ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26
Features
• NPN + PNP Combination
• BV
CEO
> 30 (-30)V
• BV
CEV
> 40 (-40)V
• I
CM
= 5 (-5)A Peak Pulse Current
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Description
Advanced process capability is used to achieve this high performance
device. Combining NPN and PNP transistors, the SOT26 package
provides a compact solution for the intended applications.
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
• Weight: 0.015 grams (Approximate)
Applications
• MOSFET and IGBT Gate Driving
• Motor Drive
Ordering Information
(Notes 4 & 5)
Product
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTC2045E6TA
AEC-Q101 2045 7 8 3,000
ZXTC2045E6QTA
Automotive 2045 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
C D E F G H I J K L M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Device Symbol
SOT26
Top View
Pin-Out
C
1
E1
B
1
C
2
E2
B2
Q1 Q2
C
1
B1
C
2
E1
B2
E2
YM
2045
2045 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
SOT26
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
2 of 6
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March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
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Absolute Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CE
V
40 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
1.5 A
Peak Pulsed Collector Current I
CM
5 A
Base Current I
B
1 A
Absolute Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CE
V
-40 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-1.5 A
Peak Pulsed Collector Current I
CM
-5 A
Base Current I
B
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P
D
0.7
5.6
W
mW/°C
(Notes 7 & 10) 0.9
7.2
(Notes 7 & 11) 1.1
8.8
(Notes 8 & 10) 1.1
8.8
(Notes 9 & 10) 1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 10)
R
θJA
179
°C/W
(Notes 7 & 10) 139
(Notes 7 & 11) 113
(Notes 8 & 10) 113
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12) R
θ
JL
95.50
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 13)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8, except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active die running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
13. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
3 of 6
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March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
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Thermal Characteristics and Derating Information
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
4 of 6
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ZXTC2045E6
ADVANCE INFO R MA T I O N
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Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF
CHARACTERISTICS
Collector-Base Breakdown Voltage BV
CBO
40 - V I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CE
V
40 - V I
C
= 1µA, 0.25V > V
BE
> 1.0V
Collector-Emitter Breakdown Voltage (Note 14) BV
CEO
30 - V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
7 8.3 V I
E
= 100µA, I
C
= 0
Collector Cut-Off Current I
CBO
<1 20 nA V
CB
= 32V
Collector Cut-Off Current I
CE
S/R
<1 20 nA V
CE
= 16V, R
≤ 1kΩ
Emitter Cut-Off Current I
EBO
<1 20 nA V
E
B
= 6V
ON CHARACTERISTICS
(Note 14)
DC Current Gain h
FE
180 300 500 I
C
= 100mA, V
CE
= 2V
Collector-Emitter Saturation Voltage V
CE(sat)
375 mV I
C
= 750mA, I
B
= 15mA
Base-Emitter Saturation Voltage V
BE(sat)
1,200 mV I
C
= 750mA, I
B
= 15mA
SMALL SIGNAL
CHARACTERISTICS
Output Capacitance C
obo
9 20 pF V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
265 MHz V
CE
= 10V, I
C
= 50mA, f = 100MHz
Delay Time t
d
10 ns
V
CC
= 10V, I
C
= 1A
I
B1
= -I
B2
= 50mA
Rise Time t
r
12 ns
Storage Time t
s
185 ns
Fall Time t
f
45 ns
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BV
CBO
-40 - V I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CE
V
-40 - V I
C
= -1µA, 0.25V < V
BE
< 1.0V
Collector-Emitter Breakdown Voltage (Note 14) BV
CEO
-30 - V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.3 V I
E
= -100µA, I
C
= 0
Collector Cut-Off Current I
CBO
<-1 -20 nA V
CB
= -32V
Collector Cut-Off Current I
CES/R
<-1 -20 nA V
CE
= -16V, R
≤ 1kΩ
Emitter Cut-Off Current I
EBO
<-1 -20 nA V
EB
= -6V
ON CHARACTERISTICS
(Note 14)
DC Current Gain h
FE
180 300 500 I
C
= -100mA, V
CE
= -2V
Collector-Emitter Saturation Voltage V
CE(sat)
-375 mV I
C
= -750mA, I
B
= -15mA
Base-Emitter Saturation Voltage V
BE(sat)
-1,200 mV I
C
= -750mA, I
B
= -15mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
9 20 pF V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
195 MHz V
CE
= -10V, I
C
= -50mA, f = 100MHz
Delay Time t
d
16 ns
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -50mA
Rise Time t
r
11 ns
Storage Time t
s
220 ns
Fall Time t
f
31 ns
Note: 14. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
5 of 6
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March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A
2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
0.10
0.20
0.15
D
2.90
3.10
3.00
- - 0.95
e1
- - 1.90
E
2.70
3.00
2.80
E
1.50
1.70
1.60
L
0.35
0.55
0.40
- - 8°
a1
- - 7°
All Dimensions in mm
Dimensions
Value (in mm)
C
2.40
C
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
C1
Y1 G
X
Y
C
ZXTC2045E6
Document Number: DS33645 Rev: 3 - 2
6 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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