DATA SH EET
Product data sheet
Supersedes data of 1996 Sep 18
1999 May 11
DISCRETE SEMICONDUCTORS
PMBD7000
High-speed double diode
db
ook, halfpage
M3D088
1999 May 11 2
NXP Semiconductors Product data sheet
High-speed double diode PMBD7000
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 100 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak fo rward current:
max. 450 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The PMBD7000 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN DESCRIPTION
1anode
2cathode
3common connection
Fig.1 Simplified outline (SOT23 ) and symbo l .
Marking code: p5C = made in Hong Kong; t5C = made in Malaysia.
handbook, halfpage
21
3MAM232
12
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak rever se voltage 100 V
VRcontinuou s reverse vol tage 100 V
IFcontinuou s for ward current single diode lo aded; see Fig.2;
note 1 215 mA
double diode loaded; see Fig.2;
note 1 125 mA
IFRM repetitive peak fo rward current 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 μs4 A
t = 1 ms 1 A
t = 1 s 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
1999 May 11 3
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7000
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 550 700 mV
IF = 10 mA 670 820 mV
IF = 50 mA 1 V
IF = 100 mA 0.75 1.1 V
IF = 150 mA 1.25 mV
IRreverse current see Fig.5
VR = 50 V 300 nA
VR = 100 V 500 nA
VR = 50 V; Tj = 150 °C100 μA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
4ns
Vfr forward recove ry voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.8 1.75 V
THERMAL CHARACTE RISTICS
Note
1. Devi ce mounted on an FR4 printed-ci rcuit board.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1999 May 11 4
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7000
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (μs)
1
IFSM
(A)
102
101104
102103
10
1
1999 May 11 5
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7000
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
105
104
10 200
0
MBG378
100
IR
(nA)
103
102
(1)
Tj (oC)
(2) (3)
(1) VR = 50 V; maximum values.
(2) VR = 30 V; typical values.
(3) VR = 50 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
1999 May 11 6
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7000
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩ
IF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1999 May 11 7
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD7000
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
1999 May 11 8
NXP Semiconductors Product data sheet
High-speed double diode PMBD7000
DATA SHEET STATUS
Notes
1. Please co nsult the most recently issued do cument before initiating or completing a design.
2. The product status of device(s) described in this documen t may have changed sinc e this document was pub lished
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
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accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp9 Date of releas e: 1999 May 11 Docum ent order numbe r : 9397 750 05925