DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD7000 High-speed double diode Product data sheet Supersedes data of 1996 Sep 18 1999 May 11 NXP Semiconductors Product data sheet High-speed double diode PMBD7000 PINNING FEATURES DESCRIPTION * Small plastic SMD package The PMBD7000 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. * High switching speed: max. 4 ns * Continuous reverse voltage: max. 100 V * Repetitive peak reverse voltage: max. 100 V PIN DESCRIPTION 1 anode 2 cathode 3 common connection * Repetitive peak forward current: max. 450 mA. handbook, halfpage 2 1 APPLICATIONS * High-speed switching in e.g. surface mounted circuits. 2 1 3 3 MAM232 Marking code: p5C = made in Hong Kong; t5C = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage - 100 V VR continuous reverse voltage - 100 V IF continuous forward current single diode loaded; see Fig.2; note 1 - 215 mA double diode loaded; see Fig.2; note 1 - 125 mA - 450 mA t = 1 s - 4 A t = 1 ms - 1 A t=1s - 0.5 A - 250 mW IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 Tamb = 25 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 2 NXP Semiconductors Product data sheet High-speed double diode PMBD7000 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA 550 700 mV IF = 10 mA 670 820 mV IF = 50 mA - 1 V IF = 100 mA 0.75 1.1 V IF = 150 mA - 1.25 mV VR = 50 V - 300 nA VR = 100 V - 500 nA VR = 50 V; Tj = 150 C - 100 A see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 - 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 - 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 3 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet High-speed double diode PMBD7000 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 11 4 104 NXP Semiconductors Product data sheet High-speed double diode PMBD7000 MBG378 5 10halfpage handbook, IR (nA) 10 10 10 MBG446 0.8 handbook, halfpage Cd (pF) 4 0.6 (1) 3 (2) (3) 0.4 2 10 0.2 0 100 Tj (oC) 0 200 0 (1) VR = 50 V; maximum values. (2) VR = 30 V; typical values. (3) VR = 50 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1999 May 11 5 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode PMBD7000 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R = 50 i V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I V 90% R S = 50 D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1999 May 11 6 t tp output signal NXP Semiconductors Product data sheet High-speed double diode PMBD7000 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 1999 May 11 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 NXP Semiconductors Product data sheet High-speed double diode PMBD7000 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General Information in this document is believed to be accurate and reliable. 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Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 11 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp9 Date of release: 1999 May 11 Document order number: 9397 750 05925