ESMBJ SERIES
SMB
All Dimensions in millimeter
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.06 4.57
3.94 3.30
1.96 2.21
0.31 0.15
5.21 5.59
0.05 0.20
2.01 2.50
0.76 1.52
C
B
A
H
E
F
G
D
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
For Electric Meter
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
REVERSE VOLTAGE -
6.8
to
200
Volts
POWER DISSIPATION -
600
WATTS
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above T
J
= 25
℃
per fig.1.
2. Only for unidirectional units.
3. Thermal resistance from junction to ambient, lead and case.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
SEMICONDUCTOR
LITE-ON
REV. 0, Sep-2011, KSIB05
I
FSM
Peak Forward Surge Current 8.3ms single
half sine-wave@Tj=25 (Note 2)
℃
80
AMPS.
UNIT
P
M(AV)
1.5
WATTS
Steady State Power Dissipation at T
L
=120 lead
℃
lenghts 0.375" (9.5mm) , see fig.4
Without Heatshink
P
PK
WATTS
PEAK POWER DISSIPATION AT T
J
= 25 ,
℃
TP = 1ms (Note 1)
SYMBOLS VALUE
600
CHARACTERISTICS
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only
V
F
3.5 Volts
R
0JL
Typical Thermal Resistance (Note 3)
90
21
25
C/W
R
0JA
R
0JC
T
J
Operating Temperature Range
-55 to +175
T
STG
Storage Temperature Range
-55 to +175
C
C
10
100
1000
10000
1 10 100 1000
RATING AND CHARACTERISTIC CURVES
ESMBJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK PULSE DERATING IN % OFPEAK
POWER OR CURRENT
25 75 100 125 150
0
50
50
100
0175
75
25
200
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT, (A)
15 10 50 100
220
0
20
Pulse Width 8.3ms
Single Half-Sine-Wave
40
60
80
100
120
FIG.4 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE, (V)
Bi-directional
T
J
= 25 , f=1MHz
℃
Uni-directional
PM
(AV)
STEADY STATE POWER DISSIPATION (W)
FIG.6 - STEADY STATE POWER DERATING CURVE
T
L
, LEAD TEMPERATURE
( )
℃
25 75 100 125 150
0.0
50 175 200
0.5
1.0
1.5
2.0
2.5
JUNCTION TEMPERATURE, ( )
℃
FIG.5 - PULSE RATING CURVE
P
P
, PEAK POWER ( K
W
)
T
P
, PULSE WIDTH
0.1
1.0
10
0.1us 1.0us 10us 100us 1.0ms 10ms
100
T
A
=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
FIG.3 - PULSE WAVEFORM
0
0
I
P,
PEAK PULSE CURRENT (% )
T, TIME ( ms )
50
100
1.0 2.0 3.0 4.0
T
R
=10us
Peak value (I
RSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (T
P
) is defined
as that point where the
peak current decays to
50% of I
RSM
T
J
=25 C
I
RSM
2
Half value=
0
Type
Number
Type
Number
Reverse
Standoff
Voltage
Max.
Reverse
Leakage
@VR
Max.
Peak
Pulse
Current
Max.
Clamping
Voltage
@Ipp
Max. Voltage
Temp.
Variation
of Bv
(UNI) (BI) (UNI) (BI) VR (V) Min (V) Max (V) It (mA) IR (uA) Ipp (A) Vc (V) %/℃
ESMBJ6.8A ESMBJ6.8CA E6V8A E6V8C 5.8 6.45 7.13 10 1000 57.1 10.5 0.057
ESMBJ7.5A ESMBJ7.5CA E7V5A E7V5C 6.4 7.13 7.88 10 500 53.1 11.3 0.061
ESMBJ8.2A ESMBJ8.2CA E8V2A E8V2C 7.0 7.79 8.61 10 200 49.6 12.1 0.065
ESMBJ9.1A ESMBJ9.1CA E9V1A E9V1C 7.8 8.65 9.56 1 50 44.8 13.4 0.068
ESMBJ10A ESMBJ10CA E10A E10C 8.6 9.50 10.50 1 10 41.4 14.5 0.073
ESMBJ11A ESMBJ11CA E11A E11C 9.4 10.5 11.6 1 5 38.5 15.6 0.075
ESMBJ12A ESMBJ12CA E12A E12C 10.2 11.4 12.6 1 5 35.9 16.7 0.078
ESMBJ13A ESMBJ13CA E13A E13C 11.1 12.4 13.7 1 5 33.0 18.2 0.081
ESMBJ15A ESMBJ15CA E15A E15C 12.8 14.3 15.8 1 5 28.3 21.2 0.084
ESMBJ16A ESMBJ16CA E16A E16C 13.6 15.2 16.8 1 5 26.7 22.5 0.086
ESMBJ18A ESMBJ18CA E18A E18C 15.3 17.1 18.9 1 5 23.8 25.2 0.088
ESMBJ20A ESMBJ20CA E20A E20C 17.1 19.0 21.0 1 5 21.7 27.7 0.090
ESMBJ22A ESMBJ22CA E22A E22C 18.8 20.9 23.1 1 5 19.6 30.6 0.092
ESMBJ24A ESMBJ24CA E24A E24C 20.5 22.8 25.2 1 5 18.1 33.2 0.094
ESMBJ27A ESMBJ27CA E27A E27C 23.1 25.7 28.4 1 5 16.0 37.5 0.096
ESMBJ30A ESMBJ30CA E30A E30C 25.6 28.5 31.5 1 5 14.5 41.4 0.097
ESMBJ33A ESMBJ33CA E33A E33C 28.2 31.4 34.7 1 5 13.1 45.7 0.098
ESMBJ36A ESMBJ36CA E36A E36C 30.8 34.2 37.8 1 5 12.0 49.9 0.099
ESMBJ39A ESMBJ39CA E39A E39C 33.3 37.1 41.0 1 5 11.1 53.9 0.100
ESMBJ43A ESMBJ43CA E43A E43C 36.8 40.9 45.2 1 5 10.1 59.3 0.101
ESMBJ47A ESMBJ47CA E47A E47C 40.2 44.7 49.4 1 5 9.3 64.8 0.101
ESMBJ51A ESMBJ51CA E51A E51C 43.6 48.5 53.6 1 5 8.6 70.1 0.102
ESMBJ56A ESMBJ56CA E56A E56C 47.8 53.2 58.8 1 5 7.8 77.0 0.103
ESMBJ62A ESMBJ62CA E62A E62C 53.0 58.9 65.1 1 5 7.1 85.0 0.104
ESMBJ68A ESMBJ68CA E68A E68C 58.1 64.6 71.4 1 5 6.5 92.0 0.104
ESMBJ75A ESMBJ75CA E75A E75C 64.7 71.3 78.8 1 5 5.8 103.0 0.105
ESMBJ82A ESMBJ82CA E82A E82C 70.1 77.9 86.1 1 5 5.3 113.0 0.105
ESMBJ91A ESMBJ91CA E91A E91C 77.8 86.5 95.6 1 5 4.8 125.0 0.106
ESMBJ100A ESMBJ100CA E100A E100C 85.5 95.0 105.0 1 5 4.4 137.0 0.106
ESMBJ110A ESMBJ110CA E110A E110C 94.0 105.0 116.1 1 5 3.9 152.0 0.107
ESMBJ120A ESMBJ120CA E120A E120C 102.0 114.0 126.0 1 5 3.6 165.0 0.107
ESMBJ130A ESMBJ130CA E130A E130C 111.0 124.0 137.1 1 5 3.4 179.0 0.107
ESMBJ150A ESMBJ150CA E150A 150C 128.0 143.0 158.1 1 5 2.9 207.0 0.108
ESMBJ160A ESMBJ160CA E160A E160C 136.0 152.0 168.0 1 5 2.7 219.0 0.108
ESMBJ170A ESMBJ170CA E170A E170C 145.0 162.0 179.1 1 5 2.6 234.0 0.108
ESMBJ180A ESMBJ180CA E180A E180C 154.0 171.0 189.0 1 5 2.4 246.0 0.108
ESMBJ200A ESMBJ200CA E200A E200C 171.0 190.0 210.0 1 5 2.2 274.0 0.108
NOTE :
Suffix 'C' denotes bidirectional device. Suffix 'A' denotes 5% tolerance device.
1. For bidirectional devices having VR of 10 volts and under, the IR limit is doubled .
Breakdown Voltage
BV Volts @It
Device Marking
code
SEMICONDUCTOR
LITE-ON
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ESMBJ SERIES
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