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FCD7N60 N-Channel SuperFET(R) MOSFET 600 V, 7 A, 600 m Features Description * 650 V @ TJ = 150C SuperFET(R) MOSFET is Fairchild Semiconductor's first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. * Typ. RDS(on) = 530 m * Ultra Low Gate Charge (Typ. Qg = 23 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) * 100% Avalanche Tested * RoHS Compliant Application * LCD / LED TV and Monitor * Lighting * Solar Inverter * AC-DC Power Supply D D G S G D-PAK S MOSFET Maximum Ratings TC = 25 Symbol VDSS o C unless otherwise noted. FCD7N60TM / FCD7N60TM_WS 600 Parameter Drain to Source Voltage ID Drain Current IDM Drain Current VGSS Gate to Source Voltage - Continuous (TC = 25oC) V 7 - Continuous (TC = 100oC) - Pulsed Unit A 4.4 (Note 1) 21 A 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 230 IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL - Derate Above 25oC 83 W 0.67 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol FCD7N60TM / FCD7N60TM_WS Parameter RJC Thermal Resistance, Junction to Case, Max. 1.5 RJA Thermal Resistance, Junction to Ambient, Max. 83 (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 1 Unit o C/W www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET December 2013 Part Number FCD7N60TM Top Mark FCD7N60 Package D-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FCD7N60TM_WS FCD7N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ BVDS Breakdown Voltage Temperature Coefficient Drain to Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 250 A, TC = 25oC 600 - - V VGS = 0 V, ID = 250 A, TC = 150oC - 650 - V ID = 250 A, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 7.0 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = 30 V, VDS = 0 V - - 100 3.0 - 5.0 V - 0.53 0.6 - 6 - S A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A Dynamic Characteristics - 710 920 pF - 380 500 pF - 34 - pF - 22 29 pF VDS = 0 V to 400 V, VGS = 0 V - 60 - pF - 35 80 ns VDD = 300 V, ID = 7.0 A, VGS = 10 V , RG = 25 - 55 120 ns - 75 160 ns - 32 75 ns - 23 30 nC - 4.2 5.5 nC - 11.5 - nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge (Note 4) VDS = 480 V, ID = 7.0 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 21 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 7.0 A - - 1.4 V trr Reverse Recovery Time - 360 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 7.0 A, dIF/dt = 100 A/s - 4.5 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 7 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 2 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 1 10 ID , Drain Current [A] ID, Drain Current [A] 1 10 150 25 0 10 -55 Note 1. VDS = 40V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 2.0 1.8 1.6 1.4 VGS = 10V 1.2 1.0 0.8 0.6 VGS = 20V 0.4 0.2 0.0 1 10 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0 5 10 15 10 20 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 1.2 1.4 1.6 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] VDS = 100V 2000 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 0 -1 10 1.0 12 3000 1000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 25 VDS = 400V 8 6 4 2 Note : ID = 7A 0 0 10 1 10 0 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 VDS = 250V 10 3 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 -50 0 o 2 100 us 1 7.5 ID, Drain Current [A] ID, Drain Current [A] 200 10.0 10 1 ms 10 ms DC 0 10 Notes : -1 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 100 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 50 o TJ, Junction Temperature [ C] o 1. TC = 25 C 5.0 2.5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 TC, Case Temperature [] ZJC(t), Thermal Response [oC/W] Z JC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 0 .2 N o te s : 1 . Z JC(t) = 1 .5 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC(t) 0 .1 10 -1 0 .0 5 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 4 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET Typical Performance Characteristics (Continued) 50K 200nF 12V FCD7N60 -- N-Channel SuperFET(R) MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 5 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 6 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2008 Fairchild Semiconductor Corporation FCD7N60 Rev. C1 8 www.fairchildsemi.com FCD7N60 -- N-Channel SuperFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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