STPR805DFSTPR860DF VISHAY 8.0A SuperFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction drop Surge overload rating to 125A peak Low reverse leakage current Vishay Lite-On Power Semiconductor Super-fast switching times for high efficiency High current capability and low forward voltage Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings Tj = 25C 94 9537 Repetitive peak reverse voltage STPR805DF | Varn 50 Vv =Working peak reverse voltage STPR810DF | =Vrawm 100 Vv =DC Blocking voltage STPR815DF =VR 150 V STPR820DF 200 Vv STPR830DF 300 Vv STPR840DF 400 Vv STPR850DF 500 Vv STPR860DF 600 Vv Peak forward surge current lesm 125 A Average forward current Tce=100C lFay 8 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IF=8A STPR805DF-820DF Ve 0.9 STPR830DF-840DF Ve 1.3 STPR850DF-860DF Ve 1.5 Reverse current Tce=25C IR 5 Tce=100C IR 500 | pA Reverse recovery time |IF=1A, IR=0.5A, STPR805DF-820DF tr 35 ns rr=0.25A STPR830DF-860DF ter 50 | ns Diode capacitance VpR=4V, f=1MHz | STPR805DF-840DF Cp 85 pF STPR850DF-860DF Cp 60 pF Thermal resistance Rthuc 6.3 KAW junction to case Rev. A2, 24-Jun-98 STPR805DF-STPR860DF wa Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 10 400 500V-600V 100 50V-400V leay Average Forward Current (A) nN 1 Cp Diode Capacitance ( pF ) 0 50 100 150 0.1 1.0 10 100 15442 Tamb Ambient Temperature ( C ) 15445 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 IF Pulse Width = 300 ps 100 2% Duty Cycle _~ <x < = = 10 5 10 8 8 zg 2 1.0 2 S P 10 ia I at - 01 s0v- _/ 300v-_f s500v- Tj = 25C 200ov f 400v 600V 0.1 0.01 0.2 0.6 1.0 14 0 40 80 120 15443 Ve Forward Voltage ( V ) 15447 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage x 150 Tro TTTT TTT x 8.3 ms Single Half-Sine-Wave < JEDEC method Oo 125 5 Oo 8, 100 N D N % 5 p> 7 wv oN | 5 uw 50 < mM AU S25 S iP _ 0 1 10 100 15444 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 . STPR805DF-STPR860DF VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AC Dim Min Max pt | A | 14.22 15.88 Ad WJ TT ~ B 9.65 10.67 | | ( 254 3.43 . Lae of 5.84 6.86 wa | E - 6.25 a G 17.70 14.73 a) 1) 051 11h | K | 63.53 04.09 bo L 356 ,.B3 s ! M 114 1.40 N 0.30 0.64 Pp 2.03 2.9) l R i, 83 5.33 ALL Dimensions in mm N J P R PIN 1 + Q_, 1 acorag fo ON p 14469 PIN 2 - Q>_Ssiase Case positive Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) STPR805DF-STPR860DF Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98