Order this document by MRF226/D MRF226 The RF Line NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Volt large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio. @ Specified 12.5 Volt, 225 MHz Characteristics Output Power = 13 Watts Minimum Gain = 9.0 dB Efficiency = 50% @ Characterized With Series Equivalent Large-Signal Impedance Parameters Designed to Withstand Load Mismatch at all Phase Angles with 20:1 VSWR 13 W 225 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 18 Vde Coltector-Base Voltage VcBo 36 Vde Emitter-Base Voltage VEeBO 4.0 Vde Coilector Current Continuous Ie 2.5 Ade Total Device Dissipation @ Tc = 25C (1) Pp 45 Watts Derate above 25C 257 mw/C Storage Temperature Range Tstq -65 to +200 c Stud Torque (2) - 6.5 In. Lb. (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF amplifiers. (2) For repeated assembly, use 5 In. Lb. FIGURE 1 225 MHz TEST CIRCUIT SCHEMATIC RFC3 c10 C12 ct RF RE Output Input c2 L C3 an lor : L C1,2,8,9 18 pF Chip Cap 50 V = RFC2 0.15 4H Molded Choke C3 15 pF UNELCO L1 0.15 x 3.15 inch Microstrip C4,5 + 80pF UNELCO L2 0.15 x 0.55 inch Microstrip c 25 pF UNELCO L3 0.15 x 1.4 inch Microstrip c7 7.0 pF UNELCO L4 0.15 x 2.35 inch Microstrip C10,12. 680 pF Feedthru ALLEN BRADLEY LS 0.15 x 0.5 inch Microstrip C11 1.0 nF, 35 V Tantalum Board is G10 3x 5 x 0.062 inch RFC 1,3 Ferroxcube VK200 ER =5 NOTE: CASE 1454-01 USE 8-32NC2A STUD CASE 145A-01 MOTOROLA INC., 1974 DS 5568 MRF 226 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) Characteristic { Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector Emitter Breakdown Voltage BVcEO 18 ~ Vde (I = 15 mAde, Ig = 0) Collector-Base Breakdown Voltage BVcBO 36 - Vde- (I = 5.0 mAdc, Ig = 0) Emitter-Base Breakdown Voltage (Ie = 2.5 mAdc, Ic = 0) Collector Cutoff Current (Veg = 15 Vde, Ie = 0) ON CHARACTERISTICS BVEBO 4.0 - Vde icBo - 0.25 mAdc DC Current Gain hee 5.0 - - (1 = 250 mAdc, Veg = 5.0 Vde) FUNCTIONAL TEST (Figure 1) Cormmon-Emitter Amplifier Power Gain (Pout = 13 W, Voc = 12.5 Vde, f = 225 MHz) Collector Efficiency n 50 (Pout = 13 W, Voc = 12.5 Vde, f = 225 MHz) Gpe 9.0 - dB FIGURE 2 OUTPUT POWER versus INPUT POWER FIGURE 3 SERIES EQUIVALENT IMPEDANCE 22.5 20 a 175 xt = ec 15 w = & 12.5 5 f= 225 MHz ~ 10 Voc = 12.5 Vde ] Qa 375 o g 3 8 0.5 1.0 18 2.0 2.5 3.0 3.5 49 Pin, INPUT POWER (WATTS) (AA) MOTOROLA Serniconductor Products [nc. This page intentionally left blank. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or quarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer appfication by customer's technical experts. Motorola doss not convey any license under its patent rights flor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attomey fees arising out of, directly or indirectly, any claim of personal injury or death associated with_such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motoroia, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. a (S) MOTOROLA MRF226/D Sess PRINTED INUSA (1998) MPS/FOP PARTURETE MUG ARG TEE 01