XP152A12C0MR PowerMOSFET
474
u
◆
P-Channel Power MOS FET ■
Applications
◆
DMOS Structure ●Notebook PCs
◆
Low On-State Resistance : 0.3Ω (max) ●Cellular and portable phones
◆
Ultra High-Speed Switching ●On - board power supplies
◆
Gate Protect Diode Built-in ●Li - ion battery systems
◆
SOT - 23 Package
■
General Description ■
Features
The XP152A12C0MR is a P-Channel Power MOS FET with low on-state Low on-state resistance :
Rds (on) = 0.3Ω ( Vgs = -4.5V )
resistance and ultra high-speed switching characteristics. Rds (on) = 0.5Ω ( Vgs = -2.5V )
Because high-speed switching is possible, the IC can be efficiently Ultra high-speed switching
set thereby saving energy. Gate Protect Diode Built-in
In order to counter static, a gate protect diode is built-in. Operational Voltage : -2.5V
The small SOT-23 package makes high density mounting possible. High density mounting : SOT - 23
■
Pin Configuration ■
Pin Assignment
PIN NUMBER PIN NAME
G Gate
S Source
D Drain
■
Equivalent Circuit ■
Absolute Maximum Ratings Ta=25OC
SYMBOL RATINGS UNITS
Vdss -20 V
Vgss + 12 V
Id -0.7 A
Idp -2.8 A
Idr -0.7 A
Pd 0.5 W
Tch 150 OC
Tstg -55 to 150 OC
P - Channel MOS FET
( 1 device built-in ) ( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
FUNCTION
2
PARAMETER
1
3
SOT - 23 Top View
1
2
3
G
D
S
12
3
475
u
■ Electrical Characteristics
DC characteristics Ta=25°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Drain Cut-off Current Idss Vds = - 20 , Vgs = 0V - 10 µA
Gate-Source Leakage Current Igss Vgs = ± 12 , Vds = 0V ± 10 µA
Gate-Source Cut-off Voltage Vgs (off ) Id = -1mA , Vds = - 10V - 0.5 - 1.2 V
Drain-Source On-state Resistance Id = - 0.4A , Vgs = - 4.5V 0.23 0.3 Ω
( note ) Id = - 0.4A , Vgs = - 2.5V 0.37 0.5 Ω
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic characteristics
Ta=25°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Capacitance Ciss 180 pF
Output Capacitance Coss Vds = - 10V , Vgs = 0V 120 pF
Feedback Capacitance Crss f = 1 MHz 60 pF
Switching characteristics
Ta=25°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Turn-on Delay Time td ( on ) 5 ns
Rise Time tr Vgs = - 5V , Id = - 0.4A 20 ns
Turn-off Delay Time td ( off ) Vdd = - 10V 55 ns
Fall Time tf 70 ns
Thermal characteristics
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Thermal Resistance Implement on a ceramic
( channel - surroundings ) PCB °C / W
250
Rth ( ch - a )
Vf If = - 0.7A , Vgs = 0V V-0.8 - 1.1
Id = - 0.4A , Vds = - 10V| Yfs |
Rds ( on )
S1.5
XP152A12C0MR PowerMOSFET
476
u
-3
-2.5
-2
-1.5
-1
-0.5
0
-3-2.5-2-1.5-1-0.50
Ta=25℃,PulseTest
-2V
-2.5V
-3V
-4.5V
-4V
-5V -3.5V
-3
-2.5
-2
-1.5
-1
-0.5
0
-3-2.5-2-1.5-1-0.50
125℃
25℃
0
0.2
0.4
0.6
0.8
-10-8-6-4-20
Ta=25℃,PulseTest
-0.4A
0.1
1
-3-2.5-2-1.5-1-0.50
Vgs=-2.5V
-4.5V
■ Electrical Characteristics
Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage
Drain/Source On State Resistance vs. Drain Current
Drain/Source On State Resistance vs. Gate/Source Voltage
Drain/SourceVoltage:Vds(V) Gate/SourceVoltage:Vgs(V)
DrainCurrent:Id(A)
DrainCurrent:Id(A)
Vds=-10V,PulseTest
Ta=25℃,PulseTest
Drain/SourceOnStateResistance
:Rds(on)(Ω)
Drain/SourceOnStateResistance
:Rds(on)(Ω)
Gate/SourceVoltage:Vgs(V) DrainCurrent:Id(A)
Id=-0.7A
Ta=-55℃
Vgs=-1.5V
0
0.2
0.4
0.6
0.8
-50 0 50 100 150
-4.5V
-0.4A,-0.7A
-0.4
-0.2
0
0.2
0.4
-50 0 50 100 150
Vgs=-2.5V
PulseTest
Id=-0.7A
-0.4A
Gate/SourceCut-OffVoltageVariance
:Vgs(off)Variance(V)
Vds=-10V,Id=-1mA
Gate/Source Cut off Voltage Variance vs. Ambient Temperature
AmbientTemp.:Topr(℃)AmbientTemp.:Topr(℃)
Drain/SourceOnStateResistance
:Rds(on)(Ω)
Drain/Source On State Resistance vs. Ambient Temperature
477
u
10
100
1000
-20-15-10-50
Vgs=0V,f=1MHz,Ta=25℃
Capacitance:C(pF)
Coss
Ciss
Crss
1
10
100
1000
10000
-2-1.5-1-0.50
tr
td(on)
td(off)
tf
■ Electrical Characteristics
Drain/SourceVoltage:Vds(V) DrainCurrent:Id(A)
SwitchingTime:t(ns)
Vgs=-5V,Vdd≒-10V,PW=10μs,duty≦1%,Ta=25℃
SwitchingTimevs.DrainCurrent
Capacitancevs.Drain/SourceVoltage
-10
-8
-6
-4
-2
0
0246810
-3
-2.5
-2
-1.5
-1
-0.5
0
-1-0.8-0.6-0.4-0.20
Vgs=0V,4.5V
-4.5V
-2.5V
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
StandardizedTransitionThermalResistancevs.PulseWidth
PulseWidth:PW(s)
StandardizedTransitionThermalResistance:γs(t)
Single Pulse
GateCharge:Qg(nc) Source/DrainVoltage:Vsd(V)
Gate/SourceVoltage:Vgs(V)
ReverseDrainCurrent:Idr(A)
Vds=-10V,Id=-0.7A,Ta=25℃
Gate/SourceVoltagevs.GateCharge ReverseDrainCurrentvs.Source/DrainVoltage
Ta=25℃,PulseTest
Rth(ch-a)=250℃/W(implementedonaceramicPCB)