance vs. Ambient Temperature Drain/SourceOnStateResistance :Rds(on)() -2 1 0 476 -1.5 Drain/Source On State Resistance vs. Drain Current Ta=25,PulseTest Drain/SourceOnStateResistance :Rds(on)() Drain/SourceOnStateResistance :Rds(on)() u -1 Gate/SourceVoltage:Vgs(V) Drain/Source On State Resistance vs. Gate/Source Voltage 0.8 -0.5 0.2 0 -0.2 -0.4 -50 0 50 100 AmbientTemp.:Topr() 150 Electrical Characteristics Capacitancevs.Drain/SourceVoltage Vgs=-5V,Vdd-10V,PW=10s,duty1%,Ta=25 10000 SwitchingTime:t(ns) 1000 Capacitance:C(pF) SwitchingTimevs.DrainCurrent Vgs=0V,f=1MHz,Ta=25 Ciss Coss 100 Crss 10 1000 tf 100 td(off) tr 10 td(on) 1 0 -5 -10 -15 -20 0 -0.5 Drain/SourceVoltage:Vds(V) -2 ReverseDrainCurrentvs.Source/DrainVoltage Vds=-10V,Id=-0.7A,Ta=25 Ta=25,PulseTest -3 ReverseDrainCurrent:Idr(A) Gate/SourceVoltage:Vgs(V) -1.5 DrainCurrent:Id(A) Gate/SourceVoltagevs.GateCharge -10 -1 -8 -6 -4 -2 -2.5 -4.5V -2 u -2.5V -1.5 -1 Vgs=0V,4.5V -0.5 0 0 0 2 4 6 8 10 0 GateCharge:Qg(nc) -0.2 -0.4 -0.6 -0.8 -1 Source/DrainVoltage:Vsd(V) StandardizedTransitionThermalResistance:s(t) StandardizedTransitionThermalResistancevs.PulseWidth Rth(ch-a)=250/W(implementedonaceramicPCB) 1 Single Pulse 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 PulseWidth:PW(s) 477