TPS743xx
TPS743xx
500mV/div
Time(20ms/div)
VPG
VTRACK
I =500mA
OUT
VOUT
R1
R5
R3
R4
R2
VOUT
COUT
Optional
PG
OUT
FB
IN
BIAS
TRACK
GND
VIN
VBIAS
CIN
CBIAS
VTRACK
VPG
TPS74301
EN
ADJUSTABLEVOLTAGEVERSION
R5
R3
R4
VOUT
COUT
Optional
PG
OUT
SNS
IN
BIAS
TRACK
GND
VIN
VBIAS
CIN
CBIAS
VTRACK
VPG
TPS743xx
EN
FIXEDVOLTAGEVERSION
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
1.5A Ultra-LDO with Programmable Sequencing
Check for Samples: TPS743xx
1FEATURES DESCRIPTION
2 Track Pin Allows for Flexible Power-Up The TPS743xx low-dropout (LDO) linear regulators
Sequencing provide an easy-to-use robust power management
1% Accuracy Over Line, Load, and solution for a wide variety of applications. The
Temperature TRACK pin allows the output to track an external
Supports Input Voltages as Low as 0.9V with supply. This feature is useful in minimizing the stress
External Bias Supply on ESD structures that are present between the
CORE and I/O power pins of many processors. The
Adjustable Output (0.8V to 3.6V) enable input and power-good output allow easy
Fixed Output (0.9V to 3.6V) sequencing with external regulators. This complete
Ultra-Low Dropout: 55mV at 1.5A (typ) flexibility allows the user to configure a solution that
meets the sequencing requirements of FPGAs,
Stable with Any or No Output Capacitor DSPs, and other applications with special start-up
Excellent Transient Response requirements.
Available in 5mm × 5mm × 1mm QFN and A precision reference and error amplifier deliver 1%
DDPAK-7 Packages accuracy over load, line, temperature, and process.
Open-Drain Power-Good (5 × 5 QFN) Each LDO is stable with low-cost ceramic output
Active High Enable capacitors and the family is fully specified from –40°C
to +125°C. The TPS743xx is offered in a small (5mm
× 5mm) QFN package, yielding a highly compact total
APPLICATIONS solution size. For applications that require additional
FPGA Applications power dissipation, the DDPAK (KTW) package is also
DSP Core and I/O Voltages available.
Post-Regulation Applications
Applications with Special Start-Up Time or
Sequencing Requirements
Figure 1. Tracking Response
Figure 2. Typical Application Circuit
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2005–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
PRODUCT VOUT (2)
TPS743xx yyy z XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable).(3)
YYY is package designator.
Zis package quantity.
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) Output voltages from 0.9V to 1.5V in 50mV increments and 1.5V to 3.3V in 100mV increments are available through the use of
innovative factory EEPROM programming; minimum order quantities may apply. Contact factory for details and availability.
(3) For fixed 0.8V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS(1)
At TJ= –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND.
TPS743xx UNIT
VIN, VBIAS Input voltage range –0.3 to +6 V
VEN Enable voltage range –0.3 to +6 V
VPG Power-good voltage range –0.3 to +6 V
IPG PG sink current 0 to +1.5 mA
VTRACK Track pin voltage range –0.3 to +6 V
VFB Feedback pin voltage range –0.3 to +6 V
VOUT Output voltage range –0.3 to VIN + 0.3 V
IOUT Maximum output current Internally limited
Output short circuit duration Indefinite
PDISS Continuous total power dissipation See Thermal Information Table
TJOperating junction temperature range –40 to +125 °C
TSTG Storage junction temperature range –55 to +150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
2Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
THERMAL INFORMATION TPS743xx(2)
THERMAL METRIC(1) UNITS
RGW (20 PINS) KTW (7 PINS)
qJA Junction-to-ambient thermal resistance(3) 30.5 20.1
qJCtop Junction-to-case (top) thermal resistance(4) 27.6 2.1
qJB Junction-to-board thermal resistance(5) N/A N/A °C/W
yJT Junction-to-top characterization parameter(6) 0.37 4.2
yJB Junction-to-board characterization parameter(7) 10.6 6.1
qJCbot Junction-to-case (bottom) thermal resistance(8) 4.1 1.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A.
(2) Thermal data for the RGW and KTW packages are derived by thermal simulations based on JEDEC-standard methodology as specified
in the JESD51 series. The following assumptions are used in the simulations:
(a) i. RGW: The exposed pad is connected to the PCB ground layer through a 4x4 thermal via array.
-ii. KTW: The exposed pad is connected to the PCB ground layer through a 6x6 thermal via array.
(b) Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage.
(c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To
understand the effects of the copper area on thermal performance, refer to the Power Dissipation and Estimating Junction
Temperature sections.
(3) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(4) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(5) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(6) The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data to obtain qJA using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data to obtain qJA using a procedure described in JESD51-2a (sections 6 and 7).
(8) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 3
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
ELECTRICAL CHARACTERISTICS
At VEN = 1.1V, VIN = VOUT + 0.3V, CIN = CBIAS = 0.1mF, COUT = 10mF, IOUT = 50mA, VBIAS = 5.0V, and TJ= –40°C to +125°C,
unless otherwise noted. Typical values are at TJ= +25°C. TPS743xx
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range VOUT + VDO 5.5 V
VBIAS Bias pin voltage range 2.375 5.25 V
VREF Internal reference (Adj.) TJ= +25°C 0.796 0.8 0.804 V
Output voltage range VIN = 5V, IOUT = 1.5A, VBIAS = 5V VREF 3.6 V
VOUT 2.375V VBIAS 5.25V, VOUT + 1.62V VBIAS
Accuracy(1) 1 ±0.2 1 %
50mA IOUT 1.5A
VOUT (NOM) + 0.3 VIN 5.5V, QFN 0.0005 0.05
VOUT/VIN Line regulation %/V
VOUT (NOM) + 0.3 VIN 5.5V, DDPAK 0.0005 0.06
0mA IOUT 50mA 0.013 %/mA
VOUT/IOUT Load regulation 50mA IOUT 1.5A 0.04 %/A
IOUT = 1.5A, VBIAS VOUT (NOM) 1.62V, QFN 55 100
VIN dropout voltage(2) mV
VDO IOUT = 1.5A, VBIAS VOUT (NOM) 1.62V, DDPAK 60 120
VBIAS dropout voltage(2) IOUT = 1.5A, VIN = VBIAS 1.4 V
ICL Current limit VOUT = 80% × VOUT (NOM) 1.8 4 A
IBIAS Bias pin current IOUT = 0mA to 1.5A 2 4 mA
ISHDN Shutdown supply current (VIN) VEN 0.4V 1 100 mA
IFB, ISNS Feedback, Sense pin IOUT = 50mA to 1.5A –250 68 250 nA
current(3)
1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 73
Power-supply rejection dB
(VIN to VOUT)800kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 42
PSRR 1kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 67
Power-supply rejection dB
(VBIAS to VOUT)800kHz, IOUT = 1.5A, VIN = 1.8V, VOUT = 1.5V 50
Noise Output noise voltage 100Hz to 100kHz, IOUT = 1.5A 25 × VOUT mVRMS
%VOUT droop during load
VTRAN IOUT = 50mA to 1.5A at 1A/ms, COUT = none 3.5 %VOUT
transient
tSTR Minimum startup time VTRACK > 0.8V 40 ms
TACC Track pin accuracy 0.2V VTRACK 0.7V, VOUT = 0.8V –60 60 mV
ITR Track pin current VTRACK = 0.4V 0.1 1 mA
VEN, HI Enable input high level 1.1 5.5 V
VEN, LO Enable input low level 0 0.4 V
VEN, HYS Enable pin hysteresis 50 mV
VEN, DG Enable pin deglitch time 20 ms
IEN Enable pin current VEN = 5V 0.1 1 mA
VIT PG trip threshold VOUT decreasing 86.5 90 93.5 %VOUT
VHYS PG trip hysteresis 3 %VOUT
VPG, LO PG output low voltage IPG = 1mA (sinking), VOUT < VIT 0.3 V
IPG, LKG PG leakage current VPG = 5.25V, VOUT > VIT 0.3 1 mA
Operating junction
TJ–40 +125 °C
temperature
Shutdown, temperature increasing +155
Thermal shutdown
TSD °C
temperature Reset, temperature decreasing +140
(1) Adjustable devices tested at 0.8V; external resistor tolerance is not taken into account.
(2) Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal.
(3) IFB, ISNS current flow is out of the device.
4Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
Thermal
Limit
FB
PG
IN
BIAS
TRACK
EN Hysteresis
andDe-Glitch
Current
Limit
UVLO
0.8V
Reference
0.9 V´REF
GND
V <V =1,V >V =0
TRACK REF TRACK REF
VOUT
R1
R2
V =0.8x( )
OUT 1+ R1
R2
1
0
OUT
R1
RSMALL
R2
Thermal
Limit
PG
IN
BIAS
TRACK
EN Hysteresis
andDe-Glitch
Current
Limit
UVLO
0.8V
Reference
0.9 V´REF
GND
V <V =1,V >V =0
TRACK REF TRACK REF
VOUT
1
0
SNS
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
BLOCK DIAGRAMS
Figure 3. Adjustable Voltage Version
Figure 4. Fixed Voltage Versions
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 5
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
Table 1. Standard 1% Resistor Values for Programming the Output Voltage(1)
R1(k) R2(k) VOUT (V)
Short Open 0.8
0.619 4.99 0.9
1.13 4.53 1.0
1.37 4.42 1.05
1.87 4.99 1.1
2.49 4.99 1.2
4.12 4.75 1.5
3.57 2.87 1.8
3.57 1.69 2.5
3.57 1.15 3.3
(1) VOUT = 0.8 × (1 + R1/R2)
6Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
OUT
GND BIAS
IN
FB/
SNS
SS
1 2 3 4 56
EN
7
IN
IN
IN
PG
BIAS
OUT
OUT
OUT
NC
FB/SNS
TPS743xx
IN
EN 11
GND 12
NC 13
NC 14
SS 15
6
7
8
9
10
20
19
18
17
16
5
NC4
NC3
NC2
OUT1
GND
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
PIN CONFIGURATIONS
RGW PACKAGE KTW PACKAGE
5 × 5 QFN-20 DDPAK-7
(TOP VIEW) SURFACE-MOUNT
PIN DESCRIPTIONS
NAME KTW (DDPAK) RGW (QFN) DESCRIPTION
IN 5 5–8 Unregulated input to the device.
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts
EN 7 11 the regulator into shutdown mode. This pin must not be left floating.
Tracking pin. Connect this pin to the center tap of a resistor divider off of an
TRACK 1 15 external supply to program the device to track an external supply.
BIAS 6 10 Bias input voltage for error amplifier, reference, and internal control circuits.
Power-Good (PG) is an open-drain, active-high output that indicates the status
of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a
high-impedance state. When VOUT is below this threshold the pin is driven to a
PG N/A 9 low-impedance state. A pull-up resistor from 10kto 1Mshould be connected
from this pin to a supply up to 5.5V. The supply can be higher than the input
voltage. Alternatively, the PG pin can be left floating if output monitoring is not
necessary.
This pin is the feedback connection to the center tap of an external resistor
FB divider network that sets the output voltage. This pin must not be left floating.
(Adjustable version only.)
2 16 This pin is the sense connection to the load device. This pin must be connected
SNS to VOUT and must not be left floating. (Fixed versions only.)
OUT 3 1, 18–20 Regulated output voltage. No capacitor is required on this pin for stability.
No connection. This pin can be left floating or connected to GND to allow better
NC N/A 2–4, 13, 14, 17 thermal contact to the top-side plane.
GND 4 12 Ground
PAD/TAB Should be soldered to the ground plane for increased thermal performance.
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 7
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-0.1
010 20 30 40
ChangeinV (%)
OUT
I (mA)
OUT
50
+125 C°
+25 C°
-40 C°
ReferredtoI =50mA
OUT
0.05
0.04
0.03
0.02
0.01
0
-0.01
-0.02
-0.03
-0.04
-0.05
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ChangeinV (%)
OUT
V V-
IN OUT (V)
4.5
T = 40- °
JC
TJ=+25°C
TJ=+125°C
100
75
50
25
0
00.5 1.0
DropoutVoltage(mV)
I (A)
OUT
1.5
+125 C°
+25 C°
- °40 C
200
180
160
140
120
100
80
60
40
20
0
0.9 1.4 1.9 2.4 2.9 3.4
DropoutVoltage(mV)
V V-
BIAS OUT (V)
3.9
+125 C°
+25 C°
-40°C
I =1.5A
OUT
60
50
40
30
20
10
0
0.9 1.4 1.9 2.4 2.9 3.4
DropoutVoltage(mV)
V-
BIAS VOUT (V)
3.9
+125 C°
+25 C°
-40°C
I =500mA
OUT
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
TYPICAL CHARACTERISTICS
At TJ= +25°C, VOUT = 1.5V, VIN = VOUT(TYP) + 0.3V, VBIAS = 3.3V, IOUT = 50mA, EN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT = 10mF,
unless otherwise noted. LOAD REGULATION LOAD REGULATION
Figure 5. Figure 6.
VIN DROPOUT VOLTAGE vs
LINE REGULATION IOUT AND TEMPERATURE (TJ)
Figure 7. Figure 8.
VIN DROPOUT VOLTAGE vs VIN DROPOUT VOLTAGE vs
VBIAS VOUT AND TEMPERATURE (TJ) VBIAS VOUT AND TEMPERATURE (TJ)
Figure 9. Figure 10.
8Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
1400
1300
1200
1100
1000
900
800
700
600
500
50 500 1000
DropoutVoltage(mV)
I (mA)
OUT
1500
+125 C°+25 C°
- °40 C
90
80
70
60
50
40
30
20
10
0
Power-SupplyRejection(dB)
10 100 1k 10k 100k 1M 10M
Frequency(Hz)
I =1.5A
OUT
100
90
80
70
60
50
40
30
20
10
0
10 100 1k 10k 100k 1M
Power-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =1.5A
C =0 F
OUT m
C =10 F
OUT m
C =100 F
OUT m
100
90
80
70
60
50
40
30
20
10
0
10 100 1k 10k 100k 1M
Power-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =100mA
C =10 F
OUT m
C =100 F
OUT m
C =0 F
OUT m
90
80
70
60
50
40
30
20
10
0
00.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
Power-SupplyRejectionRatio(dB)
V V-
IN OUT (V)
2.50
1kHz
100kHz
300kHz
700kHz
I =1.5A
OUT
1
0.1
0.01
100 1k 10k
OutputSpectralNoiseDensity(mV/Ö)
Hz
Frequency(Hz)
100k
I =1.5A
OUT
V =1.1V
OUT
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
TYPICAL CHARACTERISTICS (continued)
At TJ= +25°C, VOUT = 1.5V, VIN = VOUT(TYP) + 0.3V, VBIAS = 3.3V, IOUT = 50mA, EN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT =
10mF, unless otherwise noted.
VBIAS DROPOUT VOLTAGE vs
IOUT AND TEMPERATURE VBIAS PSRR vs FREQUENCY
Figure 11. Figure 12.
VIN PSRR vs FREQUENCY VIN PSRR vs FREQUENCY
Figure 13. Figure 14.
VIN PSRR vs VIN VOUT NOISE SPECTRAL DENSITY
Figure 15. Figure 16.
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 9
2.85
2.65
2.45
2.25
2.05
1.85
1.65
1.45
1.25
00.5 1.0
BiasCurrent(mA)
I (A)
OUT
1.5
+125 C°
+25 C°
- °40 C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
2.0 2.5 3.0 3.5 4.0 4.5
BiasCurrent(mA)
V (V)
BIAS
5.0
+125 C°
+25 C°
- °40 C
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-40 -20 0 20 40 60 80 100
BiasCurrent( A)m
JunctionTemperature( C)°
120
V =2.375V
BIAS
V =5.5V
BIAS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V Low-LevelPGVoltage(V)
OL
02 4 6 8 10 12
PGCurrent(mA)
20mV/div
20mV/div
20mV/div
20mV/div
1V/div
Time(50 s/div)m
4.3V
C =2x470 F(OSCON)
OUT m
C =100 F(Cer.)
OUT m
C =10 F(Cer.)
OUT m
1V/ sm
3.3V
C =0 F
OUT m
4.3V
10mV/div
10mV/div
10mV/div
10mV/div
500mV/div
Time(50 s/div)m
C =2x470 F(OSCON)
OUT m
C =100 F(Cer.)
OUT m
C =10 F(Cer.)
OUT m
C =0 F
OUT m
2.5V
1.5V
V =1.2V
OUT
1V/ sm
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
At TJ= +25°C, VOUT = 1.5V, VIN = VOUT(TYP) + 0.3V, VBIAS = 3.3V, IOUT = 50mA, EN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT =
10mF, unless otherwise noted.
IBIAS vs IOUT AND TEMPERATURE IBIAS vs VBIAS AND VOUT
Figure 17. Figure 18.
IBIAS SHUTDOWN vs TEMPERATURE LOW-LEVEL PG VOLTAGE vs PG CURRENT
Figure 19. Figure 20.
VBIAS LINE TRANSIENT VIN LINE TRANSIENT (1.5A)
Figure 21. Figure 22.
10 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
50mV/div
50mV/div
50mV/div
50mV/div
1A/div
Time(50 s/div)m
50mA
C =2x470 F(OSCON)
OUT m
C =100 F(Cer.)
OUT m
C =10 F(Cer.)
OUT m
1A/ sm
C =0 F
OUT m
1.5A
500mV/div
Time(20ms/div)
VPG
VTRACK
I =500mA
OUT
VOUT
1V/div
Time(20ms/div)
V (500mV/div)
PG
VOUT
V =V
IN BIAS EN
=V
1V/div
1V/div
Time(50 s/div)m
VOUT
0V
1.1V
VEN
V =V
I =1.5A
TRACK IN
OUT
Time(20 s/div)m
VOUT
50mV/div
IOUT
500mA/div
OutputOpen
OutputShorted
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
TYPICAL CHARACTERISTICS (continued)
At TJ= +25°C, VOUT = 1.5V, VIN = VOUT(TYP) + 0.3V, VBIAS = 3.3V, IOUT = 50mA, EN = VIN, CIN = 1mF, CBIAS = 4.7mF, and COUT =
10mF, unless otherwise noted.
OUTPUT LOAD TRANSIENT RESPONSE TRACKING RESPONSE
Figure 23. Figure 24.
POWER-UP/POWER-DOWN TURN-ON RESPONSE–QFN PACKAGE
Figure 25. Figure 26.
OUTPUT SHORT-CIRCUIT RECOVERY
Figure 27.
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 11
R5
R3
R4
VOUT
COUT
Optional
PG
OUT
SNS
IN
BIAS
TRACK
GND
VIN
VBIAS
CIN
CBIAS
VTRACK
VPG
TPS743xx
EN
R1
R5
R3
R4
R2
VOUT
COUT
Optional
PG
OUT
FB
IN
BIAS
TRACK
GND
VIN
VBIAS
CIN
CBIAS
VTRACK
VPG
TPS74301
V =0.8
OUT ´1+ R1
R2
()
EN
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
APPLICATION INFORMATION
The TPS743xx belongs to a family of new generation R1and R2can be calculated for any output voltage
ultra-low dropout regulators that feature soft-start and using the formula shown in Figure 28. Refer to
tracking capabilities. These regulators use a low Table 1 for sample resistor values of common output
current bias input to power all internal control voltages. In order to achieve the maximum accuracy
circuitry, allowing the NMOS pass transistor to specifications, R2should be 4.99k.
regulate very low input and output voltages. FIXED VOLTAGE AND SENSE PIN
The use of an NMOS-pass FET offers several critical
advantages for many applications. Unlike a PMOS Figure 29 illustrates a typical application circuit for the
topology device, the output capacitor has little effect TPS743xx fixed output device.
on loop stability. This architecture allows the
TPS743xx to be stable with any or even no output
capacitor. Transient response is also superior to
PMOS topologies, particularly for low VIN
applications.
The TPS743xx features a TRACK pin that allows the
output to track an external supply. This feature is
useful in minimizing the stress on ESD structures that
are present between the CORE and I/O power pins of
many processors. A power-good (PG) output is also
available to allow supply monitoring and sequencing
of follow-on supplies. To control the output turn-on, Figure 29. Typical Application Circuit for the
an enable (EN) pin with hysteresis and deglitch is TPS743xx (Fixed Voltage)
provided to allow slow-ramping signals to be utilized
for sequencing the device. The low VIN and VOUT
capability allows for inexpensive, easy-to-design, and A fixed voltage version of the TPS743xx has a sense
efficient linear regulation between the multiple supply pin (SNS) so that the device can monitor its output
voltages often present in processor intensive voltage at the load device pin(s) as closely as
systems. possible. Unlike other TI fixed-voltage LDOs,
however, this pin must not be left floating; it must be
ADJUSTABLE VOLTAGE PART AND connected to an output node. See the TI application
SETTING report, Ultimate Regulation of with Fixed Output
Versions of the TPS742xx, TPS743xx, and TPS744xx
Figure 28 is a typical application circuit for the (literature number SBVA024), available for download
TPS74301 adjustable device. from the TI web site.
INPUT, OUTPUT, AND BIAS CAPACITOR
REQUIREMENTS
The device does not require any output capacitor for
stability. If an output capacitor is needed, the device
is designed to be stable for all available types and
values of output capacitance. The device is also
stable with multiple capacitors in parallel, of any type
or value.
The capacitance required on the IN and BIAS pins is
strongly dependent on the input supply source
impedance. To counteract any inductance in the
input, the minimum recommended capacitor for VIN
and VBIAS is 1mF. If VIN and VBIAS are connected to
the same supply, the recommended minimum
capacitor for VBIAS is 4.7mF. Good quality, low ESR
Figure 28. Typical Application Circuit for the capacitors should be used on the input; ceramic X5R
TPS74301 (Adjustable Version) and X7R capacitors are preferred. These capacitors
should be placed as close the pins as possible for
optimum performance.
12 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
Reference
SimplifiedBlock Diagram
VOUT
OUT
BIAS
FB
IN V =5V 5%
BIAS ±
V =1.8V
V =1.5V
I =1.5A
Efficiency=83%
IN
OUT
OUT
Reference
SimplifiedBlock Diagram
BIAS
FB
IN
VIN
V =3.3V 5%
BIAS ±
V =3.3V 5%
V =1.5V
I =1.5A
Efficiency=45%
IN
OUT
OUT
±
VOUT
OUT
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
TRANSIENT RESPONSE
The TPS743xx was designed to have transient
response within 5% for most applications without any
output capacitor. In some cases, the transient
response may be limited by the transient response of
the input supply. This limitation is especially true in
applications where the difference between the input
and output is less than 300mV. In this case, adding
additional input capacitance improves the transient
response much more than just adding additional
output capacitance would do. With a solid input
supply, adding additional output capacitance reduces
undershoot and overshoot during a transient at the
expense of a slightly longer VOUT recovery time. Refer
to Figure 23 in the Typical Characteristics section. Figure 30. Typical Application of the TPS743xx
Since the TPS743xx is stable without an output Using an Auxiliary Bias Rail
capacitor, many applications may allow for little or no
capacitance at the LDO output. For these The second specification (shown in Figure 31),
applications, local bypass capacitance for the device referred to as VBIAS Dropout, is for users who wish to
under power may be sufficient to meet the transient tie IN and BIAS together. This option allows the
requirements of the application. This design reduces device to be used in applications where an auxiliary
the total solution cost by avoiding the need to use bias voltage is unavailable or low dropout is not
expensive high-value capacitors at the LDO output. required. Dropout is limited by BIAS in these
applications because VBIAS provides the gate drive to
DROPOUT VOLTAGE the pass FET, and therefore must be 1.4V above
VOUT. Because of this usage, IN and BIAS tied
The TPS743xx offers industry-leading dropout together easily consume huge power. Pay attention
performance, making it well-suited for high-current not to exceed the power rating of the IC package.
low VIN/low VOUT applications. The extremely low
dropout of the TPS743xx allows the device to be
used instead of a DC/DC converter and still achieve
good efficiencies. This efficiency allows users to
rethink the power architecture for their applications to
find the smallest, simplest, and lowest cost solution.
There are two different specifications for dropout
voltage with the TPS743xx. The first specification (as
shown in Figure 30) is referred to as VIN Dropout and
is for users wishing to apply an external bias voltage
to achieve low dropout. This specification assumes
that VBIAS is at least 1.62V above VOUT, which is the
case for VBIAS when powered by a 3.3V rail with 5%
tolerance and with VOUT = 1.5V. If VBIAS is higher than
3.3V × 0.95 or VOUT is less than 1.5V, VIN dropout is
less than specified.
Figure 31. Typical Application of the TPS743xx
Without an Auxiliary Bias
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 13
IN
BIAS
EN
OUT
PG
SS
TPS74201LDO1(1) DSP
IN
I/O
CORE
BIAS
EN
OUT
PG
TRACK
TPS74301LDO2(1)
R3
32.4kW
R4
10kW
R1
R2
5V 3.3V
1.2V
NOTES:(1)CapacitorsonIN,BIAS,andOUTalongwiththeresistors
necessarytosettheoutputvoltagehavebeenomittedforsimplification.
(2)LowestvalueforV andhighestvalueforR shouldbeused
inthiscalculation.R mustbethecloseststandardvaluebelowthe
calculatedvalueforproperratiometricsequencing.
CORE 2
1
I/O
T mei
C REO
VOUT
SIMU TL A E USSEQUENCINGN O
RATIOMETRICSEQUENCING (2)
C REO
I/O
xR2
V CC IO -0.808
R1=0.808
xR2
V CC CORE -0.8
R1=0.8
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
PROGRAMMABLE SEQUENCING WITH The maximum recommended value for R2is 100k.
TRACK Once R2is selected, R1is calculated using one of the
equations given in Figure 32.
The TPS743xx features a track pin that allows the
output to track an external supply at start-up. While SEQUENCING REQUIREMENTS
the TRACK input is below 0.8V, the error amplifier
regulates the FB pin to the TRACK input. Properly The device can have VIN, VBIAS, VEN, and VTRACK
choosing the resistor divider network (R1and R2) as sequenced in any order without causing damage to
shown in Figure 32 enables the regulator output to the device. However, for the track function to work as
track the external supply to obtain a simultaneous or intended, certain sequencing rules must be applied.
ratiometric start-up. Once the TRACK input reaches VBIAS must be present and the device enabled before
0.8V, the error amplifier regulates the FB pin to the the track signal starts to ramp. VIN should ramp up
0.8V internal reference. Further increases to the faster than the external supply being tracked so that
TRACK input have no effect. the tracking signal will not drive the device into VIN
dropout as VOUT ramps up. The preferred method to
sequence the tracking device is to have VIN, VBIAS,
and VEN above the minimum required voltages before
enabling the master supply to initiate the startup
sequence. This method is illustrated in Figure 32.
Resistors R3and R4disable the master supply until
the input voltage is above 3.52V (typical).
If the TRACK pin is not needed it should be
connected to VIN. Configured in this way, the device
starts up typically within 40ms, which may result in
large inrush current that could cause the input supply
to droop. If soft-start is needed, consider the
TPS742xx or TPS744xx devices.
NOTE: When VBIAS and VEN are present and VIN is
not supplied, this device outputs approximately 50mA
of current from OUT. Although this condition will not
cause any damage to the device, the output current
may charge up the OUT node if total resistance
between OUT and GND (including external feedback
resistors) is greater than 10k.
Figure 32. Various Sequencing Methods Using
the TRACK Pin
14 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
ENABLE/SHUTDOWN current during a short-circuit fault. Recovery from a
short-circuit condition is well-controlled and results in
The enable (EN) pin is active high and is compatible very little output overshoot when the load is removed.
with standard digital signaling levels. VEN below 0.4V See Figure 27 in the Typical Characteristics section
turns the regulator off, while VEN above 1.1V turns the for output short-circuit recovery performance.
regulator on. Unlike many regulators, the enable
circuitry has hysteresis and deglitching for use with The internal current limit protection circuitry of the
relatively slow-ramping analog signals. This TPS743xx is designed to protect against overload
configuration allows the TPS743xx to be enabled by conditions. It is not intended to allow operation above
connecting the output of another supply to the EN the rated current of the device. Continuously running
pin. The enable circuitry typically has 50mV of the TPS743xx above the rated current degrades
hysteresis and a deglitch circuit to help avoid on-off device reliability.
cycling because of small glitches in the VEN signal. THERMAL PROTECTION
The enable threshold is typically 0.8V and varies with
temperature and process variations. Temperature Thermal protection disables the output when the
variation is approximately –1mV/°C; therefore, junction temperature rises to approximately +155°C,
process variation accounts for most of the variation in allowing the device to cool. When the junction
the enable threshold. If precise turn-on timing is temperature cools to approximately +140°C, the
required, a fast rise-time signal should be used to output circuitry is enabled. Depending on power
enable the TPS743xx. dissipation, thermal resistance, and ambient
temperature the thermal protection circuit may cycle
If not used, EN can be connected to either IN or on and off. This cycling limits the dissipation of the
BIAS. If EN is connected to IN, it should be regulator, protecting it from damage as a result of
connected as close as possible to the largest overheating.
capacitance on the input to prevent voltage droops on
that line from triggering the enable circuit. Activation of the thermal protection circuit indicates
excessive power dissipation or inadequate
POWER-GOOD (QFN Package Only) heatsinking. For reliable operation, junction
temperature should be limited to +125°C maximum.
The power-good (PG) pin is an open-drain output and To estimate the margin of safety in a complete design
can be connected to any 5.5V or lower rail through an (including heatsink), increase the ambient
external pull-up resistor. This pin requires at least temperature until thermal protection is triggered; use
1.1V on VBIAS in order to have a valid output. The PG worst-case loads and signal conditions. For good
output is high-impedance when VOUT is greater than reliability, thermal protection should trigger at least
VIT + VHYS. If VOUT drops below VIT or if VBIAS drops +30°C above the maximum expected ambient
below 1.9V, the open-drain output turns on and pulls condition of the application. This condition produces a
the PG output low. The PG pin also asserts when the worst-case junction temperature of +125°C at the
device is disabled. The recommended operating highest expected ambient temperature and
condition of PG pin sink current is up to 1mA, so the worst-case load.
pull-up resistor for PG should be in the range of 10k
to 1M. PG is only provided on the QFN package. If The internal protection circuitry of the TPS743xx is
output voltage monitoring is not needed, the PG pin designed to protect against overload conditions. It is
can be left floating. not intended to replace proper heatsinking.
Continuously running the TPS743xx into thermal
shutdown degrades device reliability.
INTERNAL CURRENT LIMIT
The TPS743xx features a factory-trimmed, accurate
current limit that is flat over temperature and supply
voltage. The current limit allows the device to supply
surges of up to 1.8A and maintain regulation. The
current limit responds in about 10ms to reduce the
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 15
RqJA +()125OC*TA)
PD
PD+ǒVIN *VOUTǓ IOUT
120
100
80
60
40
20
0
qJA ( C/W)
°
0 1 2 3 4 5 678 9 10
BoardCopperArea(in )
2
qJA (KTW)
qJA (RGW)
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
LAYOUT RECOMMENDATIONS AND POWER The maximum junction-to-ambient thermal resistance
DISSIPATION depends on the maximum ambient temperature,
maximum device junction temperature, and power
An optimal layout can greatly improve transient dissipation of the device and can be calculated using
performance, PSRR, and noise. To minimize the Equation 2:
voltage droop on the input of the device during load
transients, the capacitance on IN and BIAS should be
connected as close as possible to the device. This (2)
capacitance also minimizes the effects of parasitic white space
inductance and resistance of the input source and
can therefore improve stability. To achieve optimal Knowing the maximum RqJA, the minimum amount of
transient performance and accuracy, the top side of PCB copper area needed for appropriate heatsinking
R1in Figure 28 should be connected as close as can be estimated using Figure 33.
possible to the load. If BIAS is connected to IN, it is
recommended to connect BIAS as close to the sense
point of the input supply as possible. This connection
minimizes the voltage droop on BIAS during transient
conditions and can improve the turn-on response.
Knowing the device power dissipation and proper
sizing of the thermal plane that is connected to the
tab or pad is critical to avoiding thermal shutdown
and ensuring reliable operation. Power dissipation of
the device depends on input voltage and load
conditions, and can be calculated using Equation 1:
(1)
Power dissipation can be minimized and greater
efficiency can be achieved by using the lowest
possible input voltage necessary to achieve the
required output voltage regulation. Note: qJA value at board size of 9in2(that is, 3in ×
3in) is a JEDEC standard.
On the QFN (RGW) package, the primary conduction Figure 33. qJA vs Board Size
path for heat is through the exposed pad to the
printed circuit board (PCB). The pad can be
connected to ground or be left floating; however, it Figure 33 shows the variation of qJA as a function of
should be attached to an appropriate amount of ground plane copper area in the board. It is intended
copper PCB area to ensure the device will not only as a guideline to demonstrate the effects of heat
overheat. On the DDPAK (KTW) package, the spreading in the ground plane and should not be
primary conduction path for heat is through the tab to used to estimate actual thermal performance in real
the PCB. That tab should be connected to ground. application environments.
NOTE: When the device is mounted on an
application PCB, it is strongly recommended to use
ΨJT and ΨJB, as explained in the Estimating Junction
Temperature section.
16 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
Y Y
JT J T JT D
:T =T + P·
Y Y
JB J B JB D
:T =T + P·
T on PCB
BT on of ICtop
T
1mm
(a) Example RGW (QFN) Package Measurement (b) Example KTW (DDPAK) Package Measurement
1mm
T on of IC
Ttop (1)
T on PCB
surface
B
(2)
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
ESTIMATING JUNCTION TEMPERATURE Where PDis the power dissipation shown by
Equation 1, TTis the temperature at the center-top of
Using the thermal metrics ΨJT and ΨJB, shown in the the IC package, and TBis the PCB temperature
Thermal Information table, the junction temperature measured 1mm away from the IC package on the
can be estimated with corresponding formulas (given PCB surface (as Figure 34 shows).
in Equation 3). For backwards compatibility, an older
qJC,Top parameter is listed as well. NOTE: Both TTand TBcan be measured on actual
application boards using a thermo-gun (an infrared
thermometer).
For more information about measuring TTand TB, see
the application note Using New Thermal Metrics
(3) (SBVA025), available for download at www.ti.com.
(1) TTis measured at the center of both the X- and Y-dimensional axes.
(2) TBis measured below the package lead on the PCB surface.
Figure 34. Measuring Points for TTand TB
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 17
12
10
8
6
4
2
0
Y Yand ( C/W)
JT JB °
0 2 46 8 10
BoardCopperArea(in )
2
YJT (KTW)
YJT (RGW)
YJB (RGW)
YJB (KTW)
TPS743xx
SBVS065K DECEMBER 2005REVISED AUGUST 2010
www.ti.com
Compared with qJA, the thermal metrics ΨJT and ΨJB
are less independent of board size, but they do have
a small dependency. Figure 35 shows characteristic
performance of ΨJT and ΨJB versus board size.
Looking at Figure 35, the RGW package thermal
performance has negligible dependency on board
size. The KTW package, however, does have a
measurable dependency on board size. This
dependency exists because the package shape is not
point-symmetric to an IC center. In the KTW package,
for example (see Figure 34), silicon is not beneath
the measuring point of TTwhich is the center of the X
and Y dimension, so that ΨJT has a dependency.
Also, because of that non-point-symmetry, device
heat distribution on the PCB is not point-symmetric,
either, so that ΨJB has a dependency. Figure 35. ΨJT and ΨJB vs Board Size
space For a more detailed discussion of why TI does not
recommend using qJC,Top to determine thermal
characteristics, refer to the application note Using
New Thermal Metrics (SBVA025), available for
download at www.ti.com. Also, refer to the application
note IC Package Thermal Metrics (SPRA953) (also
available on the TI web site) for further information.
18 Submit Documentation Feedback Copyright © 2005–2010, Texas Instruments Incorporated
TPS743xx
www.ti.com
SBVS065K DECEMBER 2005REVISED AUGUST 2010
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision J (December, 2009) to Revision K Page
Replaced the Dissipation Ratings table with the Thermal Information table ........................................................................ 3
Revised Layout Recommendations and Power Dissipation section ................................................................................... 16
Revised Estimating Junction Temperature section ............................................................................................................. 17
Changes from Revision I (August, 2009) to Revision J Page
Changed last sentence of Layout Recommendations and Power Dissipation section; added Figure 33 .......................... 16
Added Estimating Junction Temperature section ............................................................................................................... 17
Deleted (previously numbered) Figure 33 through Figure 37 ............................................................................................. 18
Copyright © 2005–2010, Texas Instruments Incorporated Submit Documentation Feedback 19
PACKAGE OPTION ADDENDUM
www.ti.com 7-Aug-2010
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TPS74301KTWR ACTIVE DDPAK KTW 7 500 Green (RoHS
& no Sb/Br) CU SN Level-3-245C-168 HR
TPS74301KTWRG3 ACTIVE DDPAK KTW 7 500 Green (RoHS
& no Sb/Br) CU SN Level-3-245C-168 HR
TPS74301KTWT ACTIVE DDPAK KTW 7 50 Green (RoHS
& no Sb/Br) CU SN Level-3-245C-168 HR
TPS74301KTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS
& no Sb/Br) CU SN Level-3-245C-168 HR
TPS74301RGWR ACTIVE VQFN RGW 20 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TPS74301RGWRG4 ACTIVE VQFN RGW 20 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TPS74301RGWT ACTIVE VQFN RGW 20 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TPS74301RGWTG4 ACTIVE VQFN RGW 20 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 7-Aug-2010
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS74301KTWR DDPAK KTW 7 500 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2
TPS74301KTWT DDPAK KTW 7 50 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2
TPS74301RGWR VQFN RGW 20 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
TPS74301RGWT VQFN RGW 20 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS74301KTWR DDPAK KTW 7 500 367.0 367.0 45.0
TPS74301KTWT DDPAK KTW 7 50 367.0 367.0 45.0
TPS74301RGWR VQFN RGW 20 3000 367.0 367.0 35.0
TPS74301RGWT VQFN RGW 20 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
MECHANICAL DATA
MPSF015 – AUGUST 2001
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
KTW (R-PSFM-G7) PLASTIC FLANGE-MOUNT
0.010 (0,25) AM
4201284/A 08/01
0.385 (9,78)
0.410 (10,41)
MM
BC
–A– 0.006
–B–
0.170 (4,32)
0.183 (4,65)
0.000 (0,00)
0.012 (0,305)
0.104 (2,64)
0.096 (2,44)
0.034 (0,86)
0.022 (0,57)
0.050 (1,27)
0.055 (1,40)
0.045 (1,14)
0.014 (0,36)
0.026 (0,66)
0.330 (8,38)
0.370 (9,40)
0.297 (7,54)
0.303 (7,70)
0.0585 (1,485)
0.0625 (1,587)
0.595 (15,1 1)
0.605 (15,37)
0.019 (0,48)
0.017 (0,43)
0°~3°
0.179 (4,55)
0.187 (4,75)
0.056 (1,42)
0.064 (1,63)
0.296 (7,52)
0.304 (7,72)
0.300 (7,62)
0.252 (6,40)
F
C
C
H
H
H
C
A
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Lead width and height dimensions apply to the
plated lead.
D. Leads are not allowed above the Datum B.
E. Stand–off height is measured from lead tip
with reference to Datum B.
F. Lead width dimension does not include dambar
protrusion. Allowable dambar protrusion shall not
cause the lead width to exceed the maximum
dimension by more than 0.003”.
G. Cross–hatch indicates exposed metal surface.
H. Falls within JEDEC MO–169 with the exception
of the dimensions indicated.
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