A Product Line of Diodes Incorporated ZXTC2045E6 30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Mechanical Data * NPN + PNP Combination * Case: SOT26 * BVCEO > 30 (-30)V * Case Material: Molded Plastic, "Green" Molding Compound; * BVCEV > 40 (-40)V * ICM = 5 (-5)A Peak Pulse Current * Moisture Sensitivity: Level 1 per J-STD-020 * * * * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) * Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 * Weight: 0.015 grams (Approximate) UL Flammability Classification Rating 94V-0 Description Applications Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. * * SOT26 MOSFET and IGBT Gate Driving Motor Drive C1 C2 B2 B1 Q1 Q2 E1 Top View E2 C1 E1 B1 B2 C2 E2 Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product ZXTC2045E6TA ZXTC2045E6QTA Notes: Compliance AEC-Q101 Automotive Marking 2045 2045 Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/ for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com Marking Information SOT26 2045 Date Code Key Year 2015 Code C Month Code 2016 D Jan 1 2017 E Feb 2 ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 Mar 3 2018 F Apr 4 YM ADVANCE INFORMATION Features 2019 G May 5 2045 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) 2020 H Jun 6 1 of 6 www.diodes.com 2021 I Jul 7 2022 J Aug 8 2023 K Sep 9 Oct O 2024 L Nov N 2025 M Dec D March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 ADVANCE INFORMATION Absolute Maximum Ratings - Q1 (NPN Transistor) (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current Symbol VCBO VCEV VCEO VEBO IC ICM IB Value 40 40 30 7 1.5 5 1 Unit V V V V A A A Absolute Maximum Ratings - Q2 (PNP Transistor) (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current Symbol VCBO VCEV VCEO VEBO IC ICM IB Value -40 -40 -30 -7 -1.5 -5 -1 Unit V V V V A A A Value 0.7 5.6 0.9 7.2 1.1 8.8 1.1 8.8 1.7 13.6 179 139 113 113 73 95.50 -55 to +150 Unit Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Notes 6 & 10) (Notes 7 & 10) Power Dissipation Linear Derating Factor (Notes 7 & 11) PD (Notes 8 & 10) (Notes 9 & 10) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range (Notes 6 & 10) (Notes 7 & 10) (Notes 7 & 11) (Notes 8 & 10) (Notes 9 & 10) (Note 12) RJA RJL TJ, TSTG W mW/C C/W C ESD Ratings (Note 13) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper. 9. Same as Note 8, except the device is measured at t < 5 seconds. 10. For device with one active die, both collectors attached to a common heatsink. 11. For device with two active die running at equal power, split heatsink 50% to each collector. 12. Thermal resistance from junction to solder-point (at the end of the collector lead). 13. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 2 of 6 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 ADVANCE INFORMATION Thermal Characteristics and Derating Information ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 3 of 6 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 ADVANCE INFORMATION Electrical Characteristics - Q1 (NPN Transistor) (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 14) Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 14) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time Symbol Min Typ Max Unit Test Condition BVCBO BVCEV BVCEO BVEBO ICBO ICES/R IEBO 40 40 30 7 8.3 <1 <1 <1 20 20 20 V V V V nA nA nA IC = 100A, IE = 0 IC = 1A, 0.25V > VBE > 1.0V IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 32V VCE = 16V, R 1k VEB = 6V hFE VCE(sat) VBE(sat) 180 300 500 375 1,200 mV mV IC = 100mA, VCE = 2V IC = 750mA, IB = 15mA IC = 750mA, IB = 15mA Cobo fT td tr ts tf 9 265 10 12 185 45 20 pF MHz ns ns ns ns VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 1A IB1 = -IB2 = 50mA Electrical Characteristics - Q2 (PNP Transistor) (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 14) Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 14) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time Note: Symbol Min Typ Max Unit Test Condition BVCBO BVCEV BVCEO BVEBO ICBO ICES/R IEBO -40 -40 -30 -7 -8.3 <-1 <-1 <-1 -20 -20 -20 V V V V nA nA nA IC = -100A, IE = 0 IC = -1A, 0.25V < VBE < 1.0V IC = -10mA, IB = 0 IE = -100A, IC = 0 VCB = -32V VCE = -16V, R 1k VEB = -6V hFE VCE(sat) VBE(sat) 180 300 500 -375 -1,200 mV mV IC = -100mA, VCE = -2V IC = -750mA, IB = -15mA IC = -750mA, IB = -15mA Cobo fT td tr ts tf 9 195 16 11 220 31 20 pF MHz ns ns ns ns VCB = -10V, f = 1.0MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V, IC = -1A IB1 = -IB2 = -50mA 14. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 4 of 6 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D E1 SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e 0.95 e1 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a 8 a1 7 All Dimensions in mm E b a1 e1 A2 A3 A1 Seating Plane e a L c Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C1 Y1 G C Y Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 X ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 5 of 6 www.diodes.com March 2015 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXTC2045E6 Document Number: DS33645 Rev: 3 - 2 6 of 6 www.diodes.com March 2015 (c) Diodes Incorporated